TYSEMI 2SC2881

Product specification
2SC2881
Features
High Voltage : VCEO = 120V
High Transition Frequency : fT = 120MHz(typ.)
Small Flat Package
Complementary to 2SA1201
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
120
V
Collector-Base Voltage
VCBO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Base Current
IB
160
mA
PC
500
PC *
1000
Tj
150
Tstg
-55 to +150
Collector Power Dissipation
Jumction temperature
Storage temperature
mW
2
* Mounted on a ceramic substrate (250 mm x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Emitter Cut-off Current
IEBO
VEB = 5V , IC = 0
0.1
A
Collector Cut-off Current
ICBO
VCB = 120V , IE = 0
0.1
A
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 10mA , IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 1mA , IC = 0
DC Current Gain
Collector-Emitter Saturation Voltage
hFE
VCE = 5V , IC = 100mA
VBE
VCE = 5V , IC = 500mA
Transtion Frequency
fT
VCE = 5V , IC = 100mA
http://www.twtysemi.com
V
5
V
80
240
VCE(sat) IC = 500mA , IB = 50mA
Base-Emitter Voltage
Collector Output Capacitance
120
Cob
1
1
120
VCB = 10V , IE = 0 , f = 1MHz
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V
MHz
30
4008-318-123
V
pF
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SMD Type
Product specification
2SC2881
hFE Classification
C
Marking
Rank
O
Y
hFE
80 160
120 240
Electrical Characteristics Curves
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4008-318-123
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