HRW0203B Silicon Schottky Barrier Diode for Rectifying ADE-208-1475 (Z) Rev.0 Dec. 2001 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRW0203B S21 MPAK Pin Arrangement 3 2 (Top View) 1 1. Anode 2. NC 3. Cathode HRW0203B Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Repetitive peak reverse voltage VRRM * 1 Average rectified current IO * 2 Value Unit 30 V 200 mA Non-Repetitive peak forward surge current IFSM * 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.1 to Fig.5, with polyimide board. 2. 50 Hz sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.50 V IF = 200 mA Reverse current IR — — 50 µA VR = 30 V Capacitance C — 40 — pF VR = 0 V, f = 1 MHz Rev.0, Dec. 2001, page 2 of 6 HRW0203B Main Characteristic 1.0 Tj = 25°C Tj = 125°C Reverse current IR (A) 10–1 10–2 10–3 0 0.2 0.4 0.6 0.8 10–3 10–4 1.0 102 10 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 0.40 0A t T 0.15 t D= — T D=1/6 Tj = 25°C D=1/3 Sin(θ=180°) D=1/2 DC 0.10 0.05 0 0 0.05 0.10 0.15 0.20 Reverse power dissipation Pd (W) 0.20 Forward power dissipation Pd (W) Forward current IF (A) 10–2 0V D=5/6 t 0.30 T t D= — T D=2/3 Tj = 125°C D=1/2 0.20 Sin(θ=180°) 0.10 0 0 5 10 15 20 25 30 Forward current IF (A) Reverse voltage VR (V) Fig3. Forward power dissipation vs. Forward current Fig4. Reverse power dissipation vs. Reverse voltage Rev.0, Dec. 2001, page 3 of 6 HRW0203B Main Characteristic (cont) 20h×15w×0.8t 0.25 t T D= t T 1.5 VR=VRRM/2, Tj=125°C 1.5 0.20 1.5 0.15 Unit: mm Rth=360°C/W 0.10 D=1/3 D=1/6 0.05 0 0.8 0V 0 3.0 Average rectified current IO (A) 0.30 0 25 50 DC 75 sin D=1/2 100 125 150 Ambient temperature Ta (°C) Fig.5 Average rectified current vs. Ambient temperature f=1MHz Pulse test Capacitance C (pF) 102 10 1.0 0.1 1.0 10 Reverse voltage VR (V) Fig.6 Capacitance vs. Reverse voltage Rev.0, Dec. 2001, page 4 of 6 HRW0203B Package Dimensions As of July, 2001 2.8 + 0.2 – 0.6 1.5 ± 0.15 0.3 2.8 +– 0.1 (0.65) 1.9 ± 0.2 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 + 0.2 1.1 – 0.1 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) MPAK — Conforms 0.011 g Rev.0, Dec. 2001, page 5 of 6 HRW0203B Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Dec. 2001, page 6 of 6