PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE6500179A 1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High output power: PO (1 dB) = 30.0 dBm TYP. • High linear gain: GL = 12.0 dB TYP. • High power added efficiency: ηadd = 50 % TYP. @ VDS = 6.0 V, IDset = 200 mA, f = 1.9 GHz ORDERING INFORMATION Part Number NE6500179A-T1 Package 79A Supplying Form • 12 mm wide embossed taping • Qty 1 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE6500179A Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10021EJ01V0DS (1st edition) (Previous No. P15107EJ1V0DS00) Date Published November 2001 CP(K) Printed in Japan The mark ! shows major revised points. NEC Corporation 1999 NEC Compound Semiconductor Devices 2001 NE6500179A ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V Gate to Source Voltage VGSO −7 V Drain Current ID 2.5 A Gate Forward Current IGF 20 mA Gate Reverse Current IGR 20 mA Total Power Dissipation Ptot 7 W Channel Temperature Tch 150 °C Storage Temperature Tstg −65 to +150 °C RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compression Channel Temperature Symbol Test Conditions MIN. TYP. MAX. Unit VDS − 6.0 6.0 V Gcomp − − 3.0 dB Tch − − +125 °C MIN. TYP. MAX. Unit ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified, using NEC standard test fixture.) Parameter Symbol Test Conditions Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V − 1.8 − A Pinch-off Voltage Vp VDS = 2.5 V, ID = 10 mA −3.6 − −1.6 V Igd = 10 mA 15 − − V Channel to Case − 15 18 °C/W f = 1.9 GHz, VDS = 6.0 V, − 30.0 − dBm Rg = 30 Ω, IDset = 200 mA (RF OFF) − 340 − mA Note 2 − 50 − % 11.0 12.0 − dB Gate to Drain Break Down Voltage Thermal Resistance Gain 1 dB Compression Output Power Drain Current BVgd Rth PO (1 dB) ID Power Added Efficiency ηadd Linear Gain Note 1 GL Notes 1. Pin = 0 dBm 2. DC performance is 100 % testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2 Preliminary Data Sheet PG10021EJ01V0DS NE6500179A TYPICAL CHARACTERISTICS (TA = +25 °C) OUTPUT POWER, DRAIN CURRENT, GATE CURRENT vs. INPUT POWER 1 000 10 800 8 Pout 600 25 ID 400 20 200 15 IG 0 10 5 –5 0 5 10 15 20 25 6 4 2 Gate Current IG (mA) 30 VDS = 6.0 V IDset = 200 mA (RF OFF) Rg = 30 Ω, f = 1.9 GHz Drain Current ID (mA) Output Power Pout (dBm) 35 0 –2 Input Power Pin (dBm) Remark The graph indicates nominal characteristics. Preliminary Data Sheet PG10021EJ01V0DS 3 NE6500179A S-PARAMETERS Test Conditions: VDS = 6.0 V, IDset = 200 mA (RF OFF) Frequency 4 S11 S21 S12 S22 MHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) 500 0.895 −145.1 6.305 96.12 0.037 18.49 0.595 −172.3 600 0.890 −152.4 5.356 91.79 0.037 15.64 0.601 −175.2 700 0.886 −158.2 4.684 87.59 0.038 13.66 0.607 −177.3 800 0.884 −163.0 4.157 84.18 0.038 11.83 0.608 −179.2 900 0.881 −167.0 3.708 81.06 0.039 10.32 0.609 178.9 1000 0.879 −170.4 3.381 78.08 0.039 9.36 0.610 177.3 1100 0.879 −173.4 3.105 75.16 0.039 8.22 0.609 175.8 1200 0.879 −176.4 2.880 72.51 0.040 6.99 0.609 174.3 1300 0.877 −179.1 2.681 69.60 0.040 5.95 0.607 172.7 1400 0.876 178.3 2.518 66.85 0.041 5.24 0.607 171.1 1500 0.876 175.7 2.368 64.05 0.041 4.31 0.606 169.4 1600 0.876 173.0 2.237 61.40 0.041 3.11 0.606 167.9 1700 0.877 170.4 2.122 58.60 0.042 1.97 0.604 166.2 1800 0.875 167.7 2.021 55.76 0.042 1.23 0.603 164.6 1900 0.876 165.0 1.927 52.81 0.043 0.05 0.601 162.7 2000 0.875 162.5 1.842 49.91 0.042 −0.66 0.600 160.6 2100 0.876 159.9 1.765 47.10 0.043 −2.19 0.600 158.5 2200 0.875 157.2 1.691 44.16 0.043 −3.00 0.600 156.4 2300 0.875 154.6 1.620 41.13 0.043 −4.19 0.600 154.3 2400 0.875 151.9 1.552 38.07 0.043 −5.43 0.601 152.0 2500 0.876 149.3 1.489 35.13 0.043 −6.55 0.603 149.7 2600 0.876 146.7 1.429 32.08 0.043 −8.05 0.603 147.3 2700 0.877 144.0 1.366 29.08 0.043 −9.20 0.606 144.9 2800 0.876 141.6 1.305 26.27 0.043 −10.15 0.610 142.6 2900 0.875 139.5 1.247 23.72 0.042 −11.98 0.613 140.7 3000 0.880 137.1 1.203 20.91 0.042 −12.74 0.620 138.2 Preliminary Data Sheet PG10021EJ01V0DS NE6500179A PACKAGE DIMENSIONS 79A (UNIT: mm) BOTTOM VIEW 4.2 MAX. 1.5±0.2 Source 1.2 MAX. 1.0 MAX. 4.4 MAX. 7 9 Drain Gate 0.8±0.15 C 0.6±0.15 Drain 0.8 MAX. 0.4±0.15 5.7 MAX. 3.6±0.2 0.2±0.1 0.9±0.2 5.7 MAX. Gate T Source Preliminary Data Sheet PG10021EJ01V0DS 5 NE6500179A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Infrared Reflow Package peak temperature: 235 °C or below, Time: 30 seconds or less (at 210 °C or higher), Count: 2 times or less, Exposure: limit: None Note Partial Heating Pin temperature: 260 °C or below, Time: 5 seconds or less (per pin row) Exposure: limit: None Note Recommended Condition Symbol IR35-00-2 − Note After opening the dry pack, store it at 25 °C or less and 65 % RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). 6 Preliminary Data Sheet PG10021EJ01V0DS NE6500179A • The information in this document is current as of November, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Preliminary Data Sheet PG10021EJ01V0DS 7 NE6500179A SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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