TYSEMI 2SC4332-Z

Transistors
Transistors
IC IC
IC
SMD
SMD Type
Type
Product specification
2SC4332-Z
TO-252
Features
6.50
+0.2
5.30-0.2
Low collector saturation voltage.
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
0.127
max
3 .8 0
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High DC current gain.
+0.15
5.55 -0.15
Fast switching speed.
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
5
A
Collector current (pulse) *
ICP
10
A
Base current
IB
2.5
A
Total power dissipation
PT
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PW
10 ms, duty cycle
50%
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
Transistors
IC IC
IC
SMD
SMD Type
Type
Product specification
2SC4332-Z
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector Cut-off Current
Testconditons
Min
Typ
Max
Unit
VCEO(SUS)
IC = 3.0 A, IB = 0.3 A, L = 1 mH
60
V
VCEX(SUS)
IC = 3.0 A, IB1 = -IB2 = 0.3 A,VBE(OFF) = -1.5
V, L = 180 ìH,
60
V
ICBO
VCE = 60 V, IE = 0
10
ìA
Collector Cut-off Current
ICER
VCE = 60 V, RBE = 51Ù, TA = 125°C
1.0
mA
Collector Cut-off Current
ICEX1
VCE = 60 V, VBE(OFF) = -1.5 V
10
ìA
Collector Cut-off Current
ICEX2
VCE = 60 V, VBE(OFF) = -1.5 V,TA = 125
1.0
mA
Emitter Cut-off Current
IEBO
VEB = 5.0 V, IC = 0
10
ìA
DC Current Gain
hFE1
VCE = 2.0 V, IC = 0.5 A
100
DC Current Gain
hFE2
VCE = 2.0 V, IC = 1.0 A
100
60
DC Current Gain
400
hFE3
VCE = 2.0 V, IC = 3.0 A
Collector Saturation Voltage
VCE(sat)1
IC = 3.0 A, IB = 0.15 A
0.3
V
Collector Saturation Voltage
VCE(sat)2
IC = 4.0 A, IB = 0.2 A
0.5
V
Base Saturation Voltage
VBE(sat)1
IC = 3.0 A, IB = 0.15 A
1.2
V
Base Saturation Voltage
VBE(sat)2
IC = 4.0 A, IB = 0.2 A
1.5
V
Collector Capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
130
150
pF
Gain Bandwidth Product
fT
VCE = 10 V, IE = -0.5 A
Turn-on Time
ton
IC = 3.0 A, RL = 16.7Ù,
0.3
ìs
Storage Time
tstg
IB1 = -IB2 = 0.15 A, VCC =50 V
1.5
ìs
0.3
ìs
Fall Time
tf
MHz
hFE Classification
Marking
M
L
hFE
100 200
150 300
http://www.twtysemi.com
K
200
400
[email protected]
4008-318-123
2 of 2