ETC CMBT2369

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
CMBT2369
SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR
N–P N transistor
Marking
CMBT2369 = lJ
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (d.c. value)
Total power dissipation up to Tamb = 25 °C
D.C. current gain
IC = 10mA; VCE = 1 V
IC = 100 mA; VCE = 2 V
Storage time
ICon = IBon = IBoff = 10 mA
Continental Device India Limited
Data Sheet
VCB0
VCES
VCE0
IC
Ptot
max.
max.
max.
max.
max.
hFE
hFE
>
ts
<
40
40
15
500
250
V
V
V
mA
mW
40 to 120
20
13 ns
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CMBT2369
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c. value)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
VCB0
VCES
VCE0
VEB0
IC
Ptot
Tstg
Tj
max.
max.
max.
max.
max.
max.
–55 to
max.
40 V
40 V
15 V
4,5 V
500 mA
250 mW
150° C
150 ° C
THERMAL RESISTANCE
From junction to ambient in free air
Rth j–a
=
500 K/W
<
<
400 nA
30 mA
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Tj = 25 °C unless otherwise specified
Collector cut–off current
ICB0
IE = 0; VCB = 20 V
ICB0
IE = 0; VCB = 20V; Tj = 125°C
Saturation voltages
VCEsat
IC = 10 mA; lB = 1 mA
VBEsat
D.C. current gain
hFE
IC = 10mA; VCE = 1 V
hFE
IC = 10mA; VCE = 1 V; Tamb = –55°C
hFE
IC = 100 mA; VCE = 2 V
Output capacitance at f = 1 MHz
Co
IE = 0; VCB = 5V
Small–signal current gain
hfe
IC = 1,0mA; VCE = 10V; f = 100MHz; Tamb = 25°C
Breakdown voltages
V(BR)CEO
IC = 10 mA; lB = 0
V(BR)CBO
IC = 10mA; IE = 0
V(BR)EBO
IC = 0; IE = 10mA
V(BR)CES
IC = 10mA; VBE = 0
<
0,25 V
0,70 to 0,85 V
>
>
40 to 120
20
20
<
4,0 pF
>
5,0
min.
min.
min.
min.
15
40
4,5
40
V
V
V
V
Switching times at Tamb = 25 °C
Storage time
ICon = IBon = –IBoff = 10 mA
ts
typ.
<
5,0 ns
13 ns
Turn–on time
IC = 10mA; IBon = 3mA; VCC = 3V
Turn–off time
IC = 10mA; IBon = 3mA; IBoff = 1,5mA; VCC = 3V
t on
t on
toff
toff
typ.
<
typ.
<
8,0
12
10
18
Continental Device India Limited
Data Sheet
ns
ns
ns
ns
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Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
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