Transistors SMD Type Product specification 2SA1576A Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -60 V Collector-emitter breakdown voltage BVCEO IC=-1mA -50 V Emitter-base breakdown voltage BVEBO IE=-50ìA -6 ICBO VCB=-60V -0.1 ìA IEBO VEB=-6V -0.1 ìA VCE(sat) IC/IB=-50mA/-5mA -0.5 V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio VCE=-6V, IC=-1mA hFE Transition frequency fT Output capacitance Cob V 120 560 VCE=-12V, IE=2mA,f=100MHz 140 VCB=-12V, IE=0A, f=1MHz 4.0 MHz 5.0 pF hFE Classification Marking FQ FR FS hFE 120 270 180 390 270 560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SA1576A Electrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −24.5 −17.5 −10.5 −7.0 −2 −3.5µA −1.2 −0.8 −0.4 −1.6 −60 500 VCE=−5V −3V −1V −250 −150 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (II) 25˚C 100 −500 −450 −400 −350 −300 −200 IB=0 −2.0 Ta=100˚C −40˚C 200 Ta=25˚C −40 Fig.2 Grounded emitter output characteristics (I) DC CURRENT GAIN : hFE 100 50 50 −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) lC/lB=10 −0.5 −0.2 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) http://www.twtysemi.com Ta=25˚C VCE=−12V 200 100 50 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current [email protected] −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) 500 0.5 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) −0.1 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE=−6V −5 −10 −20 −50 −100 −2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) DC CURRENT GAIN : hFE −14.0 −4 −80 COLLECTOR TO MITTER VOLTAGE : VCE (V) 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −21.0 −6 0 Fig.1 Grounded emitter propagation characteristics Ta=25˚C −28.0 −8 BASE TO EMITTER VOLTAGE : VBE (V) 500 −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 4008-318-123 2 of 2