TYSEMI 2SB1121

Product specification
2SB1121
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Collector current (pulse)
ICP
-5
A
Collector dissipation
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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[email protected]
4008-318-123
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Product specification
2SB1121
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -20V , IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VCB = -4V , IE = 0
-0.1
ìA
DC current Gain
hFE
VCE = -2V , IC = -100mA
fT
VCE = -10V , IC = -50mA
Gain bandwidth product
100
150
VCE(sat) IC = -1.5A , IB = -75mA
Collector-emitter saturation voltage
VBE(sat) IC = -1.5A , IB = -75mA
Base-emitter saturation voltage
560
MHz
-0.35
-0.6
-0.85
-1.2
V
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-30
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-6
pF
ton
60
ns
tstg
350
ns
tf
25
ns
Cob
Turn-on time
Storage time
Fall time
VCB = -10V , f = 1MHz
V
32
Output capacitance
hFE Classification
BC
Marking
Rank
hFE
E
100
F
200
http://www.twtysemi.com
160
G
320
280
560
[email protected]
4008-318-123
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