CM2500DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD™ HVIGBT Series Module 2500 Amperes/1200 Volts G F A G G J (18 PLACES) H (12 PLACES) G E2 G2 C2 E2 C1 C1 F S L C2E1 V C B D C2E1 AA L L Q E F G1 E1 N K AG AF AF AF AH F FW AB U R K N N M (8 PLACES) AF T C1 P K X Y P L E2 G H F AJ AM AK AL AF AF AD AC (SCREWING DEPTH) Z (SCREWING DEPTH) F AE Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 G2 E2 (Es2) C2 (Cs2) Tr2 E2 E2 C1 C1 C2E1 Di2 Di1 C2E1 Tr1 G1 E1 (Es1) C1 (Cs1) TH1 NTC TH2 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T Inches Millimeters 12.2 310.0 5.6 142.5 4.96 126.0 1.89 48.0 1.85 46.9 0.28 7.0 2.28 58.0 0.21±0.004 Dia. 5.5±0.1 Dia. M6 M6 1.65 42.0 0.91 23.0 M4 M4 0.35 9.0 0.47 11.9 0.21 5.4 0.33 8.5 4.92 125.0 0.6 15.0 Dimensions U V W X Y Z AA AB AC AD AE AF AG AH AJ AK AL AM Inches Millimeters 0.83 21.0 1.5 38.0 2.04 51.9 1.85+0.04/-0.0247.1+1.0/-0.5 1.55 39.4 0.63 16.0 0.24 6.2 0.16 4.0 0.45 11.5 2.01+0.04/-0.0251.0+1.0/-0.5 0.32 8.2 0.55 14.0 2.05 52.0 0.59 15.0 7.01 178.0 3.98 101.0 1.63 41.5 1.54 39.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking £ NTC Thermistor Applications: £ AC Motor Control £ Motion/Servo Control £Photovoltaic/Wind £ UPS Inverter Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM1800DY-34S is a 1700V (VCES), 1800 Ampere Dual Half-Bridge IGBTMOD™ HVIGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM2500 24 5/12 Rev. 1 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module 2500 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics SymbolRatingUnits Collector-Emitter Voltage (VGE = 0V) VCES 1200Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20Volts Collector Current (DC, TC = 83°C)*2,*4IC Collector Current (Pulse, Repetitive)*3I 2500Amperes CRM 5000Amperes Total Maximum Power Dissipation (TC = 25°C)*2,*4Ptot 11535Watts Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)*2 Emitter Current, Free Wheeling Diode Forward Current (Pulse, repetitive)*3 IE*1 2500Amperes IERM*1 5000Amperes Module Characteristics SymbolRatingUnits Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO4000 V Maximum Junction Temperature Tj(max)175 °C Maximum Case Temperature*4TC(max)125 °C Tr2 Di2 Di1 Tr1 Tr2 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 101.2 96.2 87.7 82.7 Di1 54.2 Tr1 40.7 Di1 Tr2 Di1 Di2 0 °C 24.0 -40 to +125 198.0 226.2 256.0 284.2 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 52.2 Tstg Storage Temperature 82.0 °C 110.2 -40 to +150 140.0 Tj(opr) 168.2 Operating Junction Temperature Tr1 Di2 59.2 45.7 24.5 Th 0 25.7 54.0 46.5 83.7 112.0 141.7 170.0 199.7 228.0 257.7 286.0 0 LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2: IGBT 2 Di1 / Di2: FWDi Th: NTC Thermistor 5/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module 2500 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 5.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 45mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 2500A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts (Terminal) IC = 2500A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts 150°C*5 — 2.05 — Volts IC = 2500A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts 125°C*5 — 1.90 — Volts IC = 2500A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts — — 250 nF — — 50 nF Collector-Emitter Cutoff Current IC = 2500A, VGE = 15V, Tj = Collector-Emitter Saturation Voltage VCE(sat) (Chip) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage IC = 2500A, VGE = 15V, Tj = VCE = 10V, VGE = 0V — — 4.2 nF VCC = 600V, IC = 2500A, VGE = 15V — 5800 — nC — — 800 ns tr VCC = 600V, IC = 2500A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 700 ns — — 300 ns 25°C*5 — 1.80 2.25 Volts IE = 2500A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts td(on) tf *1 VEC (Terminal) IE = 2500A, VGE = 0V, Tj = IE = 2500A, VGE = 0V, Tj = Emitter-Collector Voltage 150°C*5 — 1.80 — Volts VEC*1 IE = 2500A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 2500A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts — 1.70 — Volts IE = 2500A, VGE = 0V, Tj = 150°C*5 Reverse Recovery Time trr VCC = 600V, IE = 2500A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load — 70 — µC Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 2500A, — (TBD) — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, — (TBD) — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — (TBD) — mJ RCC' + EE' Main Terminals-Chip, — 0.11 — mΩ — 1.1 — Ω Internal Lead Resistance *1 Per Switch,TC = 25°C*4 Internal Gate Resistance rg Per Switch *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) are measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 5/12 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module 2500 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant B(25/50) Test Conditions TC = 25°C*4 TC = 100°C, R100 = 493Ω*4 Typ. Max. Units 4.85 5.00 5.15 kΩ -7.3 — +7.8 % — 3375 — K P25 TC = 25°C*4 — — 10 mW Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per IGBT — — 13 K/kW Case*4 Rth(j-c)D Per FWDi — — 22 K/kW — 3.1 — K/kW Main Terminals, M6 Screw 31 35 40 in-lb Auxiliary Terminals, M4 Screw 12 13 15 in-lb Power Dissipation Approximate by Equation*6 Min. Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Rth(c-f) Thermal Grease Applied Heatsink*4 (Per 1/2 Module)*7 Mechanical Characteristics Mounting Torque Mt Ms Mounting, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 16 — — mm Terminal to Baseplate 25 — — mm Clearance da Terminal to Terminal 16 — — mm Terminal to Baseplate 24 — — mm Weight m — 2000 — Grams Flatness of Baseplate ec On Centerline X, Y*8 -50 — +100 µm VCC Applied Across P-N Terminals — 600 850 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across G-E Terminals 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 2 Ω Tr2 Di2 Di1 Tr1 Tr2 MOUNTING SIDE 4 Tr1 Tr2 Tr1 Tr2 Di2 Di1 Tr1 Tr2 Di1 Di2 Tr1 Tr2 Di2 Di1 Tr1 Tr2 Di1 Di2 Tr1 Tr2 Di2 0 Tr1 101.2 96.2 87.7 82.7 Di1 54.2 Tr1 40.7 Di1 Tr2 Di1 Di2 24.0 52.2 82.0 110.2 140.0 168.2 198.0 Di1 Tr1 Di2 59.2 45.7 24.5 Th Y ec 0 - CONCAVE Each mark points to the center position of each chip. + CONVEX Tr1 / Tr2: IGBT Di1 / Di2: FWDi 0 25.7 54.0 46.5 83.7 112.0 141.7 170.0 199.7 228.0 257.7 X MOUNTING SIDE MOUNTING SIDE Tr2 Di2 Di1 Di2 286.0 - CONCAVE + CONVEX RECOMMENDED AREA FOR EVEN APPLICATION OF THERMALLY CONDUCTIVE GREASE (PER BASEPLATE) 226.2 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 256.0 DC Supply Voltage 284.2 Recommended Operating Conditons, Ta = 25°C LABEL SIDE Th: NTC Thermistor 5/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module 2500 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5000 15 3000 11 2000 10 1000 9 Tj = 25°C 0 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 1000 0 2000 3000 4000 8 IC = 5000A 6 IC = 2500A 4 IC = 1000A 2 0 5000 Tj = 25°C 6 8 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 CAPACITANCE, Cies, Coes, Cres, (nF) 103 102 Cies td(on) 102 Coes 101 Cres 100 0 0.5 1.0 1.5 2.0 2.5 10-1 10-1 3.0 100 101 tf 102 tr VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 101 102 102 103 104 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 td(off) td(on) VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 103 COLLECTOR CURRENT, IC, (AMPERES) 104 td(on) SWITCHING TIME, (ns) tr 102 5/12 Rev. 1 td(off) td(off) tf 101 102 103 tr 102 100 tf VCC = 600V VGE = ±15V IC = 2500A Tj = 125°C Inductive Load 101 EXTERNAL GATE RESISTANCE, RG, (Ω) 102 td(on) SWITCHING TIME, (ns) 103 20 td(off) VGE = 0V SWITCHING TIME, (ns) 18 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25°C Tj = 125°C Tj = 150°C 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 EMITTER CURRENT, IE, (AMPERES) 3.0 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 4000 12 13.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3.5 VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) tr tf 102 100 VCC = 600V VGE = ±15V IC = 2500A Tj = 150°C Inductive Load 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module 2500 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 101 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr 103 103 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 101 102 104 2000 0 4000 6000 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 104 102 101 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Eon Eoff Err 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) VCC = 600V VGE = ±15V IC = 2500A Tj = 150°C GATE RESISTANCE, RG, (Ω) 101 VCC = 600V VGE = ±15V IC = 2500A Tj = 125°C 101 10-1 Eon Eoff Err 100 101 GATE RESISTANCE, RG, (Ω) 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.16°C/W (IGBT) Rth(j-c) = 0.17°C/W (FWDi) 10-2 Eon Eoff Err 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-1 100 104 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 103 8000 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Eon Eoff Err HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 5 0 104 103 101 10-1 10 GATE CHARGE, QG, (nC) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 15 EMITTER CURRENT, IE, (AMPERES) 101 102 6 103 IC = 2500A VCC = 600V EMITTER CURRENT, IE, (AMPERES) 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 102 GATE CHARGE VS. VGE 104 REVERSE RECOVERY, Irr (A), trr (ns) REVERSE RECOVERY, Irr (A), trr (ns) 104 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 5/12 Rev. 1