TYSEMI 2SC2411K

Product specification
2SC2411K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
NPN silicon transistor
0.55
Low VCE(sat). Optimal for low voltage operation.
+0.1
1.3-0.1
+0.1
2.4-0.1
High ICMax. ICMax. = 0.5A
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current *
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PC must not be exceeded.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC = 100ìA
40
V
Collector-emitter breakdown voltage
VCEO
IC = 1mA
32
V
Emitter-base breakdown voltage
VEBO
IE = 100ìA
5
V
Collector cutoff current
ICBO
VCB = 20V
Emitter cutoff current
IEBO
VEB = 4V
DC current gain
hFE
VCE = 3V, IC = 100mA
Collector-emitter saturation voltage
120
Output capacitance
Cob
fT
A
1
A
390
VCE(sat) IC/IB = 500mA/50mA
Transition frequency
1
0.6
V
VCB = 10V, IE = 0A, f = 1MHz
6.5
pF
VCE = 5V, IE = -20mA, f = 100MHz
250
MHz
hFE Classification
Marking
CQ
Rank
hFE
CR
Q
120
R
270
http://www.twtysemi.com
180
390
[email protected]
4008-318-123
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