Product specification BSH108 N-channel enhancement mode field-effect transistor 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. 2. Features ■ ■ ■ ■ TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications c c ■ Battery management ■ High speed switch ■ Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol 3 d g 1 2 Top view MSB003 MBB076 s SOT23 http://www.twtysemi.com [email protected] 1 of 2 Product specification BSH108 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS drain-source voltage (DC) Conditions Typ Max Unit Tj = 25 to 150 °C − 30 V ID drain current (DC) Tsp = 25 °C; VGS = 5 V − 1.9 A Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 1 A 77 120 mΩ VGS = 5 V; ID = 1 A 102 140 mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj = 25 to 150 °C − 30 V VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 kΩ − 30 V VGS gate-source voltage (DC) − ±20 V ID drain current (DC) Tsp = 25 °C; VGS = 5 V; Figure 2 and 3 − 1.9 A Tsp = 100 °C; VGS = 5 V; Figure 2 − 1.2 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 7.5 A Ptot total power dissipation Tsp = 25 °C; Figure 1 − 0.83 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C − 0.83 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs − 3.3 A http://www.twtysemi.com [email protected] 2 of 2