MICROCIRCUIT DATA SHEET Original Creation Date: 10/16/95 Last Update Date: 07/30/99 Last Major Revision Date: 06/16/99 MJCD4001B-X REV 1A0 QUAD 2-INPUT NOR GATE WITH BUFFERED OUTPUTS General Description These quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs which improve transfer characteristics by providing very high gain. All inputs are protected against static discharge with diodes to Vdd and Vss. Industry Part Number NS Part Numbers CD4001B JM4001BBCA Prime Die CD4001B Controlling Document 38510/05252, amend. #3 Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MJCD4001B-X REV 1A0 (Absolute Maximum Ratings) (Note 1, 2) Voltage at Any Pin -0.5V to Vdd +0.5V Power Dissipation (Pd) 200mW Vdd Range -0.5V to +18V Storage Temperature (Ts) -65C to +150C Lead Temperature (Tl) (Soldering, 10 seconds) Input Current (each input) 300C + 10mA Maximum Junction Temperature (Tj) 175C Thermal Resistance, Junction to Case See MIL-STD-1835 Note 1: Note 2: "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. Except for "Operating Temperature Range" they are not meant to imply that the device should be operated at these limits. The table of "Electrical Characteristics" provides conditions for actual device operation. All voltages measured with respect to Vss unless otherwise specified. Recommended Operating Conditions Operating Range (VDD) 4.5V to 15.0V Operating Temperature Range -55C to +125C Input Low Voltage Range (VIL) VDD=5.0V VDD=10.0V VDD=15.0V Input High Voltage Range (VIH) VDD=5.0V VDD=10.0V VDD=15.0V 0V to 1.5V 0V to 2.0V 0V to 4.0V 3.5V to 5.0V 8.0V to 10.0V 11.0V to 15.0V 2 MICROCIRCUIT DATA SHEET MJCD4001B-X REV 1A0 Electrical Characteristics DC PARAMETERS SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS Vic+ Input Clamping Voltage (positive) VDD=0.0V, IIN=1mA 5, 6 INPUTS 1.5 V 1 Vic- Input Clamping Voltage (negative) VDD=Open, IIN= -1mA 5, 6 INPUTS -6.0 V 1 IIH Input High Current VDD=18.0V, VM=18.0V, each input measured separately, other inputs at 0.0V 3, 4 INPUTS 100.0 nA 1, 2 IIL Input Low Current VDD=18.0V, VM=0.0V, each input measured separately, other inputs at 0.0V 3, 4 INPUTS -100.0 nA 1, 2 ISS Power Supply Current VDD=18.0V, VINH=18.0V, VM=0.0V, one input per gate at VINH, other inputs at 0.0V 3, 4 VSS -25.0 nA 1 3, 4 VSS -750.0 nA 2 VDD=18.0V, VINL=0.0V, VM=0.0V, all inputs at VINL 3, 4 VSS -25.0 nA 1 3, 4 VSS -750.0 nA 2 VOH Output High Voltage VDD=15.0V, VINL=0.0V, IOH=0.0mA, all inputs at VINL 1, 2 OUTPUTS 14.95 VOL Output Low Voltage VDD=15.0V, VINL=0.0V, VINH=15.0V, IOL=0.0mA, one input per gate at VINH, other inputs at VINL 1, 2 OUTPUTS VIH Input High Voltage VDD=5.0V, VIL=1.5V, VOUT=0.5V, IOUT=0.0mA VIL Input Low Voltage V 1, 2, 3 0.05 V 1, 2, 3 1, INPUTS 2, 9 3.5 V 1, 2, 3 VDD=10.0V, VIL=3.0V, VOUT=1.0V, IOUT=0.0mA 1, INPUTS 2, 9 7.0 V 1, 2, 3 VDD=15.0V, VIL=4.0V, VOUT=1.5V, IOUT=0.0mA 1, INPUTS 2, 9 11.0 V 1, 2, 3 VDD=5.0V, VOUT=4.5V, IOUT=0.0mA 1, INPUTS 2, 9 1.5 V 1, 2, 3 VDD=10.0V, VOUT=9.0V, IOUT=0.0mA 1, INPUTS 2, 9 3.0 V 1, 2, 3 VDD=15.0V, VOUT=13.5V, IOUT=0.0mA 1, INPUTS 2, 9 4.0 V 1, 2, 3 3 MICROCIRCUIT DATA SHEET MJCD4001B-X REV 1A0 Electrical Characteristics DC PARAMETERS(Continued) SYMBOL IOL PARAMETER Output Low Current CONDITIONS NOTES VDD=5.0V, VINH=5.0V, VINL=0.0V, VOL=0.4V VDD=15.0V, VINH=15.0V, VINL=0.0V, VOL=1.5V IOH Output High Current VDD=5.0V, VINH=5.0V, VINL=0.0V, VOH=4.6V VDD=15.0V, VINH=15.0V, VINL=0.0V, VOH=13.5V PINNAME MIN MAX UNIT SUBGROUPS 1, OUTPUTS 0.51 2, 9 mA 1 1, OUTPUTS 0.36 2, 9 mA 2 1, OUTPUTS 0.64 2, 9 mA 3 1, OUTPUTS 3.4 2, 9 mA 1 1, OUTPUTS 2.4 2, 9 mA 2 1, OUTPUTS 4.2 2, 9 mA 3 1, OUTPUTS -0.51 2, 9 mA 1 1, OUTPUTS -0.36 2, 9 mA 2 1, OUTPUTS -0.64 2, 9 mA 3 1, OUTPUTS -3.4 2, 9 mA 1 1, OUTPUTS -2.4 2, 9 mA 2 1, OUTPUTS -4.2 2, 9 mA 3 AC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) AC: VDD=5.0V, CL=50pF, RL=200K Ohms to ground, Tr/Tf=10 + 2ns tpHL tpLH tTHL tTLH Cin Propagation Delay Time Propagation Delay Time Output Transition Time Output Transition Time Input Capacitance VDD=Gnd, f = 1MHz 7, 8 In to On 13 210 nS 9, 11 7, 8 In to On 18 315 nS 10 7, 8 In to On 13 210 nS 9, 11 7, 8 In to On 18 315 nS 10 7, 8 On 10 300 nS 9, 11 7, 8 On 14 450 nS 10 7, 8 On 10 410 nS 9, 11 7, 8 On 14 615 nS 10 12 pF 4 10 4 Inputs MICROCIRCUIT DATA SHEET MJCD4001B-X REV 1A0 Electrical Characteristics DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Delta calculations performed at production burn-in and Group C (operational life test). SYMBOL ISS PARAMETER Power Supply Current CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS VDD=18.0V, VINH=18.0V, VM=0.0V, one input per gate at VINH, other inputs at 0.0V 12 VSS -10 10 nA 1 VDD=18.0V, VINL=0.0V, all inputs at VINL 12 VSS -10 10 nA 1 IOL Output Low Current VDD=5.0V, VINH=5.0V, VOL=0.4V 12 OUTPUTS -15 15 % 1 IOH Output High Current VDD=5.0V, VINL=0.0V, VOH=4.6V 12 OUTPUTS -15 15 % 1 Note 1: Screen tested 100% on each device at +25C, +125C and -55C temperature, subgroups A1, 2 and 3. Note 2: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C and -55C temperature, subgroups A1, 2 and 3. Note 3: Screen tested 100% on each device at +25C and +125C temperature only, subgroups A1 and 2. Note 4: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C and +125C temperature only, subgroups A1 and 2. Note 5: Screen tested 100% on each device at +25C temperature only, subgroup A1. Note 6: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C temperature only, subgroup A1. Note 7: Screen tested 100% on each device at +25C temperature only, subgroup A9. Note 8: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C and -55C temperature, subgroups A9, 10 and 11. Note 9: VIL, VIH, IOL and IOH are guaranteed by applying specified conditions and testing VOL and VOH. Note 10: Guaranteed parameter. This test is only performed during qualification. Note 11: Guaranteed parameter, not tested. Note 12: Drift Values need not be calculated if post burn-in electrical test is performed within 24 hours after burn-in. 5 MICROCIRCUIT DATA SHEET MJCD4001B-X REV 1A0 Revision History Rev ECN # 1A0 M0003456 07/30/99 Rel Date Originator Changes Donald B. Miller 1) Archive MDS MJCD4001BM-X, rev 0BL and release MDS MJCD4001B-X, rev 1A0. 2) Change IIH limit from 1nA to 100nA. 3) Change IIL limit from -1nA to -100nA. 6