星合电子 BAT45 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES DO-35 FEATURES Metal-on-silicon junction Low turn-on voltage 1.083(27.5) MIN Ultrafast switching speed Primarily intended for high level UHF mixers and ultrafast switching applications 0.079(2.0) MAX DIA The diode is also available in the MiniMELF case with type designation LL45. High temperature soldering guaranteed:260℃/10 seconds at terminals 0.150(3.8) MAX MECHANICAL DATA 1.083(27.5) MIN Case: DO-35 glass case 0.020(0.52) MAX DIA Polarity:color band denotes cathode end Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Peak Reverse Voltage Forward Continuous Current Surge non repetitive forward current tp ≤ 1S Junction and Storage temperature range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Symbols Value Units VRRM IF IFSM TSTG TJ TL 15 V mA mA 30 60 -65 to+150 -65 to+125 C 230 C C ELECTRICAL CHARACTERISTICS Symbols Reverse breakover voltage at IR=10mA VR Leakage current at VR=6V IR Forward voltage drop at IF=1mA Test pulse:tp ≤ 300ms d ＜ 2% IF=10mA IF=30mA Junction Capacitance at VR=1V ,f=1MHz Thermal resistance Min. Typ. Max. 15 Unis V 100 nA 0.38 VF 0.50 1 V CJ 1.1 pF RqJA 400 K/W 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 星合电子 BAT45 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES Figure 1. Forward current versus forward voltage at different temperatures(typical values) Figure 2 Capacitance CJ versus reverse applied voltage VR (typical values) IF(mA) 10 CJ(pF) 2 1.5 Tamb= 25 C 10 1 1 10 -1 10 -2 5 Tamb=150 C Tamb= 25 C Tamb= -55 C 0 0.4 1.2 0.8 1.6 2.0 0 VF(V) Figure 3.Reverse current versus ambient temperature 2 4 6 8 VR(V) 10 Figure 4.Reverse current versus continuous revers voltage (typical values) IR(mA) IR(mA) 125 C 10 10 90% confidence VR=5V 100 C 1 75 C 1 max. typ. 10 50 C -1 25 C 10 10 -1 -2 0 25 50 75 100 10 -2 10 -3 0 125 5 10 15 VR(V) Tamb=( C) 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７