Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1256 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Large collector current IC. +0.28 1.50 -0.1 +0.2 9.70 -0.2 Satisfactory linearity of forward current transfer ratio hFE. +0.15 0.50 -0.15 Low collector-emitter saturation voltage VCE(sat). 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 130 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V Collector current IC 5 A Peak collector current ICP Collector power dissipation Ta = 25 PC Collector power dissipation 10 A 1.3 W 40 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-emitter voltage VCEO IC = 10mA, IB = 0 Collector-base cutoff curent ICBO VCB = 100 V,IE = 0 Emitter-base cutoff current IEBO Forward current transfer ratio hFE Min Typ Max 80 V VEB = 5 V, IC = 0 VCE = 2 V, IC = 2 A 90 VCE = 2 V, IC = 0.1 A 45 Unit 10 ìA 50 ìA 260 Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.2 A 0.5 V Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.2 A 1.5 V Transition frequency fT Turn-on time ton Storage time tstg Fall time tf VCE = 10 V, IC = 0.5 A , f = 10 MHz IC = 2 A,IB1 = -IB2 = 0.2 A, VCC = 50 V 30 MHz 0.5 ìs 1.5 ìs 0.15 ìs hFE Classification Rank Q P hFE 90 180 130 260 www.kexin.com.cn 1