DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost PIN • High transition frequency. PMBTH81 DESCRIPTION Code: V31 1 base DESCRIPTION 2 emitter The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its complement is the PMBTH10. 3 collector 3 fpage 1 2 Top view MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 20 V Ptot total power dissipation Ts = 45 °C (note 1) − 400 mW Cce collector-emitter capacitance VCB = 10 V; IB = 0; f = 1 MHz − 0.65 pF Ccb collector-base capacitance VCB = 10 V; IE = 0; f = 1 MHz − 0.85 pF fT transition frequency VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb = 25 °C 600 − MHz Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 3 V IC collector current − 40 mA Ptot total power dissipation Ts = 45 °C (note 1) − 400 mW Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL PARAMETER Rth j-s THERMAL RESISTANCE from junction to soldering point (note 1) 260 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0 20 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 1 mA; IB = 0 20 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 µA; IC = 0 3 − V VCE sat collector-emitter saturation voltage IC = 5 mA; IB = 0.5 mA − 0.5 V VBE on base-emitter ON voltage VCE = 10 V; IC = 5 mA − 0.9 V ICBO collector-base cut-off current VCB = 10 V; IE = 0 − 100 nA IEBO emitter-base cut-off current VEB = 2 V; IC = 0 − 100 nA hFE DC current gain VCE = 10 V; IC = 5 mA 60 − Cce collector-emitter capacitance VCB = 10 V; IB = 0; f = 1 MHz − 0.65 pF Ccb collector-base capacitance VCB = 10 V; IE = 0; f = 1 MHz − 0.85 pF fT transition frequency VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb = 25 °C 600 − MHz September 1995 3 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 MRA568 −30 b11 (mS) −50 IC = 4 mA MRA566 120 handbook, halfpage 930 MHz 450 MHz 250 MHz handbook, halfpage IC = 100 MHz 12 mA b21 (mS) 250 MHz 100 MHz 8 mA 80 450 MHz −70 4 mA 8 mA 930 MHz 40 −90 12 mA −110 −20 20 60 100 0 −120 140 g11 (mS) VCB = 10 V; Tamb = 25 °C. −80 −40 0 40 g21 (mS) VCB = 10 V; Tamb = 25 °C. Fig.2 Common base input admittance (Y11). Fig.3 Forward transfer admittance (Y21). MRA570 0 handbook, halfpage b12 (mS) MRA569 12 handbook, halfpage 100 MHz b22 (mS) 250 MHz −2 930 MHz IC = 4 mA 450 MHz 8 IC = 12 mA −4 8 mA 8 mA 4 mA 12 mA 4 −6 450 MHz 930 MHz 250 MHz 100 MHz −8 −2.5 −2 −1.5 −1 0 −0.5 0 g12 (mS) 0 2 3 4 g22 (mS) VCB = 10 V; Tamb = 25 °C. VCB = 10 V; Tamb = 25 °C. Fig.4 Reverse transfer admittance (Y12). September 1995 1 Fig.5 Common base output admittance (Y22). 4 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 MRA567 1000 gain handbook, halfpage bandwidth product (MHz) 800 600 400 200 0 0 4 8 12 16 20 IC (mA) VCE =10 V; f = 100 MHz. Fig.6 Current gain-bandwidth product as a function of collector current. September 1995 5 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 September 1995 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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