EMF23/UMF23N Transistors Power management (dual transistors) EMF23/UMF23N 2SA1774and DTC114E are housed independently in a EMT6 or UMT6 package. zExternal dimensions (Units : mm) zApplication Power management circuit (3) (2) (6) (1) 1.2 1.6 0.5 0.13 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (4) (5) 0.5 0.5 1.0 1.6 0.22 EMF23 ROHM : EMT6 Each lead has same dimensions Abbreviated symbol : F23 zStructure Silicon epitaxial planar transistor 1.3 0.65 (1) (6) 2.0 (3) (2) (4) (5) 0.2 zEquivalent circuits 0.65 UMF23N 1.25 0.1Min. DTr2 Tr1 R1 ROHM : UMT6 EIAJ : SC-88 R2 (4) 0.9 (1) 0.7 (2) 0∼0.1 (3) 0.15 2.1 Each lead has same dimensions Abbreviated symbol :F23 (5) (6) R1=10kΩ R2=10kΩ zPackage, marking, and packaging specifications Type EMF23 UMF23N Package EMT6 UMT6 Marking F23 F23 Code T2R TR Basic ordering unit(pieces) 8000 3000 1/4 EMF23/UMF23N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage Parameter VEBO −6 V Collector current IC −150 mA Collector power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C ∗ ∗ 120mW per element must not be exceeded. DTr2 Limits Symbol 50 VCC VIN −10~+40 100 IC 50 IO 150(TOTAL) PC Tj 150 Tstg −55 to +150 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Unit V V mA mA mW C C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Symbol Min. Typ. Max. Unit Parameter Conditions Collector-base breakdown voltage BVCBO −60 − − V Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −6 − − V IE=−50µA Collector cutoff current ICBO − − −0.1 µA VCB=−60V Emitter cutoff current IEBO − − −0.1 µA VEB=−6V VCE (sat) − − −0.5 V IC/IB=−50mA/−5mA hFE 180 − 390 − VCE=−6V, IC=−1mA fT − 140 − Cob − 4 5 Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IC=−50µA MHz VCE=−12V, IE=2mA, f=100MHz pF VCB=−12V, IE=0A, f=1MHz DTr2 Parameter Input voltage Output voltage Input current Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.88 mA VI=5V Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 30 − − − VO=5V, IO=5mA Input resistance R1 7 10 13 kΩ Resistance ratio R2/R1 0.8 1 1.2 − fT − 250 − MHz Output current Transition frequency − − VCE=10V, IE=−5mA, f=100MHz ∗ ∗ Transition frequency of the device 2/4 EMF23/UMF23N Transistors zElectrical characteristic curves Tr1 -5 -2 -1 -0.5 -0.2 -28.0 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.4 -0.8 -1.2 -1.6 -500 -450 -400 -350 -300 -80 -250 -60 -200 -150 -40 -100 -20 -50µA IB = 0 -2.0 DC CURRENT GAIN : hFE 25°C -40°C 100 50 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -0.2 -50 -100 -1 -2 -5 -10 -20 lC/lB = 10 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) TRANSITION FREQUENCY : fT (MHz) 1000 -1 -50 -100 -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 Ta = 25°C VCE = -12V 200 100 50 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current -1 -2 -5 -10 -20 -50 -100 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 500 0.5 -0.5 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig.4 DC current gain vs. collector current ( Ι ) -5 Ta = 25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -0.2 -0.5 -4 -1 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 100 -3 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 100°C 200 -2 Fig.3 Grounded emitter output characteristics ( ΙΙ ) 500 200 -1 Fig.2 Grounded emitter output characteristics ( Ι ) VCE = -5V -3V -1V Ta = 25°C 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 50 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 25°C IB = 0 Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -100 -31.5 -8 BASE TO EMITTER VOLTAGE : VBE (V) 500 -35.0 Ta = 25°C COLLECTOR CURRENT : IC (mA) -10 -0.1 -10 VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF23/UMF23N Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 2m 1m 500µ 1k VCC=5V Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 DC CURRENT GAIN : GI 100 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 4/4