SMD Type Product specification 2SK3305 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5A) Avalanche capability ratings +0.2 2.54-0.2 +0.2 15.25-0.2 30 V Low on-state resistance +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 Gate voltage rating +0.2 8.7-0.2 QG = 13 nC TYP. (VDD = 400V, VGS = 10 V, ID = 5.0A) 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V ID 5 A Idp * 20 A Drain current Power dissipation TC=25 75 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Symbol Testconditons IDSS VDS=500V,VGS=0 Min IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=2.5A 1.0 RDS(on) VGS=10V,ID=2.5A Input capacitance Ciss Output capacitance Coss Typ Max Unit 100 A 100 3.5 3.0 1.3 VDS=10V,VGS=0,f=1MHZ A V S 1.5 700 pF 115 pF Reverse transfer capacitance Crss 6 pF Turn-on delay time ton 16 ns Rise time tr 3 ns Turn-off delay time toff Fall time tf http://www.twtysemi.com ID=2.5A,VGS(on)=10V,RG=10 ,VDD=150V,RL=60 [email protected] 4008-318-123 33 ns 5.5 ns 1 of 1