TK4P55D Silicon N Channel MOS Type (π-MOSⅦ) Switching Regulator Applications 1.08±0.2 Low drain-source ON-resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 0.58MAX 6.1 ± 0.12 +0.4 −0.6 6.6 ± 0.2 5.34 ± 0.13 10.0 1.01MAX • • • • Unit: mm Absolute Maximum Ratings (Ta = 25°C) 1.14MAX Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 V (Note 1) ID 4 Pulse (t = 1 ms) (Note 1) IDP 16 Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy (Note 2) EAS 139 mJ Avalanche current IAR 4 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current 2.29 2 1 +0.25 −0.12 Unit 1.52 Rating 2.3 ± 0.1 Symbol 0.07 ± 0.07 Characteristics 0.76 ± 0.12 3 1. 2. GATE DRAIN （HEAT SINK） 3. SOURCE A JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7K1A Weight : 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 4 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1/5 3 www.freescale.net.cn Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 µA Drain cut-off current IDSS VDS = 550 V, VGS = 0 V ⎯ ⎯ 10 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 550 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.4 ⎯ 4.4 V Gate threshold voltage Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 2 A ⎯ 1.5 1.88 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 2 A 0.5 2.0 ⎯ S Input capacitance Ciss ⎯ 490 ⎯ Reverse transfer capacitance Crss ⎯ 3 ⎯ Output capacitance Coss ⎯ 55 ⎯ ⎯ 18 ⎯ ⎯ 40 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz 10 V VGS 0V tr Turn-on time ID = 2 A ton Switching time RL = 100 Ω 50 Ω Fall time VOUT tf Turn-off time Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ns ⎯ 8 ⎯ ⎯ 55 ⎯ ⎯ 11 ⎯ ⎯ 6 ⎯ ⎯ 5 ⎯ VDD ≈ 200 V VDD ≈ 400 V, VGS = 10 V, ID = 4 A pF nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 4 A (Note 1) IDRP ⎯ ⎯ ⎯ 16 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 4 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 4 A, VGS = 0 V, ⎯ 900 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/µs ⎯ 5 ⎯ µC Marking (note 4) TK4P55D Part No. (or abbreviation code) Lot No.* Note 4: * Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last 2digits of the calendar year) 2/5 www.freescale.net.cn ID – VDS ID – VDS 8 10 COMMON SOURCE Tc = 25°C PULSE TEST (A) 6.8 6.5 2 6.3 6 1 VGS = 5.6 V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS 7.5 6 7 4 6.5 2 VGS = 6 V 0 0 10 (V) 10 20 ID – VGS VDS (V) DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID 6 4 25 2 100 4 Tc = −55 °C 6 8 GATE-SOURCE VOLTAGE VGS 10 20 16 12 8 ID = 4 A 4 2 1 0 0 4 DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) Tc = −55 °C 25 100 10 1 DRAIN CURRENT ID 3/5 12 16 VGS 20 (V) RDS (ON) – ID COMMON SOURCE VDS = 10 V PULSE TEST 0.1 0.1 8 GATE-SOURCE VOLTAGE (V) 10 1 (V) COMMON SOURCE Tc = 25℃ PULSE TEST ⎪Yfs⎪ – ID 10 VDS 50 VDS – VGS COMMON SOURCE VDS = 10 V PULSE TEST 2 40 30 DRAIN-SOURCE VOLTAGE 8 0 0 COMMON SOURCE Tc = 25°C PULSE TEST 7.8 7 3 8 10 8 DRAIN CURRENT ID DRAIN CURRENT ID (A) 4 (A) COMMON SOURCE Tc = 25°C PULSE TEST VGS = 10 V 1 0.1 0.1 1 10 DRAIN CURRENT ID (A) www.freescale.net.cn RDS (ON) – Tc IDR – VDS 100 4 3 2 ID = 1 A 2 1 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 10 1 5 −40 0 40 80 CASE TEMPERATURE 120 Tc 0.1 0 160 (°C) -0.3 C – VDS GATE THRESHOLD VOLTAGE Vth (V) 100 Coss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C Crss 1 10 3 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 −80 100 VDS 4 (V) −40 VDS (V) DRAIN-SOURCE VOLTAGE 80 60 40 20 80 CASE TEMPERATURE 40 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 100 40 0 CASE TEMPERATURE 120 Tc 160 (°C) 500 20 VDS 400 200 16 VDD = 100 V 400 300 12 200 8 COMMON SOURCE ID = 4 A Tc = 25°C PULSE TEST VGS 100 0 0 4 8 16 12 TOTAL GATE CHARGE Qg 4 0 20 (V) (pF) CAPACITANCE C Ciss PD – Tc DRAIN POWER DISSIPATION PD (W) (V) Vth – Tc DRAIN-SOURCE VOLTAGE 4/5 VDS 5 1000 0 0 -1.5 -1.2 DRAIN-SOURCE VOLTAGE 10000 1 0.1 -0.9 -0.6 VGS 0 −80 VGS = 0 V 3 GATE-SOURCE VOLTAGE 4 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON-RESISTANCE RDS (ON) ( Ω) 5 (nC) www.freescale.net.cn NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 PDM 0.1 0.1 0.05 t SINGLE PULSE T 0.02 Duty = t/T Rth (ch-c) = 1.56 °C/W 0.01 0.01 10μ 100μ 1m 10m PULSE WIDTH 100m 1 tw (s) SAFE OPERATING AREA EAS – Tch 200 100 100 μs * ID (A) ID max (continuous) 1 ms * DC operation Tc = 25°C 0.1 PULSE Tc = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1 10 120 80 40 0 25 *: SINGLE NONREPETITIVE 0.01 160 50 100 DRAIN-SOURCE VOLTAGE 1000 VDS (V) 75 100 15 V 150 BVDSS IAR 0V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 15 mH 5/5 125 CHANNEL TEMPEATURE (INITIAL) Tch(°C) VDSS max DRAIN CURRENT 1 AVALANCHE ENERGY EAS (mJ) ID max (pulsed) * 10 0.001 10 VDS WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ − 2 V DD ⎠ ⎝ VDSS www.freescale.net.cn