SMD Type Product specification 2SA1980UF Features Low collector saturation voltage. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-100ìA, IE=0 -50 V Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage -5 BVEBO IE=-10ìA, IC=0 Collector cutoff current ICBO VCB=-50V, IE=0 -0.1 ìA Emitter cutoff current IEBO VEB=-5V, IC=0 -0.1 ìA hFE VCE=-6V, IC=-2mA DC current transfer ratio Collector-emitter saturation voltage V 70 700 VCE(sat) IC=-100mA, IB=-10mA -0.3 Transition frequency fT VCE=-10V, IC=-1mA 80 Output capacitance Cob VCB=-10V, IE=0, f=1MHz Noise figure NF VCE=-6V,IC=-0.1mA,f=1KHz,Rg=10KÙ V MHz 4 7 pF 10 dB hFE Classification C Marking Rank O Y G L hFE 70 140 120 240 200 400 300 700 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1