PD-20381 HFA40HF60 HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 600V (ISOLATED BASE) • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 1.75V Qrr = 290nC CATHODE di(rec)M/dt = 400A/µs ANODE Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. SMD-1 Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 100°C IFSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current Single Pulse Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 22 225 83 -55 to +150 V A W °C Thermal - Mechanical Characteristics Parameter RθJC Junction-to-Case, Single Leg Conducting Weight Typ. Max. Units — 2.4 1.5 — °C/W g Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms www.irf.com 1 6/30/99 HFA40HF60 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Min. Typ. Max. Units Cathode Anode Breakdown Voltage Max Forward Voltage IRM Max Reverse Leakage Current CT LS Junction Capacitance Series Inductance 600 — — — — — — — — — 1.63 1.75 2.07 2.25 1.52 1.64 — 10 — 1.0 56 59 2.8 — V V µA mA pF nH Test Conditions IR = 100µA IF = 22A IF = 45A See Fig. 1 IF = 22A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 480V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Min. Typ. Max. Units Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb — — — — — — — — 60 110 5.2 8.5 190 560 270 170 90 165 7.8 13 290 840 400 250 ns A nC A/µs Test Conditions TJ = 25°C See Fig. TJ = 125°C 5 IF = 22A TJ = 25°C See Fig. TJ = 125°C 6 VR = 200V TJ = 25°C See Fig. TJ = 125°C 7 dif/dt = 200A/µs TJ = 25°C See Fig. TJ = 125°C 8 Legend: 1 - Cathode 2 - N/C 3 - Anode IR Case Style SMD-1 2 www.irf.com HFA40HF60 R ev erse C u rre n t - I R (µ A ) 1000 100 TJ = 1 50°C TJ = 1 25°C 10 1 0.1 TJ = 25°C 0.01 TJ = -55°C 0.001 0.0001 0 10 200 400 600 R e ve rse V o lta g e - V R (V ) Fig. 2 - Typical Reverse Current vs. Reverse Voltage J un ctio n C a pa cita n ce - C T (pF ) Instantane ous Forward C u rrent - I F (A ) 100 1000 T J = 1 50 °C T J = 1 25 °C 1 1.0 2.0 TJ = 25°C 100 T J = 25 °C 0.0 A 3.0 4.0 Forward V olta ge D ro p - V FM (V ) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 1 10 100 1000 R ev ers e V olta ge - VR (V ) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 P DM 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA40HF60 100 150 I F = 44A I F = 22A 120 I F = 44 A I F = 11A I F = 2 2A Irr- ( A) I F = 11 A trr- (nC) 90 10 60 30 VR = 2 0 0 V T J = 1 2 5 °C TJ = 2 5 ° C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 0 100 d i f /d t - (A /µs ) 1 100 1000 1000 d i f /d t - (A /µ s ) Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt 10000 2000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C di (rec) M/dt- (A /µs) 1600 Qrr- (nC) I F = 44 A 1200 I F = 2 2A I F = 1 1A 800 1000 I F = 2 2A I F = 1 1A 400 I F = 4 4A 0 100 di f /dt - (A /µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt 4 100 100 1000 d i f /d t - (A /µ s ) Fig. 8 - Typical di(rec)M/dt vs. dif/dt www.irf.com HFA40HF60 3 t rr IF R E V E R S E R E C O V E R Y C IR C U IT tb ta 0 Q rr VR = 200V 2 I RRM 4 0 .5 I R R M d i(re c)M /d t 0.0 1 Ω 0 .7 5 I R R M L = 7 0µ H D .U .T . d if/d t ADJUST D G 5 IR F P 2 5 0 S Fig. 9 - Reverse Recovery Parameter Test Circuit 1 d i f /d t 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99 www.irf.com 5