TYSEMI 2SC4097

Transistors
IC
SMD Type
Product specification
2SC4097
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
ICMax. = 0.5A
1
0.55
High ICMax.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low VCE(sat).
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Optimal for low voltage operation.
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = 100ìA
40
V
Collector-emitter voltage
VCEO
IC = 1mA
32
V
5
Emitter-base voltage
VEBO
IE = 100ìA
Collector cutoff current
ICBO
VCB = 20V
1
A
Emitter cutoff current
IEBO
VEB = 4V
1
A
hFE
VCE = 3V, IC = 10mA
DC Current Gain
V
120
390
VCE(sat) IC/IB = 500mA/50mA
Collector-emitter saturation voltage
Output capacitance
Cob
Transition frequency
fT
0.6
V
VCB = 10V, IE = 0A, f = 1MHz
6.5
pF
VCE = 5V, IE = -20mA, f = 100MHz
250
MHz
hFE Classification
Marking
hFE
CQ
120
270
http://www.twtysemi.com
CR
180
390
[email protected]
4008-318-123
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Transistors
Diodes
IC
SMD Type
Product specification
2SC4097
Typlcal Characteristics
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig.2 Grounded Emitter Output
Fig.3 Grounded Emitter Output
Characteristics
Characteristics
Fig.5 DC Current Gain vs.
Fig. 6 Gain Bandwidth Product vs.
Collector Current
Emitter Current
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
http://www.twtysemi.com
[email protected]
4008-318-123
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