DC35GN-15-Q4

DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
GENERAL DESCRIPTION
PACKAGE OUTLINE
QFN 4X4 mm
The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC
HEMT transistor capable of broadband pulsed and CW RF power
applications. This transistor utilizes gold metallization, air-cavity Cu-base
QFN package with high-thermal conductivity to provide superior electrical
and thermal performance with excellent reliability & ruggedness.
FEATURES:

Wide-band DC-3.5 GHz general purpose driver applications

Ideal for Pulsed Radar, Avionics, ISM, and CW Communication

15 W Pulsed and CW Psat and 18 dB Power Gain @ 1.4 GHz

Low-cost QFN package with excellent RF & Thermal performance

50V Bias Operation with high breakdown voltage
ABSOLUTE MAXIMUM RATINGS
Maximum CW Power Dissipation
Device Dissipation @ 25C
15 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
125 V
Gate-Source Voltage (VGS)
-8 to +0 V
Supply Current ( IDD )
700 mA
Maximum Temperatures
Storage Temperature (TSTG)
-55 to +125 C
Operating Junction Temperature +200 C
TYPICAL PERFORMANCE SUMMARY 1 @ 25C
Parameter
Units
0.960 GHz
1.2 GHz
1.4 GHz
2.7 GHz
2.9 GHz
3.1 GHz
3.5 GHz
Output Power Psat
W
20
21
19
20
20
20
16
Power Gain
dB
18.5
18.3
18
13
13
13
12
D Drain Efficiency
%
65
72
66
60
63
60
60
1
Bias Condition: Vdd=+50V, Idq= 40 mA (Vgs= -2.0 ~ -4.5V typical), PW= 1 mS, DC = 10%
RF performance measured on the recommended evaluation board.
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
DC FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
Drain leakage current
VGS = -8V, VDD = 50V
1
mA
IG(Off)
Gate leakage current
VGS = -8V, VDD = 0V
0.2
mA
BVDSS
Drain-Source breakdown voltage
VGS =-8V, IDD = 2mA
125
VGS(TH)
Gate Threshold Voltage
VDS =50V, IDD = 2mA
-4.8
-3.4
-2.5
V
Min
Typ
Max
Units
15
19
W
18
dB
66
%
0.1
dB
V
1
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions
1
Pout
Output Power
Pin=0.32W Freq=1400 MHz
Gp
Power Gain
Pin=0.32W Freq=1400 MHz
D
Drain Efficiency
Pin=0.32W Freq=1400 MHz
Dr
Droop
Pin=0.32W Freq=1400 MHz
VSWR-T
Load Mismatch Tolerance
Pin=0.32W Freq=1400 MHz
Өjc
Thermal Resistance
including PCB, Tbase = 85 °C
Pulse Width=1 mS Duty=10%
3.5
CW
8.4
55
5:1
1
Bias Condition: Vdd=+50V, Idq= 40 mA (Vgs= -2.0 ~ -4.5V typical), PW=1 mS, DC = 10%
RF performance measured on the recommended evaluation board.
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
°C/W
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
TYPICAL CW PERFORMANCE DATA 300 – 500 MHz Band
PERFORMANCE PLOTS
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
1
TYPICAL BROAD BAND PULSED PERFORMANCE DATA 0.96 – 1.215 GHz Band
Frequency
Pin
(W)
Pout
(W)
Id
(A)
RL
(dB)
ηD
(%)
Gain
(dB)
Droop
(dB)
960 MHz
0.32
22
.680
-12
67
18.6
0.25
1100 MHz
0.32
22
.630
-10.5
72
18.6
0.12
1215 MHz
0.32
21
.600
-14.7
71
18.3
0.10
PERFORMANCE PLOTS
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
1
TYPICAL BROAD BAND PULSED PERFORMACE DATA 1.2 – 1.4 GHz Band
Frequency
Pin
(W)
Pout
(W)
Id
(A)
RL
(dB)
ηD
(%)
Gain
(dB)
Droop
(dB)
1200 MHz
0.32
21.4
.590
-10
72.5
18.3
0.1
1300 MHz
0.32
20.4
.580
-17
70.3
18.1
0.1
1400 MHz
0.32
19.3
.580
-12
66.5
17.9
0.12
PERFORMANCE PLOTS
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
1
TYPICAL BROAD BAND PULSED PERFORMACE DATA 2.7 – 3.1 GHz Band
PERFORMANCE PLOTS
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
1
TYPICAL BROAD BAND PULSED PERFORMACE DATA 3.1 – 3.5 GHz Band
Frequency
Pin
(W)
Pout
(W)
Id
(A)
RL
(dB)
ηD
(%)
Gain
(dB)
Droop
(dB)
3100 MHz
1.0
20.0
.670
-6
60
13
0.2
3300 MHz
1.0
18.0
.580
-7.6
62
12.6
0.12
3500 MHz
1.0
16.0
.540
-8.4
60
12
0.11
PERFORMANCE PLOTS
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
THERMAL IR SCAN DATA ( Freq = 1.2 GHz)
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
THERMAL IR SCAN DATA ( Freq = 1.2 GHz)
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
EVALUATION BOARD LAYOUT Q4 EB2
ASSEMBLY DIAGRAM AND BOM FOR 300-500 MHz
Board Material: Rogers RO4003C, 12 Mil Thickness, Er = 3.38, 1 OZ Cu
8 Mil Dia Vias below package, Qty: 39, Solid Cu Filled. Board Size: 1.5 x 1.3 inches
Item
C11,C12
C1
C9
C4,C5,C13
C6,C14
C8,C15
R1
R8
R5
R2
R3
R6
R7
L1
L2
L3
L4
L5
J3
Q1
Description 300 - 500 MHz
0603, 39 pF, ±5%, 250V, ATC 600S
0603, 10 pF, ±5%, 250V, ATC 600S
0603, 1.8 pF, ±0.25pF, 250V, ATC 600S
0603, 470 pF, ±5%, 100V, AVX, X7R
0603, 10000 pF, ±10%, 100V, AVX, X7R
1206, 4.7 uF, ±10%, 100V, AVX, X7S
0603 300 Ω
0603 360 Ω
0603 5.1 Ω
0402 5.1 Ω
0402 68 Ω
0603 20 Ω
0402 0 Ω JUMPER
0603HP, 15 nH , 5% Coilcraft
0603HP, 56 nH , 5% Coilcraft
1008AF, 0.9 uH , 5% Coilcraft
0603HP, 7.5 nH , 5% Coilcraft
0603HP, 4.7 nH , 5% Coilcraft
TSM-105-01-S-SV-A, SAMTEC
DC35GN-15-Q4 QFN 4X4, 24L
Note: RF Input is DC short but Gate Input is DC Blocked
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
EVALUATION BOARD LAYOUT Q4 EB2
ASSEMBLY DIAGRAM AND BOM FOR 960-1215 MHz and 1200-1400 MHz
Board Material: Rogers RO4003C, 12 Mil Thickness, Er = 3.38, 1 OZ Cu
8 Mil Dia Vias below package, Qty: 39, Solid Cu Filled. Board Size: 1.5 x 1.3 inches
Item
Description 0.96 - 1.215 GHz
Description 1.2 - 1.4 GHz
C1,C11,C12
C2
C3
C9
C4,C5,C13
C6,C14
C8,C15
R1
R5
R3
R6
L1
L2
L3
L4
L5
L6
J3
Q1
0603, 39 pF, ±5%, 250V, ATC 600S
0603, 2.4 pF, 250V, ATC 600S
N/A
0603, 1.8 pF, ±0.25pF, 250V, ATC 600S
0603, 470 pF, ±5%, 100V, AVX, X7R
0603, 10000 pF, ±10%, 100V, AVX, X7R
1206, 4.7 uF, ±10%, 100V, AVX, X7S
0603 0 Ω JUMPER
0603 5.1 Ω
0402 12 Ω
0603 20 Ω
0402HP, 2.2 nH , 5% Coilcraft
0402PA, 1.9 nH , 5% Coilcraft
0603HP, 39 nH , 5% Coilcraft
0603HP, 7.5 nH , 5% Coilcraft
0603HP, 4.7 nH , 5% Coilcraft
0402HP 1nH, 5% Coilcraft
TSM-105-01-S-SV-A, SAMTEC
DC35GN-15-Q4 QFN 4X4, 24L
0603, 39 pF, ±5%, 250V, ATC 600S
N/A
0603, 3.9 pF, 250V, ATC 600S
0603, 1.8 pF, ±0.25pF, 250V, ATC 600S
0603, 470 pF, ±5%, 100V, AVX, X7R
0603, 10000 pF, ±10%, 100V, AVX, X7R
1206, 4.7 uF, ±10%, 100V, AVX, X7S
0603 6.2 Ω
0603 5.1 Ω
0402 12 Ω
0603 20 Ω
0402HP, 2.2 nH , 5% Coilcraft
0402PA, 1.9 nH , 5% Coilcraft
0603HP, 27 nH , 5% Coilcraft
0603HP, 7.5 nH , 5% Coilcraft
0603HP, 4.7 nH , 5% Coilcraft
0402 0 Ω JUMPER
TSM-105-01-S-SV-A, SAMTEC
DC35GN-15-Q4 QFN 4X4, 24L
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
EVALUATION BOARD LAYOUT Q4 EB2
ASSEMBLY DIAGRAM AND BOM FOR 2700-3100 MHz & 3100-3500 MHz
Board Material: Rogers RO4003C, 12 Mil Thickness, Er = 3.38, 1 OZ Cu
8 Mil Dia Vias below package, Qty: 39, Solid Cu Filled. Board Size: 1.5 x 1.3 inches
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
QFN 4X4 mm PACKAGE OUTLINE & DIMENSIONS
All Dimensions are in mm (typ).
PIN
FUNCTION
1,6,13,18
RF GND (Source)
2,3,4,5
RF IN (Gate)
7,8,9,10,11,12
N/C
14,15,16,17
RF OUT (Drain)
19,20,21,22,23,24
Backside
Exposed Pad
N/C
RF GND (Source) & Thermal Pad
Notes:
1. Backside exposed pad must be connected to Solid Cu filled vias for optimum RF & Thermal
performance. See recommended evaluation board layout
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
DC35GN-15-Q4
15 Watts • 50 Volts • Pulsed & CW
GaN on SiC Wideband Transistor
QFN 4x4 mm
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied,
published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of
Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such
Agreement will also apply . This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted
to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of
Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical
equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty,
relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose,
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Revision History
Revision
Date
Affected Section(s)
Description
2.0
09-16-14
-
Initial Preliminary Release
3.0
12-04-14
-
Added more Preliminary Data
4.0
2-17-15
-
Added more Data, Updated PCB layout and BOM
5.0
5-1-15
-
Added 3.1-3.5 GHz Data, PCB Layout and BOM
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
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