ETC AT52BR1662A

Features
• 16-Mbit (x16) Flash and 2-megabit/4-megabit SRAM
• 2.7V to 3.3V Operating Voltage
• Low Operating Power
– 40 mA Operating Current (Maximum)
– 35 µA Standby Current (Maximum)
• Industrial Temperature Range
Flash
• 2.7V to 3.3V Read/Write
• Access Time – 70 ns, 90 ns
• Sector Erase Architecture
•
•
•
•
•
•
•
•
•
•
•
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time – 12 µs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase of a
Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
– 12 mA Active
– 13 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
Top/Bottom Boot Block Configuration
128-bit Protection Register
Minimum 100,000 Erase Cycles
16-megabit
Flash +
2-megabit/
4-megabit
SRAM Stack
Memory
AT52BR1662A(T)
AT52BR1664A(T)
SRAM
•
•
•
•
•
2-megabit (128K x 16)/4-megabit (256K x 16)
2.7V to 3.3V VCC Operating Voltage
70 ns Access Time
Fully Static Operation and Tri-state Output
1.2V (Min) Data Retention
Device Number
Flash Configuration
SRAM Configuration
AT52BR1662A(T)
16M (1M x 16)
2M (128K x 16)
AT52BR1664A(T)
16M (1M x 16)
4M (256K x 16)
Rev. 3361A–STKD–6/03
1
CBGA Top View
1
2
3
4
5
6
7
8
9
10
11
12
NC
NC
NC
A11
A15
A14
A13
A12
GND
NC
NC
NC
A16
A8
A10
A9
I/O15
SWE
I/O14
I/O7
WE
RDY BUSY
I/O13
I/O6
I/O4
I/O5
SGND
RESET
I/O12
SCS2
SVcc
Vcc
NC
Vpp
A19
I/O10
I/O2
I/O3
SLB
SUB
SOE
I/O9
I/O8
I/O0
I/O1
A18
A17
A7
A6
A3
A2
A1
SCS1
NC
A5
A4
A0
CE
GND
OE
NC
NC
NC
A
B
C
D
E
I/O11
F
G
H
NC
Pin
Configurations
2
NC
Pin Name
Function
A0 - A16
Flash/SRAM Common Address Input for 2M SRAM
A0 - A17
Flash/SRAM Common Address Input for 4M SRAM
A18 - A19
Flash Address Input
CE
Flash Chip Enable
OE/SOE
Flash/SRAM, Output Enable
WE/SWE
Flash/SRAM, Write Enable
VCC
Flash Power Supply
VPP
Optional Flash Power Supply for Faster Program/Erase Operations
I/O0-I/O15
Data Inputs/Outputs
SCS1, SCS2
SRAM Chip Select
RDY/BUSY
Flash Ready/Busy Output
SVCC
SRAM Power Supply
GND/SGND
Flash/SRAM GND
SUB
SRAM Upper Byte
SLB
SRAM Lower Byte
NC
No Connect
RESET
Flash Reset
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Description
The AT52BR1662A(T) combines a single plane 16-Mbit Flash and a 2-megabit SRAM in a stacked 66-ball CBGA package;
while the AT52BR1664A(T) combines a single plane 16-Mbit Flash and a 4-megabit SRAM in a stacked 66-ball CBGA
package. Both devices operate at 2.7V to 3.3 in the industrial temperature range.
Block Diagram
ADDRESS
OE WE
SOE SWE
RESET
CE
FLASH
SRAM
RDY/BUSY
SCS1
SCS2
SUB
SLB
DATA
Absolute Maximum Ratings
Temperature under Bias.................................. -40° C to +85° C
Storage Temperature .................................... -55° C to +150° C
All Input Voltages
except VPP and RESET
(including NC Pins)
with Respect to Ground .....................................-0.2V to +3.3V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Voltage on VPP
with Respect to Ground ..................................-0.2V to + 6.25V
Voltage on RESET
with Respect to Ground ...................................-0.2V to +13.5V
All Output Voltages
with Respect to Ground .....................................-0.2V to +0.2V
DC and AC Operating Range
AT52BR1662A(T)/1664A(T)-70, -90
Operating Temperature (Case)
VCC Power Supply
Industrial
-40° C - 85° C
2.7V to 3.3V
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16-Mbit Flash Memory Block Diagram
I/O0 - I/O15
INPUT
BUFFER
INPUT
BUFFER
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
REGISTER
A0 - A19
OUTPUT
MULTIPLEXER
OUTPUT
BUFFER
CE
WE
OE
RESET
COMMAND
REGISTER
ADDRESS
LATCH
DATA
COMPARATOR
Y-DECODER
Y-GATING
RDY/BUSY
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
VPP
VCC
GND
X-DECODER
4
MAIN
MEMORY
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
16-Mbit Flash
Description
The 16-Mbit Flash is organized as 1,048,576 words of 16 bits each. The x16 data appears on
I/O0 - I/O15. The memory is divided into 39 sectors for erase operations. The device has CE
and OE control signals to avoid any bus contention. This device can be read or reprogrammed
using a single power supply, making it ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the device in
other operation modes such as program and erase. The device has the capability to protect
the data in any sector (see “Sector Lockdown” section).
To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend
feature. This feature will put the erase or program on hold for any amount of time and let the
user read data from or program data to any of the remaining sectors within the memory. The
end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by
the toggle bit.
The VPP pin provides data protection. When the VPP input is below 0.4V, the program and
erase functions are inhibited. When VPP is at 0.9V or above, normal program and erase operations can be performed.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for
writing into the device. This mode (Single Pulse Word Program) is exited by powering down
the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back
to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not
work while in this mode; if entered they will result in data being programmed into the device. It
is not recommended that the six-byte code reside in the software of the final product but only
exist in external programming code.
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Device
Operation
READ: The Flash is accessed like an EPROM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins are asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dualline control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES: When the device is first powered on, it will be reset to the read or
standby mode, depending upon the state of the control line inputs. In order to perform other
device functions, a series of command sequences are entered into the device. The command
sequences are shown in the “Command Definition in Hex” table on page 14 (I/O8 - I/O15 are
don’t care inputs for the command codes). The command sequences are written by applying a
low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address
is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the
first rising edge of CE or WE. Standard microprocessor write timings are used. The address
locations used in the command sequences are not affected by entering the command
sequences.
RESET: A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET input
halts the present device operation and puts the outputs of the device in a high impedance
state. When a high level is reasserted on the RESET pin, the device returns to the read or
standby mode, depending upon the state of the control inputs.
ERASURE: Before a word can be reprogrammed, it must be erased. The erased state of
memory bits is a logical “1”. The entire device can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command.
CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase
software code. After the chip erase has been initiated, the device will internally time the erase
operation so that no external clocks are required. The maximum time to erase the chip is tEC.
If the sector lockdown has been enabled, the chip erase will not erase the data in the sector
that has been locked out; it will erase only the unprotected sectors. After the chip erase, the
device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 39 sectors (SA0 - SA38) that can be individually erased. The Sector Erase command is a six-bus
cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while
the 30H data input command is latched on the rising edge of WE. The sector erase starts after
the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will
automatically time to completion. The maximum time to erase a sector is tSEC. When the sector programming lockdown feature is not enabled, the sector will erase (from the same Sector
Erase command). An attempt to erase a sector that has been protected will result in the operation terminating immediately.
WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logical “0”)
on a word-by-word basis. Programming is accomplished via the internal device command register and is a four-bus cycle operation. The device will automatically generate the required
internal program pulses.
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AT52BR1662A(T)/1664A(T)
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AT52BR1662A(T)/1664A(T)
Any commands written to the chip during the embedded programming cycle will be ignored. If
a hardware reset happens during programming, the data at the location being programmed
will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase
operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle
time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a
program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the
erase or program operation was performed successfully.
VPP PIN: The circuitry of the device is designed so that it cannot be programmed or erased if
the VPP voltage is less that 0.4V. When VPP is at 0.9V or above, normal program and erase
operations can be performed. The VPP pin cannot be left floating.
PROGRAM/ERASE STATUS: The device provides several bits to determine the status of a
program or erase operation: I/O2, I/O3, I/O5, I/O6 and I/O7. The “Status Bit Table” on page 13
and the following four sections describe the function of these bits. To provide greater flexibility
for system designers, the Flash contains a programmable configuration register. The configuration register allows the user to specify the status bit operation. The configuration register can
be set to one of two different values, “00” or “01”. If the configuration register is set to “00”, the
part will automatically return to the read mode after a successful program or erase operation. If
the configuration register is set to a “01”, a Product ID Exit command must be given after a
successful program or erase operation before the part will return to the read mode. It is important to note that whether the configuration register is set to a “00” or to a “01”, any
unsuccessful program or erase operation requires using the Product ID Exit command to
return the device to read mode. The default value (after power-up) for the configuration register is “00”. Using the four-bus cycle Set Configuration Register command as shown in the
“Command Definition in Hex” table on page 14, the value of the configuration register can be
changed. Voltages applied to the RESET pin will not alter the value of the configuration register. The value of the configuration register will affect the operation of the I/O7 status bit as
described below.
DATA POLLING: The 16-Mbit Flash features Data Polling to indicate the end of a program
cycle. If the status configuration register is set to a “00”, during a program cycle an attempted
read of the last word loaded will result in the complement of the loaded data on I/O7. Once the
program cycle has been completed, true data is valid on all outputs and the next cycle may
begin. During a chip or sector erase operation, an attempt to read the device will give a “0” on
I/O7. Once the program or erase cycle has completed, true data will be read from the device.
Data Polling may begin at any time during the program cycle. Please see “Status Bit Table” on
page 13 for more details.
If the status bit configuration register is set to a “01”, the I/O7 status bit will be low while the
device is actively programming or erasing data. I/O7 will go high when the device has completed a program or erase operation. Once I/O7 has gone high, status information on the other
pins can be checked.
The Data Polling status bit must be used in conjunction with the erase/program and VPP status
bit as shown in the algorithm in Figures 1 and 2 on page 11.
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TOGGLE BIT: In addition to Data Polling the device provides another method for determining
the end of a program or erase cycle. During a program or erase operation, successive
attempts to read data from the memory will result in I/O6 toggling between one and zero. Once
the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. Please see “Status Bit Table”
on page 13 for more details.
The toggle bit status bit should be used in conjunction with the erase/program and VPP status
bit as shown in the algorithm in Figures 3 and 4 on page 12.
ERASE/PROGRAM STATUS BIT: The device offers a status bit on I/O5, which indicates
whether the program or erase operation has exceeded a specified internal pulse count limit. If
the status bit is a “1”, the device is unable to verify that an erase or a word program operation
has been successfully performed. If a program (Sector Erase) command is issued to a protected sector, the protected sector will not be programmed (erased). The device will go to a
status read mode and the I/O5 status bit will be set high, indicating the program (erase) operation did not complete as requested. Once the erase/program status bit has been set to a “1”,
the system must write the Product ID Exit command to return to the read mode. The
erase/program status bit is a “0” while the erase or program operation is still in progress.
Please see “Status Bit Table” on page 13 for more details.
V PP STATUS BIT: The device provides a status bit on I/O3, which provides information
regarding the voltage level of the VPP pin. During a program or erase operation, if the voltage
on the VPP pin is not high enough to perform the desired operation successfully, the I/O3 status bit will be a “1”. Once the VPP status bit has been set to a “1”, the system must write the
Product ID Exit command to return to the read mode. On the other hand, if the voltage level is
high enough to perform a program or erase operation successfully, the VPP status bit will output a “0”. Please see “Status Bit Table” on page 13 for more details.
SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled.
These sectors can contain secure code that is used to bring up the system. Enabling the lockdown feature will allow the boot code to stay in the device while data in the rest of the device is
updated. This feature does not have to be activated; any sector’s usage as a write-protected
region is optional to the user.
At power-up or reset, all sectors are unlocked. To activate the lockdown for a specific sector,
the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked
down, the contents of the sector is read-only and cannot be erased or programmed.
SECTOR LOCKDOWN DETECTION: A software method is available to determine if programming of a sector is locked down. When the device is in the software product identification
mode (see “Software Product Identification Entry/Exit” sections on page 25), a read from
address location 00002H within a sector will show if programming the sector is locked down. If
the data on I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program
lockdown feature has been enabled and the sector cannot be programmed. The software
product identification exit code should be used to return to standard operation.
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AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is
through reset or power-up cycles. After power-up or reset, the content of a sector that is
locked down can be erased and reprogrammed.
ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to
interrupt a sector or chip erase operation and then program or read data from a different sector
within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 µs to suspend the erase operation. After the erase operation has been
suspended, the system can then read data or program data to any other sector within the
device. An address is not required during the Erase Suspend command. During a sector erase
suspend, another sector cannot be erased. To resume the sector erase operation, the system
must write the Erase Resume command. The Erase Resume command is a one-bus cycle
command. The device also supports an erase suspend during a complete chip erase. While
the chip erase is suspended, the user can read from any sector within the memory that is protected. The command sequence for a chip erase suspend and a sector erase suspend are the
same.
PROGRAM SUSPEND/PROGRAM RESUME: The Program Suspend command allows the
system to interrupt a programming operation and then read data from a different word within
the memory. After the Program Suspend command is given, the device requires a maximum
of 20 µs to suspend the programming operation. After the programming operation has been
suspended, the system can then read data from any other word that is not contained in the
sector in which the programming operation was suspended. An address is not required during
the program suspend operation. To resume the programming operation, the system must write
the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same,
and the command sequence for the erase resume and program resume are the same.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware
operation mode can be used by an external programmer to identify the correct programming
algorithm for the Atmel product.
For details, see “Operating Modes” on page 18 (for hardware operation) or “Software Product
Identification Entry/Exit” sections on page 25. The manufacturer and device codes are the
same for both modes.
128-BIT PROTECTION REGISTER: The device contains a 128-bit register that can be used
for security purposes in system design. The protection register is divided into two 64-bit
blocks. The two blocks are designated as block A and block B. The data in block A is
non-changeable and is programmed at the factory with a unique number. The data in block B
is programmed by the user and can be locked out such that data in the block cannot be reprogrammed. To program block B in the protection register, the four-bus cycle Program
Protection Register command must be used as shown in the “Command Definition in Hex”
table on page 14. To lock out block B, the four-bus cycle Lock Protection Register command
must be used as shown in the “Command Definition in Hex” table. Data bit D1 must be zero
during the fourth bus cycle. All other data bits during the fourth bus cycle are don’t cares. To
determine whether block B is locked out, the Product ID Entry command is given followed by a
read operation from address 80H. If data bit D1 is zero, block B is locked. If data bit D1 is one,
block B can be reprogrammed. Please see the “Protection Register Addressing Table” on
page 15 for the address locations in the protection register. To read the protection register, the
Product ID Entry command is given followed by a normal read operation from an address
within the protection register. After determining whether block B is protected or not, or reading
the protection register, the Product ID Exit command must be given prior to performing any
other operation.
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RDY/BUSY: For the 16-Mbit Flash, an open-drain READY/BUSY output pin provides another
method of detecting the end of a program or erase operation. RDY/BUSY is actively pulled low
during the internal program and erase cycles and is released at the completion of the cycle.
The open-drain connection allows for OR-tying of several devices to the same RDY/BUSY
line. Please see “Status Bit Table” on page 13 for more details.
HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against
inadvertent programs to the device in the following ways: (a) VCC sense: if VCC is below 1.8V
(typical), the program function is inhibited. (b) VCC power-on delay: once VCC has reached the
VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c)
Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d)
Program inhibit: VPP is less than VILPP. (e) VPP power-on delay: once VPP has reached 1.65V,
program and erase operations are inhibited for 100 ns.
INPUT LEVELS: While operating with a 2.7V to 3.3V power supply, the address inputs and
control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the
operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V.
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AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Figure 1. Data Polling Algorithm
(Configuration Register = 00)
Figure 2. Data Polling Algorithm
(Configuration Register = 01)
START
START
Read I/O7 - I/O0
Read I/O7 - I/O0
Addr = VA
Read I/O7 - I/O0
YES
I/O7 = Data?
Toggle Bit =
Toggle?
NO
NO
YES
NO
I/O3, I/O5 = 1?
NO
I/O3, I/O5 = 1?
YES
YES
Read I/O7 - I/O0
Addr = VA
I/O7 = Data?
Read I/O7 - I/O0
Twice
YES
Toggle Bit =
Toggle?
NO
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
YES
Program/Erase
Operation
Successful,
Device in
Read Mode
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Note:
Notes:
NO
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector
address within the sector being erased. During
chip erase, a valid address is any non-protected
sector address.
2. I/O7 should be rechecked even if I/O5 = “1”
because I/O7 may change simultaneously with
I/O5.
Program/Erase
Operation
Successful,
Write Product
ID Exit Command
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector
address within the sector being erased. During
chip erase, a valid address is any non-protected
sector address.
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Figure 3. Toggle Bit Algorithm
(Configuration Register = 00)
Figure 4. Toggle Bit Algorithm
(Configuration Register = 01)
START
START
Read I/O7 - I/O0
Read I/O7 - I/O0
Read I/O7 - I/O0
Read I/O7 - I/O0
Toggle Bit =
Toggle?
NO
Toggle Bit =
Toggle?
YES
YES
NO
NO
I/O3, I/O5 = 1?
YES
Read I/O7 - I/O0
Twice
NO
Toggle Bit =
Toggle?
YES
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Note:
12
I/O3, I/O5 = 1?
YES
Read I/O7 - I/O0
Twice
Toggle Bit =
Toggle?
NO
NO
YES
Program/Erase
Operation
Successful,
Device in
Read Mode
1. The system should recheck the toggle bit even if
I/O5 = “1” because the toggle bit may stop toggling
as I/O5 changes to “1”.
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Note:
Program/Erase
Operation
Successful,
Write Product ID
Exit Command
1. The system should recheck the toggle bit even if
I/O5 = “1” because the toggle bit may stop toggling
as I/O5 changes to “1”.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Status Bit Table
Status Bit
I/O7
I/O7
I/O6
I/O5(1)
I/O3(2)
I/O2
RDY/BUSY
00
01
00/01
00/01
00/01
00/01
00/01
I/O7
0
TOGGLE
0
0
1
0
Erasing
0
0
TOGGLE
0
0
TOGGLE
0
Erase Suspended & Read
Erasing Sector
1
1
1
0
0
TOGGLE
1
Erase Suspended & Read
Non-erasing Sector
DATA
DATA
DATA
DATA
DATA
DATA
1
Erase Suspended &
Program Non-erasing Sector
I/O7
0
TOGGLE
0
0
TOGGLE
0
Erase Suspended &
Program Suspended and
Reading from Nonsuspended Sectors
DATA
DATA
DATA
DATA
DATA
DATA
1
Program Suspended & Read
Programming Sector
I/O7
1
1
0
0
TOGGLE
1
Program Suspended & Read
Non-programming Sector
DATA
DATA
DATA
DATA
DATA
DATA
1
Configuration Register
Programming
Notes:
1. I/O5 switches to a “1” when a program or an erase operation has exceeded the maximum time limits or when a program or
sector erase operation is performed on a protected sector.
2. I/O3 switches to a “1” when the VPP level is not high enough to successfully perform program and erase operations.
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Command Definition in Hex(1)
Command
Sequence
1st Bus
Cycle
2nd Bus
Cycle
Bus
Cycles
Addr
Data
Read
1
Addr
DOUT
Chip Erase
6
555
Sector Erase
6
555
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
AA
AAA(2)
55
555
80
555
AA
AAA
55
555
10
AA
AAA
55
555
80
555
AA
AAA
55
SA(3)(4)
30
Word Program
4
555
AA
AAA
55
555
A0
Addr
DIN
Dual Word Program(9)
5
555
AA
AAA
55
555
E0
Addr1
DIN1
Addr2
DIN2
Enter Single Pulse
Program Mode
6
555
AA
AAA
55
555
80
555
AA
AAA
55
555
A0
Single Pulse Word
Program
1
Addr
DIN
Sector Lockdown
6
555
AA
AAA(2)
55
555
80
555
AA
AAA
55
SA(3)(4)
60
Erase/Program
Suspend
1
XXX
B0
Erase/Program
Resume
1
XXX
30
Product ID Entry
3
555
AA
AAA
55
555
90
Product ID Exit(5)
3
555
AA
AAA
55
555
F0(8)
Product ID Exit(5)
1
XXX
F0(8)
Program Protection
Register
4
555
AA
AAA
55
555
C0
Addr
DIN
Lock Protection
Register - Block B
4
555
AA
AAA
55
555
C0
080
X0
Status of Block B
Protection
4
555
AA
AAA
55
555
90
80
DOUT(6)
Set Configuration
Register
4
555
AA
AAA
55
555
D0
XXX
00/01(7)
CFI Query
1
X55
98
Notes:
1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). I/O15 - I/O8 are don’t care. The ADDRESS FORMAT shown
for each bus cycle is as follows: A11 - A0 (Hex). Address A19 through A11 are don’t care.
2. Since A11 is a Don’t Care, AAA can be replaced with 2AA.
3. SA = sector address. Any word address within a sector can be used to designate the sector address (see pages 16 - 18 for details).
4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power cycled.
5. Either one of the Product ID Exit commands can be used.
6. If data bit D1 is “0”, block B is locked. If data bit D1 is “1”, block B can be reprogrammed.
7. The default state (after power-up) of the configuration register is “00”.
8. Bytes of data other than F0 may be used to exit the Product ID mode. However, it is recommended that F0 be used.
9. This fast programming option enables the user to program two words in parallel only when VPP = 12V. The Addresses, Addr1 and Addr2, of
the two words, DIN1 and DIN2, must only differ in address A0. This command should be used during manufacturing purposes only.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Voltage on VPP
with Respect to Ground ...................................-0.6V to +13.0V
14
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Protection Register Addressing Table
Word
Use
Block
A7
A6
A5
A4
A3
A2
A1
A0
0
Factory
A
1
0
0
0
0
0
0
1
1
Factory
A
1
0
0
0
0
0
1
0
2
Factory
A
1
0
0
0
0
0
1
1
3
Factory
A
1
0
0
0
0
1
0
0
4
User
B
1
0
0
0
0
1
0
1
5
User
B
1
0
0
0
0
1
1
0
6
User
B
1
0
0
0
0
1
1
1
7
User
B
1
0
0
0
1
0
0
0
Note:
All address lines not specified in the above table must be “0” when accessing the protection register, i.e., A19 - A8 = 0.
15
3361A–STKD–6/03
AT52BR1662A/1664A – Sector Address Table
x16
Sector
Size (Words)
Address Range (A19 - A0)
SA0
4K
00000 - 00FFF
SA1
4K
01000 - 01FFF
SA2
4K
02000 - 02FFF
SA3
4K
03000 - 03FFF
SA4
4K
04000 - 04FFF
SA5
4K
05000 - 05FFF
SA6
4K
06000 - 06FFF
SA7
4K
07000 - 07FFF
SA8
32K
08000 - 0FFFF
SA9
32K
10000 - 17FFF
SA10
32K
18000 - 1FFFF
SA11
32K
20000 - 27FFF
SA12
32K
28000 - 2FFFF
SA13
32K
30000 - 37FFF
SA14
32K
38000 - 3FFFF
SA15
32K
40000 - 47FFF
SA16
32K
48000 - 4FFFF
SA17
32K
50000 - 57FFF
SA18
32K
58000 - 5FFFF
SA19
32K
60000 - 67FFF
SA20
32K
68000 - 6FFFF
SA21
32K
70000 - 77FFF
SA22
32K
78000 - 7FFFF
SA23
32K
80000 - 87FFF
SA24
32K
88000 - 8FFFF
SA25
32K
90000 - 97FFF
SA26
32K
98000 - 9FFFF
SA27
32K
A0000 - A7FFF
SA28
32K
A8000 - AFFFF
SA29
32K
B0000 - B7FFF
SA30
32K
B8000 - BFFFF
SA31
32K
C0000 - C7FFF
SA32
32K
C8000 - CFFFF
SA33
32K
D0000 - D7FFF
SA34
32K
D8000 - DFFFF
SA35
32K
E0000 - E7FFF
SA36
32K
E8000 - EFFFF
SA37
32K
F0000 - F7FFF
SA38
32K
F8000 - FFFFF
16
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
AT52BR1662AT/1664AT – Sector Address Table
Size (Words)
x16
Address Range (A19 - A0)
SA0
32K
00000 - 07FFF
SA1
32K
08000 - 0FFFF
SA2
32K
10000 - 17FFF
SA3
32K
18000 - 1FFFF
SA4
32K
20000 - 27FFF
SA5
32K
28000 - 2FFFF
SA6
32K
30000 - 37FFF
SA7
32K
38000 - 3FFFF
SA8
32K
40000 - 47FFF
SA9
32K
48000 - 4FFFF
SA10
32K
50000 - 57FFF
SA11
32K
58000 - 5FFFF
SA12
32K
60000 - 67FFF
SA13
32K
68000 - 6FFFF
SA14
32K
70000 - 77FFF
SA15
32K
78000 - 7FFFF
SA16
32K
80000 - 87FFF
SA17
32K
88000 - 8FFFF
SA18
32K
90000 - 97FFF
SA19
32K
98000 - 9FFFF
SA20
32K
A0000 - A7FFF
SA21
32K
A8000 - AFFFF
SA22
32K
B0000 - B7FFF
SA23
32K
B8000 - BFFFF
SA24
32K
C0000 - C7FFF
SA25
32K
C8000 - CFFFF
SA26
32K
D0000 - D7FFF
SA27
32K
D8000 - DFFFF
SA28
32K
E0000 - E7FFF
SA29
32K
E8000 - EFFFF
SA30
32K
F0000 - F7FFF
SA31
4K
F8000 - F8FFF
SA32
4K
F9000 - F9FFF
SA33
4K
FA000 - FAFFF
Sector
SA34
4K
FB000 - FBFFF
SA35
4K
FC000 - FCFFF
SA36
4K
FD000 - FDFFF
SA37
4K
FE000 - FEFFF
SA38
4K
FF000 - FFFFF
17
3361A–STKD–6/03
DC and AC Operating Range
Operating
Temperature (Case)
Ind.
VCC Power Supply
16-Mbit Flash-70
16-Mbit Flash-90
-40°C - 85°C
-40°C - 85°C
2.70V to 3.3V
2.70V to 3.3V
Operating Modes
Mode
Read
Program/Erase
(2)
Standby/Program Inhibit
CE
OE
WE
RESET
VPP
VIL
VIL
VIH
VIH
X
VIL
VIH
(1)
VIL
VIH
VIHPP
(6)
VIH
X
X
VIH
X
X
X
VIH
VIH
X
X
VIL
X
VIH
X
X
X
X
VIH
VILPP(7)
Output Disable
X
VIH
X
VIH
X
Reset
X
X
X
VIL
X
VIL
VIL
VIH
VIH
Program Inhibit
Ai
I/O
Ai
DOUT
Ai
DIN
X
High-Z
High-Z
X
High-Z
Product Identification
Hardware
Software(5)
Notes:
18
1.
2.
3.
4.
5.
6.
7.
VIH
A1 - A19 = VIL, A9 = VH(3), A0 = VIL
Manufacturer Code(4)
A1 - A19 = VIL, A9 = VH(3), A0 = VIH
Device Code(4)
A0 = VIL, A1 - A19 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A19 = VIL
Device Code(4)
X can be VIL or VIH.
Refer to AC programming waveforms on page 23.
VH = 12.0V ± 0.5V.
Manufacturer Code: 001FH, Device Code: 00C0H – Bottom Boot, 00C2H, Top Boot.
See details under “Software Product Identification Entry/Exit” on page 25.
VIHPP (min) = 0.9V; VIHPP (max) = 3.6V.
VILPP (max) = 0.4V.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC
2
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB
VCC Standby Current CMOS
CE = VCC - 0.3V to
VCC
13
25
µA
ICC (1)
VCC Active Read Current
f = 5 MHz; IOUT = 0
mA
12
25
mA
ICC1
VCC Programming Current
40
mA
IPP1
VPP Input Load Current
5
µA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL1
Output Low Voltage
IOL = 2.1 mA
0.45
V
VOL2
Output Low Voltage
IOL = 1.0 mA
0.20
V
VOH1
Output High Voltage
IOH = -400 µA
2.4
V
VOH2
Output High Voltage
IOH = -100 µA
2.5
V
Note:
Min
Typ
2.0
V
1. In the erase mode, ICC is 45 mA.
19
3361A–STKD–6/03
AC Read Characteristics
16-Mbit Flash-70
Symbol
Parameter
tRC
Read Cycle Time
tACC
Min
16-Mbit Flash-90
Max
Min
Max
Units
70
90
ns
Address to Output Delay
70
90
ns
tCE(1)
CE to Output Delay
70
90
ns
tOE(2)
OE to Output Delay
0
20
0
20
ns
tDF(3)(4)
CE or OE to Output Float
0
25
0
25
ns
tOH
Output Hold from OE, CE or Address,
whichever occurred first
0
tRO
RESET to Output Delay
0
100
ns
100
ns
AC Read Waveforms(1)(2)(3)(4)
tRC
ADDRESS
ADDRESS VALID
CE
tCE
tOE
OE
tDF
tOH
tACC
tRO
RESET
OUTPUT
Notes:
20
HIGH Z
OUTPUT
VALID
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Input Test Waveforms and Measurement Level
tR, tF < 5 ns
Output Test Load
2.8V = V
TM
1029 Ohm
1728 Ohm
CL
(1)
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
CIN
COUT
Note:
Typ
Max
Units
Conditions
4
6
pF
VIN = 0V
8
12
pF
VOUT = 0V
This parameter is characterized and is not 100% tested.
21
3361A–STKD–6/03
AC Word Load Characteristics
Symbol
Parameter
Min
Max
Units
tAS, tOES
Address, OE Setup Time
0
ns
tAH
Address Hold Time
35
ns
tCS
Chip Select Setup Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
35
ns
tDS
Data Setup Time
35
ns
tDH, tOEH
Data, OE Hold Time
0
ns
tWPH
Write Pulse Width High
35
ns
AC Word Load Waveforms
WE Controlled
CE Controlled
22
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Program Cycle Characteristics
Symbol
Parameter
Min
tBP
Word Programming Time
Typ
Max
Units
12
200
µs
6
100
tBPD
Word Programming Time in Dual Programming Mode
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
35
ns
tDS
Data Setup Time
35
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
35
ns
tWPH
Write Pulse Width High
35
ns
tWC
Write Cycle Time
70
ns
500
µs
tRP
Reset Pulse Width
tEC
Chip Erase Cycle Time
25
ns
tSEC1
Sector Erase Cycle Time (4K Word Sectors)
0.3
3.0
seconds
tSEC2
Sector Erase Cycle Time (32K Word Sectors)
1.0
5.0
seconds
tES
Erase Suspend Time
15
µs
tPS
Program Suspend Time
10
µs
seconds
Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
tWP
tBP
tWPH
WE
tAS
tAH
A0 - A19
tDH
555
555
AAA
tWC
555
ADDRESS
tDS
DATA
55
AA
INPUT
DATA
A0
AA
Sector or Chip Erase Cycle Waveforms
OE
(1)
CE
tWP
tWPH
WE
tAS
A0-A19
tAH
Notes:
555
555
AAA
tWC
DATA
tDH
555
Note 2
AAA
tEC
tDS
AA
55
80
AA
55
Note 3
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
(See note 3 under “Command Definitions in Hex” on page 14.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
23
3361A–STKD–6/03
Data Polling Characteristics(1)
Symbol
Parameter
Min
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
Max
(2)
tOE
tWR
Notes:
Typ
OE to Output Delay
Units
ns
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 20.
0
ns
Data Polling Waveforms
WE
CE
tOEH
OE
tDH
tOE
A0-A19
tWR
HIGH Z
I/O7
An
An
An
An
An
Toggle Bit Characteristics(1)
Symbol
Parameter
Min
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay(2)
tOEHP
OE High Pulse
tWR
Notes:
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 20.
Typ
Max
Units
ns
50
ns
0
ns
Toggle Bit Waveforms(1)(2)(3)
Notes:
24
1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Software Product Identification Entry(1)
Sector Lockdown Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 80
TO
ADDRESS 555
LOAD DATA 90
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)
LOAD DATA 55
TO
ADDRESS AAA
Software Product Identification Exit(1)(6)
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA 55
TO
ADDRESS AAA
OR
LOAD DATA F0
TO
ANY ADDRESS
LOAD DATA 60
TO
SECTOR ADDRESS
EXIT PRODUCT
IDENTIFICATION
MODE(4)
PAUSE 200 µs(2)
LOAD DATA F0
TO
ADDRESS 555
EXIT PRODUCT
IDENTIFICATION
MODE(4)
Notes:
Notes:
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
Address Format: A11 - A0 (Hex), and A11 - A19 (Don’t
Care).
2. Sector Lockdown feature enabled.
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
Address Format: A11 - A0 (Hex), and A11 - A19 (Don’t
Care).
2. A1 - A19 = VIL. Manufacturer Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3. The device does not remain in identification mode if powered
down.
4. The device returns to standard operation mode.
5. Manufacturer Code: 001FH(x16)
Device Code: 00C0H (x16) - Bottom Boot;
00C2H (x16) - Top Boot.
6. Either one of the Product ID Exit commands can be used.
25
3361A–STKD–6/03
2-megabit
SRAM
Description
The 2-megabit SRAM is a high-speed, super low-power CMOS SRAM organized as 128K
words by 16 bits. The SRAM uses high-performance full CMOS process technology and is
designed for high-speed and low-power circuit technology. It is particularly well-suited for the
high-density low-power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
Features
• Fully Static Operation and Tri-state Output
• TTL Compatible Inputs and Outputs
• Battery Backup
– 1.2V (Min) Data Retention
Voltage (V)
Speed (ns)
Operation
Current/ICC (mA)
(Max)
2.7 - 3.3
70
1
Standby
Current (µA)
(Max)
Temperature
(° C)
10
-40 - 85
Block Diagram
ROW DECODER
A0
MEMORY ARRAY
512K X 16
WRITE DRIVER
COLUMN
DECODER
DATA I/O BUFFER
SENSE AMP
BLOCK
DECODER
PRE DECODER
ADD INPUT BUFFER
A16
I/O0
I/O7
I/O8
I/O15
SCS1
SCS2
SOE
SLB
SUB
SWE
26
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Absolute Maximum Ratings(1)
Symbol
Parameter
Rating
Unit
VIN, VOUT
Input/Output Voltage
-0.3 to 3.6
V
VCC
Power Supply
-0.3 to 3.6
V
TA
Operating Temperature
-40 to 85
°C
TSTG
Storage Temperature
-55 to 150
°C
1.0
W
PD
Power Dissipation
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
stress rating only and the functional operation of the device under these or any other conditions above those indicated in the
operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may
affect reliability.
Truth Table
I/O Pin
SCS1
SCS2
(1)
X
(1)
X
L
X
X
H
L(1)
H
L
H
L
H
Notes:
SWE
SOE
X
X
H
L
H
H
X
L
SLB(2)
SUB(2)
X
X
Mode
I/O0 - I/O7
I/O8 - I/O15
Power
Deselected
High-Z
High-Z
Standby
Output Disabled
High-Z
High-Z
Active
DIN
High-Z
High-Z
DIN
H
H
L
H
H
L
L
L
L
H
H
L
L
L
DIN
DIN
L
H
DOUT
High-Z
H
L
High-Z
DOUT
L
L
DOUT
DOUT
Write
Read
Active
Active
1. H = VIH, L = VIL, X = Don't Care (VIL or VIH)
2. SUB, SLB (Upper, Lower Byte Enable). These active LOW inputs allow individual bytes to be written or read. When SLB is
LOW, data is written or read to the lower byte, I/O0 - I/O8. When SUB is LOW, data is written or read to the upper byte, I/O9
- I/O16.
Recommended DC Operating Condition
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply Voltage
2.7
3.0
3.3
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage
VCC + 0.3
V
0.6
V
VIL
(1)
Note:
Input Low Voltage
2.2
(1)
-0.3
1. Undershoot: VIL = -1.5V for pulse width less than 30 ns. Undershoot is sampled, not 100% tested.
27
3361A–STKD–6/03
DC Electrical Characteristics
TA = -40° C to 85° C
Symbol
Parameter
Test Condition
Min
ILI
Input Leakage Current
VSS < VIN < VCC
ILO
Output Leakage Current
VSS < VOUT < VCC,
SCS1 = VIH or SCS2=VIL or
SOE = VIH or SWE = VIL or
SUB = VIH, SLB = VIH
ICC
Operating Power Supply Current
ICC1
Average Operating Current
Max
Unit
-1
1
µA
-1
1
µA
SCS1 = VIL, SCS2=VIH,
VIN = VIH or VIL, II/O = 0 mA
1
mA
Cycle Time = 1 µs
II/O = 0 mA,
SCS1 = 0.2V, SCS2 = VCC -0.2V,
VIN ≤0.2V or VIN ≥ VCC - 0.2V
2
mA
Cycle Time = Min,
100% Duty, II/O = 0 mA
SCS1 = VIL, SCS2 = VIH,
VIN = VIH or VIL
15
mA
0.3
mA
10
µA
0.4
V
ISB
Standby Current (TTL Input)
SCS1 = VIH or SCS2 = VIL
ISB1
Standby Current (CMOS Input)
SCS1 ≥ VCC - 0.2V
or
SCS2 ≤VSS + 0.2V
VOL
Output Low
IOL = 2.1 mA
VOH
Output High
IOH = -1.0 mA
Note:
Typ(1)
LL
0.2
2.0
V
1. Typical values are at VCC = 3.0V, TA = 25° C. Typical values are not 100% tested.
Capacitance(1)
(Temp = 25° C, f = 1.0 MHz)
Symbol
Parameter
CIN
COUT
Note:
28
Condition
Max
Unit
Input Capacitance (Add, SCS1,
SCS2, SLB, SUB, SWE, SOE)
VIN = 0 V
8
pF
Output Capacitance (I/O)
VI/O = 0 V
10
pF
1. These parameters are sampled and not 100% tested.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
AC Characteristics
TA = -40° C to 85° C, Unless Otherwise Specified
70 ns
#
Symbol
Parameter
Min
Max
1
tRC
Read Cycle Time
2
tAA
Address Access Time
70
ns
3
tACS
Chip Select Access Time
70
ns
4
tOE
Output Enable to Output Valid
35
ns
5
tBA
SLB, SUB Access Time
35
ns
6
tCLZ
Chip Select to Output in Low Z
10
ns
7
tOLZ
Output Enable to Output in Low Z
5
ns
8
tBLZ
SLB, SUB Enable to Output in Low Z
10
ns
9
tCHZ
Chip Deselection to Output in High Z
0
25
ns
10
tOHZ
Out Disable to Output in High Z
0
25
ns
11
tBHZ
SLB, SUB Disable to Output in High Z
0
25
ns
12
tOH
Output Hold from Address Change
10
ns
13
tWC
Write Cycle Time
70
ns
14
tCW
Chip Selection to End of Write
60
ns
15
tAW
Address Valid to End of Write
60
ns
16
tBW
SLB, SUB Valid to End of Write
60
ns
17
tAS
Address Setup Time
0
ns
18
tWP
Write Pulse Width
50
ns
19
tWR
Write Recovery Time
0
ns
20
tWHZ
Write to Output in High Z
0
21
tDW
Data to Write Time Overlap
30
ns
22
tDH
Data Hold from Write Time
0
ns
23
tOW
Output Active from End of Write
5
ns
70
Unit
ns
20
ns
AC Test Conditions
TA = -40° C to 85° C, Unless Otherwise Specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5 ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW
CL = 5 pF + 1 TTL Load
Others
CL = 30 pF + 1 TTL Load
29
3361A–STKD–6/03
Output Test Load
2.8V = V
TM
1029 Ohm
(1)
1728 Ohm
Note:
CL
1. Including jig and scope capacitance.
Timing Diagrams
Read Cycle 1(1),(4)
tRC
ADDRESS
tAA
tOH
tACS
SCS1
SCS2
tCHZ(3)
tBA
SUB, SLB
tBHZ(3)
tOE
SOE
tOLZ(3)
tOHZ (3)
tBLZ(3)
DATA OUT
HIGH-Z
tCLZ(3)
DATA VALID
Read Cycle 2(1),(2),(4)
tRC
ADDRESS
tAA
tOH
tOH
DATA OUT
PREVIOUS DATA
DATA VALID
Read Cycle 3(1),(2),(4)
SCS1
SUB, SLB
SCS2
tACS
tCLZ (3)
DATA OUT
Notes:
30
tCHZ (3)
DATA VALID
1. Read Cycle occurs whenever a high on the SWE and SOE is low, while SUB and/or SLB and SCS1 and SCS2 are in active
status.
2. SOE = VIL.
3. Transition is measured ± 200 mV from steady state voltage. This parameter is sampled and not 100% tested.
4. SCS1 in high for the standby, low for active. SCS2 in low for the standby, high for active. SUB and SLB in high for the
standby, low for active.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Write Cycle 1 (SWE Controlled)(1),(4),(8)
tWC
ADDRESS
tWR(2)
tCW
SCS1
SCS2
tAW
tBW
SUB, SLB
tWP
SWE
tAS
DATA IN
tDW
tDH
tAS
HIGH-Z
DATA VALID
tWHZ(3)(7)
tOW
(5)
(5)
DATA OUT
Write Cycle 2 (SCS1, SCS2 Controlled)(1),(4),(8)
tWC
ADDRESS
tWR(2)
tCW
tAS
SCS1
tAW
SCS2
tBW
SUB, SLB
tWP
SWE
tDW
DATA IN
DATA OUT
Notes:
HIGH-Z
tDH
DATA VALID
HIGH-Z
1. A write occurs during the overlap of a low SWE, a low SCS1, a high SCS2 and a low SUB and/or SLB.
2. tWR is measured from the earlier of SCS1, SLB, SUB, or SWE going high or SCS2 going low to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be
applied.
4. If the SCS1, SLB and SUB low transition and SCS2 high transition occur simultaneously with the SWE low transition or after
the SWE transition, outputs remain in a high impedance state.
5. Q (data out) is the same phase with the write data of this write cycle.
6. Q (data out) is the read data of the next address.
7. Transition is measured ± 200 mV from steady state. This parameter is sampled and not 100% tested.
8. SCS1 in high for the standby, low for active SCS2 in low for the standby, high for active. SUB and SLB in high for the standby,
low for active.
31
3361A–STKD–6/03
Data Retention Electric Characteristic
TA = -40° C to 85° C
Symbol
Parameter
Test Condition
Min
VDR
VCC for Data Retention
SCS1 > VCC -0.2V,
SCS2 ≤0.2V or
VCC - 0.2V,
VSS ≤VIN ≤VCC
1.2
ICCDR
Data Retention Current
VCC = 3.0V,
SCS1 > VCC - 0.2V or
SCS2 ≤VSS + 0.2V or
VSS ≤VIN ≤VCC
tCDR
Chip Deselect to Data
Retention Time
tR
Operating Recovery Time
Notes:
Typ
Max
Unit
3.3
V
6
µA
0.1
0
ns
tRC(2)
ns
See Data Retention Timing Diagram
1. Typical values are under the condition of TA = 25° C. Typical values are sampled and not 100% tested.
2. tRC is read cycle time.
Data Retention Timing Diagram 1
DATA RETENTION MODE
VCC
2.3V
tCDR
tR
IH
VDR
SCS1 > VCC - 0.2V
SCS1
VSS
Data Retention Timing Diagram 2
DATA RETENTION MODE
VCC
2.3V
tCDR
tR
SCS2
VDR
0.4V
VSS
32
SCS2 < 0.2V
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
4-megabit
SRAM
Description
The 4-megabit SRAM is a high-speed, super low-power CMOS SRAM organized as 256K
words by 16 bits. The SRAM uses high-performance full CMOS process technology and is
designed for high-speed and low-power circuit technology. It is particularly well-suited for the
high-density low-power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
Features
• Fully Static Operation and Tri-state Output
• TTL Compatible Inputs and Outputs
• Battery Backup
– 1.2V (Min) Data Retention
Voltage (V)
Speed (ns)
Operation
Current/ICC (mA)
(Max)
2.7 - 3.3
70
3
Standby Current
(µA)
(Max)
Temperature
(° C)
10
-40 - 85
Block Diagram
ROW DECODER
A0
MEMORY ARRAY
256K X 16
WRITE DRIVER
COLUMN
DECODER
DATA I/O BUFFER
SENSE AMP
BLOCK
DECODER
PRE DECODER
ADD INPUT BUFFER
A17
I/O0
I/O7
I/O8
I/O15
SCS1
SCS2
SOE
SLB
SUB
SWE
33
3361A–STKD–6/03
Absolute Maximum Ratings(1)
Symbol
Parameter
Rating
Unit
VIN, VOUT
Input/Output Voltage
-0.3 to 3.6
V
VCC
Power Supply
-0.3 to 3.6
V
TA
Operating Temperature
-40 to 85
°C
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
stress rating only and the functional operation of the device under these or any other conditions above those indicated in the
operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may
affect reliability.
Truth Table
I/O Pin
SCS1
SCS2
H(1)
X
(1)
L
X
X
L
SWE
SOE
X
X
X
(1)
H
L
H
H
L
H
SLB(2)
SUB(2)
X
X
H
H
L
H
H
L
L
L
L
H
H
L
H
H
I/O8 - I/O15
Power
Deselected
High-Z
High-Z
Standby
Output Disabled
High-Z
High-Z
Active
DIN
High-Z
High-Z
DIN
DIN
DIN
DIN
High-Z
DOUT
High-Z
High-Z
DOUT
DOUT
DOUT
DOUT
High-Z
Write
L
L
H
H
L
L
Read
L
Notes:
I/O0 - I/O7
X
L
L
Mode
L
Active
Active
1. H = VIH, L = VIL, X = Don't Care (VIL or VIH)
2. SUB, SLB (Upper, Lower Byte Enable). These active LOW inputs allow individual bytes to be written or read. When SLB is
LOW, data is written or read to the lower byte, I/O0 - I/O7. When SUB is LOW, data is written or read to the upper byte, I/O8
- I/O15.
Recommended DC Operating Condition
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply Voltage
2.7
3.0
3.3
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage
VCC + 0.3
V
0.6
V
VIL
(1)
Note:
34
Input Low Voltage
2.2
(1)
-0.3
1. Undershoot: VIL = -1.5V for pulse width less than 30 ns. Undershoot is sampled, not 100% tested.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
DC Electrical Characteristics
TA = -40° C to 85° C
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
VSS < VIN < VCC
-1
1
µA
ILO
Output Leakage Current
VSS < VOUT < VCC,
SCS1 = VIH or SCS2=VIL or
SOE = VIH or SWE = VIL or
SUB = VIH, SLB = VIH
-1
1
µA
ICC
Operating Power Supply Current
SCS1 = VIL, SCS2=VIH,
VIN = VIH or VIL, II/O = 0 mA
2
mA
ICC1
Average Operating Current
SCS1 = VIL, SCS2 = VIH,
VIN = VIH or VIL, Cycle Time = Min
100% Duty, II/O = 0 mA
15
mA
SCS1 < 0.2V, SCS2 > VCC - 0.2V
VIN < 0.2V or VIN > VCC - 0.2V,
Cycle Time = 1 µs
100% Duty, II/O = 0 mA
2
mA
0.3
mA
10
µA
0.4
V
ISB
Standby Current (TTL Input)
SCS1 = VIH or SCS2 = VIL or
SUB, SLB = VIH
VIN = VIH or VIL
ISB1
Standby Current (CMOS Input)
SCS1 > VCC - 0.2V or
SCS2 < VSS + 0.2V or
SUB, SLB > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < VSS + 0.2V
VOL
Output Low
IOL = 2.1 mA
VOH
Output High
IOH = -1.0 mA
LL
2.4
V
Capacitance(1)
(Temp = 25° C, f = 1.0 MHz)
Symbol
Parameter
CIN
COUT
Note:
Condition
Max
Unit
Input Capacitance (Add, SCS1,
SCS2, SLB, SUB, SWE, SOE)
VIN = 0 V
8
pF
Output Capacitance (I/O)
VI/O = 0 V
10
pF
1. These parameters are sampled and not 100% tested.
35
3361A–STKD–6/03
AC Characteristics
TA = -40° C to 85° C, Unless Otherwise Specified
70 ns
#
Symbol
Parameter
Min
Max
1
tRC
Read Cycle Time
2
tAA
Address Access Time
70
ns
3
tACS
Chip Select Access Time
70
ns
4
tOE
Output Enable to Output Valid
35
ns
5
tBA
SLB, SUB Access Time
70
ns
6
tCLZ
Chip Select to Output in Low Z
10
ns
7
tOLZ
Output Enable to Output in Low Z
5
ns
8
tBLZ
SLB, SUB Enable to Output in Low Z
10
ns
9
tCHZ
Chip Deselection to Output in High Z
0
25
ns
10
tOHZ
Out Disable to Output in High Z
0
25
ns
11
tBHZ
SLB, SUB Disable to Output in High Z
0
25
ns
12
tOH
Output Hold from Address Change
10
ns
13
tWC
Write Cycle Time
30
ns
14
tCW
Chip Selection to End of Write
30
ns
15
tAW
Address Valid to End of Write
30
ns
16
tBW
SLB, SUB Valid to End of Write
30
ns
17
tAS
Address Setup Time
0
ns
18
tWP
Write Pulse Width
30
ns
19
tWR
Write Recovery Time
0
ns
20
tWHZ
Write to Output in High Z
0
21
tDW
Data to Write Time Overlap
25
ns
22
tDH
Data Hold from Write Time
0
ns
23
tOW
Output Active from End of Write
5
ns
70
Unit
ns
5
ns
AC Test Conditions
TA = -40° C to 85° C, Unless Otherwise Specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5 ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW
CL = 5 pF + 1 TTL Load
Others
CL = 30 pF + 1 TTL Load
36
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Output Test Load
2.8V = V
TM
1029 Ohm
(1)
1728 Ohm
Note:
CL
1. Including jig and scope capacitance.
Timing Diagrams
Read Cycle 1(1),(4)
tRC
ADDRESS
tAA
tOH
tACS
SCS1
SCS2
tCHZ(3)
tBA
SUB, SLB
tBHZ(3)
tOE
SOE
tOLZ(3)
tOHZ (3)
tBLZ(3)
DATA OUT
HIGH-Z
tCLZ(3)
DATA VALID
Read Cycle 2(1),(2),(4)
tRC
ADDRESS
tAA
tOH
tOH
DATA OUT
PREVIOUS DATA
DATA VALID
Read Cycle 3(1),(2),(4)
SCS1
SUB, SLB
SCS2
DATA OUT
Notes:
tACS
tCLZ (3)
tCHZ (3)
DATA VALID
1. Read Cycle occurs whenever a high on the SWE and SOE is low, while SUB and/or SLB and SCS1 and SCS2 are in active
status.
2. SOE = VIL.
3. Transition is measured ± 200 mV from steady state voltage. This parameter is sampled and not 100% tested.
4. SCS1 in high for the standby, low for active. SCS2 in low for the standby, high for active. SUB and SLB in high for the
standby, low for active.
37
3361A–STKD–6/03
Write Cycle 1 (SWE Controlled)(1),(4),(8)
tWC
ADDRESS
tWR(2)
tCW
SCS1
SCS2
tAW
tBW
SUB, SLB
tWP
SWE
tAS
DATA IN
tDW
tDH
tAS
HIGH-Z
DATA VALID
tWHZ(3)(7)
tOW
(5)
(5)
DATA OUT
Write Cycle 2 (SCS1, SCS2 Controlled)(1),(4),(8)
tWC
ADDRESS
tWR(2)
tCW
tAS
SCS1
tAW
SCS2
tBW
SUB, SLB
tWP
SWE
tDW
DATA IN
DATA OUT
Notes:
38
HIGH-Z
tDH
DATA VALID
HIGH-Z
1. A write occurs during the overlap of a low SWE, a low SCS1, a high SCS2 and a low SUB and/or SLB.
2. tWR is measured from the earlier of SCS1, SLB, SUB, or SWE going high or SCS2 going low to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be
applied.
4. If the SCS1, SLB and SUB low transition and SCS2 high transition occur simultaneously with the SWE low transition or after
the SWE transition, outputs remain in a high impedance state.
5. Q (data out) is the same phase with the write data of this write cycle.
6. Q (data out) is the read data of the next address.
7. Transition is measured ± 200 mV from steady state. This parameter is sampled and not 100% tested.
8. SCS1 in high for the standby, low for active SCS2 in low for the standby, high for active. SUB and SLB in high for the standby,
low for active.
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Data Retention Electric Characteristic
TA = -40° C to 85° C
Symbol
Parameter
Test Condition
Min
VDR
VCC for Data Retention
SCS1 > VCC - 0.2V or
SCS2 < VSS + 0.2V or
SUB, SLB > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < VSS + 0.2V
1.2
ICCDR
Data Retention Current
Vcc=1.5V,
SCS1 > VCC - 0.2V or
SCS2 < VSS + 0.2V or
SUB, SLB > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < VSS + 0.2V
tCDR
Chip Deselect to Data
Retention Time
tR
Note:
Typ(1)
Max
Unit
3.3
V
6
µA
0.2
0
ns
tRC(2)
ns
See Data Retention Timing Diagram
Operating Recovery Time
1. Typical values are under the condition of TA = 25° C. Typical values are sampled and not 100% tested.
2. tRC is read cycle time.
Data Retention Timing Diagram 1
DATA RETENTION MODE
VCC
2.7V
tCDR
tR
IH
VDR
SCS1 > VCC - 0.2V
SCS1
VSS
Data Retention Timing Diagram 2
DATA RETENTION MODE
VCC
2.7V
tCDR
tR
SCS2
VDR
0.4V
VSS
SCS2 < 0.2V
39
3361A–STKD–6/03
Ordering Information
tACC (ns)
Voltage Range
70
2.7V - 3.3V
90
Ordering Code
Boot Block
Package
Operation Range
AT52BR1662AT-70CI
Top
66C5
Industrial
(-40° to 85° C)
2.7V - 3.3V
AT52BR1662AT-90CI
Top
66C5
Industrial
(-40° to 85° C)
70
2.7V - 3.3V
AT52BR1664AT-70CI
Top
66C5
Industrial
(-40° to 85° C)
90
2.7V - 3.3V
AT52BR1664AT-90CI
Top
66C5
Industrial
(-40° to 85° C)
70
2.7V - 3.3V
AT52BR1662A-70CI
Bottom
66C5
Industrial
(-40° to 85° C)
90
2.7V - 3.3V
AT52BR1662A-90CI
Bottom
66C5
Industrial
(-40° to 85° C)
70
2.7V - 3.3V
AT52BR1664A-70CI
Bottom
66C5
Industrial
(-40° to 85° C)
90
2.7V - 3.3V
AT52BR1664A-90CI
Bottom
66C5
Industrial
(-40° to 85° C)
Package Type
66C5
40
66-ball, Plastic Chip-scale Ball Grid Array Package (CBGA)
AT52BR1662A(T)/1664A(T)
3361A–STKD–6/03
AT52BR1662A(T)/1664A(T)
Packaging Information
66C5 – CBGA
0.12 C
E
C Seating Plane
Marked A1 Identifier
D
Side View
A1
Top View
A
0.60 REF
E1
A1 Ball Corner
e
1.20 REF
A
B
C
D
D1
E
COMMON DIMENSIONS
(Unit of Measure = mm)
F
G
H
e
12 11
10
9
8
7
6
5
4
Øb
Bottom View
3
2
1
SYMBOL
MIN
NOM
MAX
E
9.90
10.00
10.10
E1
–
8.80
–
D
7.90
8.00
8.10
D1
–
5.60
–
A
–
–
1.20
A1
0.25
–
–
e
Øb
NOTE
0.80 BSC
–
0.40
–
09/19/01
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
66C5, 66-ball (12 x 8 Array), 10 x 8 x 1.2 mm Body, 0.8 mm Ball
Pitch Chip-scale Ball Grid Array Package (CBGA)
DRAWING NO.
66C5
REV.
A
41
3361A–STKD–6/03
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
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Tel: (852) 2721-9778
Fax: (852) 2722-1369
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Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Atmel Operations
Memory
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Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
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Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
La Chantrerie
BP 70602
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Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
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Tel: 1(719) 576-3300
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Biometrics/Imaging/Hi-Rel MPU/
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Avenue de Rochepleine
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Tel: (33) 4-76-58-30-00
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Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
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Maxwell Building
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Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
e-mail
literature[email protected]
Web Site
http://www.atmel.com
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2003. All rights reserved. Atmel® and combinations thereof are the registered
trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of
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