Product specification 2SB1571 Features Low VCE(sat): VCE(sat) -0.35 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current (DC) Collector Current (pulse) * Base Current (DC) Base Current (pulse) * Total Power Dissipation * IC(DC) -5 A Ic(Pulse) -8 A IB(DC) -0.2 A IB(Pulse) -0.4 A PT 2 W Junction Temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 10 ms, Duty Cycle 50% http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2SB1571 Electrical Characteristics Ta = 25 Parameter Symbol Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Testconditons ICBO VCB = -50 V, IE = 0 Min Typ IEBO VEB = -6.0 V, IC = 0 hFE1 VCE = -1.0 V, IC = -1.0 A 80 hFE2 VCE = -1.0 V, IC = -2.0 A 100 200 VBE VCE = -1.0 V, IC = -0.1 A -0.6 Max Unit -100 nA -100 nA 400 -0.665 -0.7 V Collector Saturation Voltage * VCE(sat)1 IC = -3.0 A, IB = -0.15 A -0.17 -0.35 V Collector Saturation Voltage * VCE(sat)2 IC = -5.0 A, IB = -0.25 A -0.28 -0.55 V Base Saturation Voltage * VBE(sat) IC = -3.0 A, IB = -0.15 A -0.89 -1.2 Base to Emitter Voltage * Gain Bandwidth Product fT Output Capacitance Cob Turn-on Time ton Storage Time tstg Fall Time * Pulsed: PW 150 MHz VCB = -10 V, IE = 0, f = 1.0 MHz 100 pF 265 ns 350 ns 50 ns IC = -2.0 A, VCC = -10 V,RL = 5.0Ù, IB1 = -IB2 = -0.1 A, tf 350 ìs, Duty Cycle V VCE = -10 V, IE = 0.5 A 2%. hFE Classification Marking HX HY HZ hFE 100 200 160 320 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2