SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE(sat) = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -8 V Collector Current IC -100 mA Base Current IB -20 mA Collector Power Dissipation PC 500 PC * 1000 Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature Range mW 2 * 2SA1384 mounted on ceramic substrate (250 mm x 0.8 t) Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Symbol Testconditons ICBO VCB = -300V , IE = 0 IEBO VEB = -8V , IC = 0 Min Typ Max Unit -0.1 ìA -0.1 ìA Collector-base Breakdown Voltage V(BR)CBO IC = -0.1mA , IE = 0 -300 V Collector-emitter Breakdown Voltage V(BR)CEO IC = -1mA , IB = 0 -300 V DC Current Gain hFE VCE = -10V , IC = -20mA 30 150 Collector-Emitter Saturation Voltage VCE(sat) IC = -20mA , IB = -2mA -0.5 V Base-emitter Saturation Voltage VBE(sat) IC = -20mA , IB = -2mA -1.0 V Transition Frequency fT VCE = -10V , IC = -20mA Collector Output Capacitance Cob VCB = -20V , IE = 0 , f = 1MHz http://www.twtysemi.com [email protected] 50 70 6 4008-318-123 MHz 8 pF 1 of 4 Transistors SMD Type Product specification 2SA1384 hFE Classification J Marking Rank hFE R 30 O 90 50 150 Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 SMD Type Product specification 2SA1384 http://www.twtysemi.com [email protected] 4008-318-123 3 of 4 Tra sistor Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1384 http://www.twtysemi.com [email protected] 4008-318-123 4 of 4