TYSEMI 2SK2796S

IC
SMD Type
Product specification
2SK2796S
TO-252
Features
Low on-resistance
typ.
+0.15
1.50-0.15
RDS = 0.12
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
+0.15
0.50-0.15
+0.2
9.70-0.2
High speed switching
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
60
V
Gate to source voltage
VGSS
Drain current
20
ID
5
A
Idp *
20
A
W
Power dissipation
PD
20
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
V
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain source breakdown voltage
VDSS
ID=10mA,VGS=0V
Drain cut-off current
IDSS
VDS=60V,VGS=0
Gate leakage current
IGSS
VGS= 16V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
VGS(off) VDS=10V,ID=1mA
Yfs
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
toff
Fall time
tf
http://www.twtysemi.com
Testconditons
VDS=10V,ID=3A
Min
Typ
Max
60
V
10
10
1.0
2.5
Unit
2.0
4.0
A
A
V
S
VGS=10V,ID=3A
0.12
0.16
VGS=4V,ID=3A
0.16
0.25
180
pF
90
pF
30
pF
ton
9
ns
tr
25
ns
35
ns
55
ns
VDS=10V,VGS=0,f=1MHZ
ID=3A,VGS(on)=10V,RL=10
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4008-318-123
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