ETC JM4049ABEA

MICROCIRCUIT DATA SHEET
Original Creation Date: 07/22/99
Last Update Date: 10/18/99
Last Major Revision Date: 09/10/99
MJCD4049A-X REV 1A0
INVERTING HEX BUFFER
General Description
This hex buffer is a monolithic complementary MOS (CMOS) integrated circuit constructed
with N- and P- channel enhancement mode transistors. This device features logic level
conversion using only one supply voltage (VDD). The input signal high level (VIH) can
exceed the VDD supply voltage when the device is used for logic conversion. The device is
intended for use as a hex buffer, CMOS to DTL/TTL converter or as a CMOS current driver,
and at VDD = 5.0V, it can drive two DTL/TTL loads over the full operating temperature
range.
Industry Part Number
NS Part Numbers
CD4049A
JM4049ABEA
JM4049ABFA
Prime Die
CD4049A
Controlling Document
38510/05503, amend. #3
Processing
Subgrp Description
MIL-STD-883, Method 5004
1
2
3
4
5
6
7
8A
8B
9
10
11
Quality Conformance Inspection
MIL-STD-883, Method 5005
1
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Temp ( oC)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
MICROCIRCUIT DATA SHEET
MJCD4049A-X REV 1A0
(Absolute Maximum Ratings)
(Note 1, 2)
Voltage at Any Pin
-0.5V to Vdd +0.5V
Power Dissipation (Pd)
200mW
Vdd Range
-0.5V to +15.5V
Storage Temperature (Ts)
-65C to +150C
Lead Temperature
(Soldering, 10 seconds)
Input Current (each input)
300C
+ 10mA
Thermal Resistance, junction to case
See MIL-STD-1835
Maximum Junction Temperature (Tj max)
175C
Note 1:
Note 2:
"Absolute Maximum Ratings" are those values beyond which the safety of the device
cannot be guaranteed. Except for "Operating Temperature Range" they are not meant to
imply that the device should be operated at these limits. The table of "Electrical
Characteristics" provides conditions for actual device operation.
All voltages measured with respect to Vss unless otherwise specified.
Recommended Operating Conditions
Supply Voltage (VDD)
4.5V to 12.5V
Operating Temperature Range
-55C to +125C
Input Low Voltage Range (VIL)
VDD=5.0V
VDD=12.5V
Input High Voltage Range (VIH)
VDD=5.0V
VDD=12.5V
0V to 0.85V
0V to 2.1V
3.95V to 5.0V
10.0V to 12.5V
2
MICROCIRCUIT DATA SHEET
MJCD4049A-X REV 1A0
Electrical Characteristics
DC PARAMETERS
SYMBOL
PARAMETER
CONDITIONS
NOTES
PINNAME
MIN
MAX
UNIT
SUBGROUPS
Vic-
Input Clamping
Voltage
(negative)
VDD=0.0V, VSS=Gnd, IIN=-1mA (other
inputs open)
5, 6 INPUTS
-6.0
V
1
IIH
Input High
Current
VDD=15.0V, VIN=15.0V
(each input measured separately)
3, 4 INPUTS
100.0
nA
1, 2
IIL
Input Low Current
VDD=15.0V, VIN=0.0V
(each input measured separately)
3, 4 INPUTS
-100.0 nA
1, 2
ISS
Power Supply
Current
VDD=15.0V, VIN=15.0V or VIN=0.0V,
VM=0.0V
3, 4 VSS
-75.0
nA
1
3, 4 VSS
-750.0 nA
2
VOH1
VOH2
VOH3
VOH4
VOL1
VOL2
VOL3
VOL4
Output High
Voltage
Output High
Voltage
Output High
Voltage
Output High
Voltage
Output Low
Voltage
Output Low
Voltage
Output Low
Voltage
Output Low
Voltage
VDD=4.5V, VIL=0.9V, IOH=-0.10mA
1, 2 OUTPUTS 2.5
V
1
VDD=4.5V, VIL=0.65V, IOH=-0.10mA
1, 2 OUTPUTS 2.5
V
2
VDD=4.5V, VIL=0.95V, IOH=-0.10mA
1, 2 OUTPUTS 2.5
V
3
VDD=5.0V, VIL=0.9V, IOH=-0.45mA
1, 2 OUTPUTS 4.5
V
1
VDD=5.0V, VIL=0.65V, IOH=-0.35mA
1, 2 OUTPUTS 4.5
V
2
VDD=5.0V, VIL=0.95V, IOH=-0.65mA
1, 2 OUTPUTS 4.5
V
3
VDD=5.0V, VIL=0.9V, IOH=-0.0mA
1, 2 OUTPUTS 4.95
V
1
VDD=5.0V, VIL=0.65V, IOH=-0.0mA
1, 2 OUTPUTS 4.95
V
2
VDD=5.0V, VIL=0.95V, IOH=-0.0mA
1, 2 OUTPUTS 4.95
V
3
VDD=12.5V, VIL=2.15V, IOH=-0.0mA
1, 2 OUTPUTS 11.25
V
1
VDD=12.5V, VIL=1.95V, IOH=-0.0mA
1, 2 OUTPUTS 11.25
V
2
VDD=12.5V, VIL=2.24V, IOH=-0.0mA
1, 2 OUTPUTS 11.25
V
3
VDD=5.5V, VIH=3.95V, IOL=0.23mA
1, 2 OUTPUTS
0.5
V
1
VDD=5.5V, VIH=3.85V, IOL=0.23mA
1, 2 OUTPUTS
0.5
V
2
VDD=5.5V, VIH=4.05V, IOL=0.23mA
1, 2 OUTPUTS
0.5
V
3
VDD=5.0V, VIH=3.95V, IOL=3.0mA
1, 2 OUTPUTS
0.5
V
1
VDD=5.0V, VIH=3.85V, IOL=2.10mA
1, 2 OUTPUTS
0.5
V
2
VDD=5.0V, VIH=4.05V, IOL=3.70mA
1, 2 OUTPUTS
0.5
V
3
VDD=5.0V, VIH=3.95V, IOL=0.0mA
1, 2 OUTPUTS
0.05
V
1
VDD=5.0V, VIH=3.85V, IOL=0.0mA
1, 2 OUTPUTS
0.05
V
2
VDD=5.0V, VIH=4.05V, IOL=0.0mA
1, 2 OUTPUTS
0.05
V
3
VDD=12.5V, VIH=10.25V, IOL=0.0mA
1, 2 OUTPUTS
1.25
V
1
VDD=12.5V, VIH=10.00V, IOL=0.0mA
1, 2 OUTPUTS
1.25
V
2
VDD=12.5V, VIH=10.50V, IOL=0.0mA
1, 2 OUTPUTS
1.25
V
3
3
MICROCIRCUIT DATA SHEET
MJCD4049A-X REV 1A0
Electrical Characteristics
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: VDD=5.0V, CL=50pF, RL=200K Ohms to ground, Tr/Tf=10nS + 2nS
SYMBOL
tpHL
tpLH
tTHL
tTLH
Cin
PARAMETER
CONDITIONS
NOTES
Propagation Delay
Time
Propagation Delay
Time
Transition Time
Transition Time
Input Capacitance
VDD=Gnd, f=1MHz
PINNAME
MIN
MAX
UNIT
SUBGROUPS
7, 8 In to
On
6
150
nS
9, 11
7, 8 In to
On
9
225
nS
10
7, 8 In to
On
6
230
nS
9, 11
7, 8 In to
On
9
345
nS
10
7, 8 On
6
70
nS
9, 11
7, 8 On
9
105
nS
10
7, 8 On
6
270
nS
9, 11
7, 8 On
9
405
nS
10
20
pF
4
10
INPUTS
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Delta calculations performed at production burn-in and Group C (operational life test).
ISS
Power Supply
Current
VDD=15.0V, VIN=15.0V or VIN=0.0V,
VM=0.0V
12
VSS
-20.0
20.0
nA
1
VOL1
Output Low
Voltage
VDD=5.5V, VIH=3.95V, IOL=0.23ma
12
OUTPUTS -0.04
0.04
V
1
VOH1
Output High
Voltage
VDD=4.5V, VIL=0.9V, IOH=-0.10ma
12
OUTPUTS -0.08
0.08
V
1
Note 1:
Screen tested 100% on each device at +25C, +125C and -55C temperature, subgroups A1,
2 and 3.
Note 2: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C and -55C
temperature, subgroups A1, 2 and 3.
Note 3: Screen tested 100% on each device at +25C and +125C temperature only, subgroup A1 and
2.
Note 4: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C and +125C temperature
only, subgroup A1 and 2.
Note 5: Screen tested 100% on each device at +25C temperature only, subgroup A1.
Note 6: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C temperature only,
subgroup A1.
Note 7: Screen tested 100% on each device at +25C temperature only, subgroup A9.
Note 8: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C and -55C
temperature, subgroups A9, 10 and 11.
Note 9: VIL, VIH, IOL and IOH are guaranteed by applying specified conditions and testing VOL
and VOH.
Note 10: Guaranteed parameter. This test is only performed during qualification.
Note 11: Guaranteed parameter, not tested.
Note 12: Drift values need not be calculated if post burn-in electrical test is performed
within 24 hours after burn-in.
4
MICROCIRCUIT DATA SHEET
MJCD4049A-X REV 1A0
Revision History
Rev
ECN #
1A0
M0003567 10/18/99
Rel Date
Originator
Changes
Donald B. Miller 1) Archive JRETS4049MX, Rev. 1A, release to MDS
MJCD4049A-X, Rev. 1A0. 2) Change IIH room limit from
1nA to 100nA. Change IIH 125C limit from 45nA to
100nA. 3) Change IIL room limit from -1nA to -100nA.
Change IIL 125C limit from -45nA to -100nA.
5