CM300DX-12A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ NX-Series Module 300 Amperes/600 Volts A D E J F J G Y (4 PLACES) AD AE AF H 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M L 2 3 4 5 6 7 8 N K AG 9 10 11 12 13 14 15 16 17 18 19 20 21 22 P K L DETAIL "A" AL AM AK AT AU E1C2(24) E1C2(23) Tr2 Di2 Di1 C1(22) E1(16) Tr1 DETAIL "B" AN G1(15) G2(38) E2(39) AX C AR AS AP AV AW AJ AH AC (4 PLACES) AQ DETAIL "A" E2 (47) C1 (48) Th NTC TH1 (1) *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 TH2 (2) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y Rev. 3/09 Inches Millimeters Dimensions 5.98 2.44 0.67 5.39 4.79 4.33±0.02 3.89 3.72 0.53 0.15 0.28 0.30 1.95 0.9 0.55 0.87 0.67 0.48 0.24 0.16 0.37 0.83 M6 152.0 62.0 17.0 137.0 121.7 110.0±0.5 99.0 94.5 13.5 3.8 7.25 7.75 49.54 22.86 14.0 22.0 17.0 12.0 6.0 4.2 6.5 21.14 M6 Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX Inches Millimeters 1.53 39.0 1.97±0.02 50.0±0.5 2.26 57.5 0.22 Dia. 5.5 Dia. 0.67+0.04/-0.0217.0+1.0/-0.5 0.51 13.0 0.27 7.0 0.03 0.8 0.81 20.5 0.12 3.0 0.14 3.5 0.21 5.4 0.49 12.5 0.15 3.81 0.05 1.15 0.025 0.65 0.29 7.4 0.24 6.2 0.17 Dia. 4.3 Dia. 0.10 Dia. 2.5 Dia. 0.08 Dia. 2.1 Dia. 0.06 1.5 0.49 12.5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM300DX-12A is a 600V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-12A Dual IGBTMOD™ NX-Series Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Power Device Junction Temperature CM300DX-12A Units Tj -40 to 150 °C Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M6 Main Terminal Screws — 40 in-lb Module Weight (Typical) — 330 Grams Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm VISO 2500 Volts Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) Storage Temperature Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Inverter Sector VGES ±20 Volts Collector Current (TC = 56°C)*1 IC 300 Amperes Peak Collector Current (Pulse)*3 ICM 600 Amperes Emitter Current (TC = 25°C)*1*4 IE*2 300 Amperes IEM*2 600 Amperes PC 960 Watts Peak Emitter Current (Pulse)*3 Maximum Collector Dissipation (TC = 25°C)*1*4 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Junction temperature (Tj) should not increase beyond Tj(max) rating. CHIP LOCATION (TOP VIEW) Chip Location (Top View) IGBT Y FWDi NTC Thermistor 42.3 0 X 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 – : CONCAVE 18.6 47 24 18.6 Th 28.2 29.8 + : CONVEX HEATSINK SIDE 48 23 3 4 5 6 31.2 2 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 39.8 0 1 40.9 76.9 + : CONVEX HEATSINK SIDE – : CONCAVE BASEPLATE FLATNESS MEASUREMENT POINT 0 *1 *2 *3 *4 Dimensions in mm (Tolerance: ±1mm) 2 Rev. 3/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-12A Dual IGBTMOD™ NX-Series Module 300 Amperes/600 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 30mA, VCE = 10V 5 6 7 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C*5 — 1.7 2.1 Volts IC = 300A, VGE = 15V, Tj = 125°C*5 — 1.9 — Volts IC = 300A, VGE = 15V, Chip — 1.6 — Volts — — 34.0 nF — — 4.0 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCE = 10V, VGE = 0V — — 1.2 nF VCC = 300V, IC = 300A, VGE = 15V — 800 — nC — — 200 ns VCC = 300V, IC = 300A, — — 150 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = ±15V, — — 350 ns Time Turn-off Fall Time tf RG = 5.1Ω, IE = 300A, — — 600 ns Reverse Recovery Time trr*2 Inductive Load Switching Operation — — 200 ns Reverse Recovery Charge Qrr*2 — 9 — µC Emitter-Collector Voltage VEC*2 IE = 300A, VGE = 0V, Tj = 25°C*5 — 2.0 2.8 Volts IE = 300A, VGE = 0V, Tj = 125°C*5 — 1.95 — Volts IE = 300A, VGE = 0V, Chip — 1.9 — Volts Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Module Lead Resistance Symbol Test Conditions Rlead Main Termnals-Chip (Per Switch) — 1.1 — mΩ Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT*1 — — 0.13 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi*1 — — 0.22 °C/W Rth(c-f) Case to Heatsink (Per 1 Module) — 0.015 — °C/W — 0 — Ω 2.0 — 21 Ω Contact Thermal Resistance** Thermal Grease Internal Gate Resistance RGint External Gate Resistance RG Applied*1*7 TC = 25°C NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R TC = 25°C*1 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R –7.3 — +7.8 % — 3375 — K — — 10 mW B Constant Power Dissipation B(25/50) P25 TC = 100°C, R100 = 493Ω*1 B = (InR1 – InR2) / (1/T1 – 1/T2)*6 TC = 25°C*1 **Thermal resistance values are per 1 element. *1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. *2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. *6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(°C) + 273.15 *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. Rev. 3/09 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-12A Dual IGBTMOD™ NX-Series Module 300 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 15 500 3.5 Tj = 25°C VGE = 20V 12 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 400 11 300 200 10 100 0 8 9 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 100 0 200 300 400 500 Tj = 25°C 8 IC = 600A 6 IC = 300A 4 IC = 120A 2 0 600 6 8 10 12 14 16 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C Tj = 125°C 102 104 VGE = 0V 101 Coes 100 Cres 0 1 2 3 10-1 10-1 4 103 td(off) tf td(on) 102 102 Inductive Load 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) tf td(off) 102 tr td(on) 101 100 VCC = 300V VGE = ±15V IC = 300A Tj = 125°C Inductive Load 101 GATE RESISTANCE, RG, (Ω) 102 20 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Inductive Load GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME, (ns) 101 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 4 100 102 101 101 Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 20 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 125°C Cies tr 101 18 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 3.0 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) IC = 300A 16 VCC = 200V VCC = 300V 12 8 4 0 0 200 400 600 800 1000 1200 GATE CHARGE, QG, (nC) Rev. 3/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DX-12A Dual IGBTMOD™ NX-Series Module 300 Amperes/600 Volts VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 125°C Inductive Load Eon Eoff 100 10-1 101 102 103 101 VCC = 300V VGE = ±15V IC = 300A Tj = 125°C Inductive Load Eon Eoff 100 10-1 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V IE = 300A Tj = 125°C Inductive Load 10-1 100 100 10-1 Err 101 GATE RESISTANCE, RG, (Ω) Rev. 3/09 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 100 102 10-2 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-1 100 101 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 125°C Inductive Load Err 100 10-1 101 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 102 102 102 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W (IGBT) Rth(j-c) = 0.22°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 5