SHENZHENFREESCALE AOT290L

AOT290L/AOB290L
100V N-Channel MOSFET
General Description
The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power losses are minimized due to an extremely low combination
of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED
backlighting.
Features
VDS
ID (at VGS=10V)
100V
140A
RDS(ON) (at VGS=10V)
< 3.5mΩ
(< 3.2mΩ ∗)
TO220
TO-263
2
PAK
D
D
D
S
D
G
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
1/6
IAS, IAR
100
A
EAS, EAR
500
mJ
500
Steady-State
Steady-State
W
250
2.1
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
15
PDSM
Junction and Storage Temperature Range
A
18
PD
TA=25°C
V
500
IDSM
TA=70°C
±20
110
IDM
TA=25°C
Continuous Drain
Current
Avalanche Current
C
Units
V
140
ID
TC=100°C
Maximum
100
-55 to 175
Typ
12
50
0.25
°C
Max
15
60
0.3
Units
°C/W
°C/W
°C/W
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AOT290L/AOB290L
100V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.9
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
TJ=55°C
5
VDS=0V, VGS= ±20V
VGS=10V, ID=20A
TO220
TJ=125°C
nA
3.5
4.1
V
2.7
3.5
4.4
5.7
3.2
A
Static Drain-Source On-Resistance
Forward Transconductance
TO263
VDS=5V, ID=20A
2.5
gFS
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.67
IS
Maximum Body-Diode Continuous CurrentG
Output Capacitance
VGS=10V, ID=20A
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
50
mΩ
S
1
V
140
A
7180
9550
pF
2780
3700
pF
42
72
pF
VGS=0V, VDS=0V, f=1MHz
1.7
VGS=10V, VDS=50V, ID=20A
33
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
µA
100
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Units
V
VDS=100V, VGS=0V
IDSS
Coss
Max
90
Ω
126
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
21
tD(on)
Turn-On DelayTime
31
69
ns
tr
Turn-On Rise Time
24
53
ns
tD(off)
Turn-Off DelayTime
45
99
ns
tf
Turn-Off Fall Time
27
60
ns
ns
nC
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
nC
nC
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
65
91
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
460
644
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the P CB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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AOT290L/AOB290L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
8V
6.5V
80
VDS=5V
80
6V
60
ID(A)
ID (A)
60
5.5V
40
125°C
40
25°C
20
20
Vgs=5V
0
0
0
1
2
3
4
3
5
8
6
7
Normalized On-Resistance
2
6
4
2
VGS=10V
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
1.0E+02
ID=20A
1.0E+01
8
40
6
125°C
4
IS (A)
1.0E+00
RDS(ON) (mΩ )
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
RDS(ON) (mΩ )
4
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
5
3/6
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOT290L/AOB290L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
10
VDS=50V
ID=20A
6
4
2
6000
4000
Coss
2000
0
Crss
0
0
20
40
60
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0
10µs
10µs
100µs
RDS(ON)
limited
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
10.0
4000
1ms
DC
Power (W)
100.0
20
100
5000
1000.0
ID (Amps)
Ciss
8000
Capacitance (pF)
VGS (Volts)
8
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
17
5
2
10
3000
2000
1000
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.3°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOT290L/AOB290L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
500
400
300
200
100
TA=125°C
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
150
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
TA=25°C
120
1000
Power (W)
Current rating ID(A)
175
90
60
100
10
30
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.001
175
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
40
RθJA=60°C/W
0.1
0.01
PD
0.001
Ton
Single Pulse
T
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOT290L/AOB290L
100V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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