The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 June 2001 INCH POUND MIL-PRF-19500/317J 9 March 2001 SUPERSEDING MIL-PRF-19500/317H 8 September 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N4449U, 2N2369AUA, 2N3227UA, 2N4449UA, 2N2369AUB, 2N3227UB, and 2N4449UB JAN JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching transistors (including dual devices). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. Figure 1 (TO-18) for 2N2369A and 2N3227, figure 2 (TO-46) for 2N4449, figure 3 for UB version, figure 4 for UA version, figure 5 for U version (dual devices), and figure 6 and 7 (JANC). 1.3 Maximum ratings. PT TA = +25°C VCBO VEBO VCEO VCES RθJA TOP & TSTG W V dc V dc V dc V dc °C/W °C 2N2369A 2N3227 2N4449 0.36 (1) 0.36 (1) 0.36 (1) 40 40 40 4.5 6.0 4.5 15 20 15 40 40 40 325 325 325 -65 to +200 All UA All UB All U 0.5 (2) 0.4 (3) 0.5 (4) Types (1) (2) (3) (4) Derate linearly 2.06 mW/°C above TA Derate linearly 4.76 mW/°C above TC Derate linearly 3.08 mW/°C above TC Derate linearly 3.44 mW/°C above TA 210 325 291 = +25°C. = +95°C. = +70°C. = +54.5°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, Post Office Box 3990, Columbus, OH 43213-1999, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/317J 1.4 Primary electrical characteristics. Type hFE2 (1) VCE = 0.4 V dc IC = 30 mA dc Min Max 2N2369A 30 120 2N3227 40 250 2N4449 30 120 (1) Pulsed (see 4.5.1). hFE4 (1) VCE = 1.0 V dc IC = 100 mA dc Min Max 20 120 30 150 20 120 hFE VCE = 10 V dc IC = 10 mA dc f = 100 MHz Min Max 5.0 10 5.0 10 5.0 10 VCE(sat)1 IC = 10 mA dc IB = 1 mA dc ton IC = 10 mA dc IB1 = 3 mA dc IB2 = -1.5 mA dc V dc 0.20 0.20 0.20 ns 12 12 12 toff IC = 10 mA dc IB1 = 3 mA dc IB2 = -1.5 mA dc ns 18 25 18 ts ns 13 18 13 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Performance Specification Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 2 MIL-PRF-19500/317J Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 --.050 --1.27 .250 --6.35 ----.030 --0.76 .028 .048 0.71 1.22 .036 .046 0.91 1.17 --.010 --0.25 45° TP 45° TP Notes TO-18 6 7,8 7,8,13 7,8 7,8 7,8 5 3,4 3 10 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions TO-18 2N2369A and 2N3227. 3 MIL-PRF-19500/317J Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .065 .085 1.65 2.16 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 1.750 12.70 44.45 .016 .019 0.41 0.48 --.050 --1.27 .250 --6.35 ----.040 --1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 --.010 --0.25 45° TP 45° TP Notes TO-46 5 6 6 6 6 3 8 4 9 5 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. Metric equivalents are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. 6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions – TO-46 2N4449. 4 MIL-PRF-19500/317J UB Dimensions Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 --.022 .022 Millimeters Min Max 0.97 1.42 0.43 0.89 0.41 0.61 0.41 0.61 0.41 0.61 2.41 2.74 1.81 2.01 0.89 0.99 2.41 2.74 2.82 3.25 --3.25 0.56 0.96 0.56 0.96 Max .056 .035 .024 .024 .024 .108 .079 .039 .108 .128 .128 .038 .038 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 3. Physical dimensions - surface mount (UB version). 5 MIL-PRF-19500/317J UA Symbol BL BL2 BW BW2 CH L3 LH LL1 LL2 LS LW LW2 Pin no. Transistor Dimensions Inches Millimeters Min Max Min Max .215 .225 5.46 5.71 .225 5.71 .145 .155 3.68 3.93 .155 3.93 .061 .075 1.55 1.90 .003 .007 0.08 0.18 .029 .042 0.74 1.04 .032 .048 0.81 1.22 .072 .088 1.83 2.23 .045 .055 1.14 1.39 .022 .028 0.56 0.71 .006 .022 0.15 0.56 1 Collector 2 Emiiter 3 Base 4 N/C NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. FIGURE 4. Physical dimensions – surface mount (UA versions). 6 MIL-PRF-19500/317J U Dimensions Symbol BL BL2 BW BW2 CH L3 LH LL1 LL2 LS1 LS2 LW LW2 Pin No. Transistor 1 Collector no. 1 Inches Min .240 .165 .066 .003 .026 .060 .082 .095 .045 .022 .006 2 Base no. 1 Millimeters Min Max 6.10 6.35 6.35 4.19 4.44 4.44 1.68 2.03 0.08 0.18 0.66 0.86 1.52 1.78 2.08 2.49 2.41 2.67 1.14 1.39 0.56 0.71 0.15 0.56 Max .250 .250 .175 .175 .080 .007 .034 .070 .098 .105 .055 .028 .022 3 Base no. 2 4 Collector no. 2 5 Emitter no. 2 6 Emitter no. 1 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers. FIGURE 5. Physical dimensions - surface mounted dual devices (U version). 7 MIL-PRF-19500/317J 1. 2. 3. 4. Chip size: Chip thickness: Top metal: Back metal: 5. Backside: 6. Bonding pad: 20 x 20 mils ± 2 mils. 10 ± 1.5 mils nominal. Aluminum 10,000Å minimum, 12,000Å nominal. a. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅ min.,15kÅ/5kÅ/10kÅ/10kÅ nominal. b. Gold 2,500Å minimum, 3,000Å nominal. c. Eutectic Mount – No Gold. Collector. B = 4 x 4.5 mils, E = 4.5 x 5 mils. FIGURE 6. JANHC and JANKC A-version die dimensions - 2N2369A. 8 MIL-PRF-19500/317J E Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Back side: Glassivation: B 0.016 inch x 0.016 inch (0.4064 mm x 0.4064 mm). 0.008 inch ± 0.0016 inch (0.2032 mm ±0.4064 mm). 0.0036 inch x 0.0028 inch (0.09144 mm x 0.07112 mm). 0.0036 inch x 0.0028 inch. Gold, 6500 ± 1950 Ang. Aluminum, 17500 ± 2500 Ang. Collector. SiO2, 7500 ± 1500 Ang. FIGURE 7. JANHC and JANKC B-version die dimensions - 2N2369A, 2N3227. 9 MIL-PRF-19500/317J 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I herein. When a particular device is specified, the limit applies to all package types (e.g., 2N2369A, 2N2369AU, 2N2369AUA, and 2N2369AUB). 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in paragraphs table I herein. When a particular device is specified, the limit applies to all package types (e.g., 2N2369A, 2N2369AU, 2N2369AUA, and 2N2369AUB). 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV and JANS can be abbreviated as J, JX, JV and JS respectively. The "2N" prefix and the "AUB" suffix may also be omitted. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table VI of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. 10 MIL-PRF-19500/317J Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3c Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 9 ICES and hFE3 Not applicable 11 ICES; hFE3; ∆ICES = 100 percent of initial value or 25 nA dc, whichever is greater. ∆hFE3 = ±15 percent of initial value. See 4.3.1 240 hours minimum Subgroups 2 and 3 of table I herein; ∆ICES = 100 percent of initial value or 25 nA dc, whichever is greater; ∆hFE3 = ±15 percent of initial value. ICES, hFE3 12 13 See 4.3.1 80 hours minimum Subgroup 2 of table I herein; ∆ICES = 100 percent of initial value or 25 nA dc, whichever is greater; ∆hFE3 = ±15 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCE = 5 - 15 Vdc, Pd= 360 mW, TA = room ambient as defined in 4.5 of MIL-STD-750. 4.3.2. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements 4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with method 3131 of MIL-STD-750. a. IM measurement current -----------------5 mA. b. IH forward heating current --------------50 mA (min). c. tH heating time -----------------------------25 - 30 ms. d. tmd measurement delay time ----------60 µs max. e. VCE collector-emitter voltage ----------10 V dc minimum. The maximum limit for ZθJX under these test conditions is ZθJX (max) = 75°C/W, except the maximum limit for U package is ZθJX (max) = 175°C/W per side. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (endpoints) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.3 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 herein. Delta measurements shall be in accordance with 4.5.3 herein. 11 MIL-PRF-19500/317J 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 12 V dc B5 1027 VCB = 12 V dc. PD ≥ 100 percent of maximum rated PT (see 1.3). Option 1: 96 hrs min, sample size in accordance with table Via of MIL-PRF-19500, adjust TA to achieve Tj = +275°C minimum. Option 2: 216 hrs min., sample size = 45, c = 0; adjust TA to achieve Tj = +225°C minimum. (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV) Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double the sample size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 5 - 15 V dc. n = 45, c = 0. Maximum rated power (see 1.3) shall be applied to the device and ambient temperature shall be adjusted to achieve TJ ≥ 150°C. 2 1039 The steady state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), TA = +200°C. n = 22, c = 0. Step 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.3 herein. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Step Method C2 2036 C6 1026 Condition Test condition E; not applicable for U, UA and UB devices. 1,000 hours at VCB = 5 - 15 V dc. n = 45, c= 0. Maximum rated power (see 1.3) shall be applied to the device and ambient temperature shall be adjusted to achieve TJ ≥ 150°C. 12 MIL-PRF-19500/317J 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Step Method Condition C2 2036 C6 Not applicable. Test condition E. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except the output capacitor shall be omitted. 4.5.3 Delta requirements. Delta requirements shall be as specified below: Test Inspection 1/ 2/ 3/ Method 3076 1. Forward-current transfer ratio 2. Collector - emitter and resistance 3071 3. Collector - emitter cutoff current 3041 MIL-STD-750 Conditions VCE = 1.0 V dc; IC = 10 mA dc; pulsed (see 4.5.1) Symbol Limit ∆hFE3 ±25 percent change from initial value. IC = 10 mA dc; IB = 1.0 mA dc ∆VCE(sat) ±50 mV change from previous measured value. Bias condition C; VCE = 20 V dc; ∆ICES1 100 percent of initial value or 25 nA dc, whichever is greater. 1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: Subgroups B4 and B5: tests 1, 2 and 3. 2/ The electrical measurements (JAN, JANTX and JANTXV) of 4.4.2.2 herein are as follows: Steps 1, 2 and 3: tests 1 and 3. 3/ The electrical measurements for table VII and 4.4.3.1 of MIL-PRF-19500 are as follows: Subgroup 6, see 4.5.3 herein, steps 2 and 3 (for JANS). 13 MIL-PRF-19500/317J TABLE I. Group A inspection Inspection 1/ Method MIL-STD-750 Conditions Symbol Min Limit Max Unit Subgroup 1 2/ Visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Group A, subgroup 2 Electrical measurements 4/ Bond strength 3/ 4/ 2037 Precondition TA = +250°C at t = 24 hrs or TA = 300°C at t = 2 hrs n = 11 wires, c = 0 Breakdown voltage, collector to base 3036 VCB = 40 V dc Breakdown voltage, emitter to base 2N2369A, 2N4449 2N3227 3026 Breakdown voltage, collector to emitter 2N2369A, 2N4449 2N3227 3011 Collector to emitter cutoff current 3041 Bias condition C; VCE = 20 V dc ICES 0.4 µA dc Collector to base cutoff current 3036 Bias condition D; VCB = 32 V dc ICBO2 0.2 µA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc IEBO2 hFE1 0.25 µA dc Forward-current transfer ratio 3076 VCE = 0.35 V dc; IC = 10 mA dc pulsed (see 4.5.1) Subgroup 2 ICBO1 10 µA dc IEBO1 10 µA dc VEB = 4.5 V dc VEB = 6.0 V dc Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO 15 20 2N2369A, 2N4449, 2N3227 V dc V dc 40 70 120 250 30 40 120 250 2N2369A, 2N4449 40 120 2N3227 75 300 Forward-current transfer ratio 3076 VCE = 0.4 V dc; IC = 30 mA dc pulsed (see 4.5.1) hFE2 2N2369A, 2N4449 2N3227 Forward-current transfer ratio 3076 VCE = 1.0 V dc; IC = 10 mA dc pulsed (see 4.5.1) See footnotes at end of table. 14 hFE3 MIL-PRF-19500/317J TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max 20 30 120 150 Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = 1.0 V dc; IC = 100 mA dc; pulsed(see 4.5.1) hFE4 2N2369A, 2N4449 2N3227 Collector-emitter saturation voltage 3071 IC = 10 mA dc; IB = 1.0 mA dc pulsed (see 4.5.1) VCE(sat)1 0.20 V dc Collector-emitter saturation voltage 3071 IC = 30 mA dc; IB = 3.0 mA dc; pulsed (see 4.5.1) VCE(sat)2 0.25 V dc Collector-emitter saturation voltage 3071 IC = 100 mA dc; IB = 10 mA dc; pulsed (see 4.5.1) VCE(sat)3 0.45 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 10 mA dc; IB = 1.0 mA dc; pulsed (see 4.5.1) VBE(sat)1 0.85 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 30 mA dc; IB = 3.0 mA dc; pulsed (see 4.5.1) VBE(sat)2 Base-emitter saturation voltage 3066 Test condition A; IC = 100 mA dc; IB = 10 mA dc; pulsed (see 4.5.1) VBE(sat)3 0.70 0.90 0.80 1.20 V dc ICBO2 30 µA dc Bias condition A; VCE = 10 V dc; VBE = 0.25 V dc IC = 10 mA dc IB = 1.0 mA dc ICEX2 30 µA dc VCE(sat)4 0.3 V dc Test condition A; IC = 10 mA dc; IB = 1.0 mA dc VBE(sat)4 Subgroup 3 High temperature operation Collector to base cutoff current TA = +150°C 3036 High temperature operation TA = +125°C Collector to base cutoff current 3041 Collector - emitter voltage saturated 3071 Base - emitter saturated voltage 2N2369A, 2N4449 2N3227 3066 0.59 0.50 Low temperature operation Forward-current transfer ratio Bias condition D; VCB = 20 V dc TA = -55°C 3076 VCE = 1.0 V dc; IC = 10 mA dc pulsed (see 4.5.1) hFE5 2N2369A, 2N4449 2N3227 Base - emitter saturated voltage V dc V dc 20 40 3066 Test condition A; IC = 10 mA dc; IB = 1.0 mA dc See footnotes at end of table. 15 VBE(sat)5 1.02 V dc MIL-PRF-19500/317J TABLE I. Group A inspection - Continued. Inspection 1/ Method MIL-STD-750 Conditions Symbol Min Limit Max Unit Subgroup 4 Small-signal short-circuit forward current transfer ratio 3306 VCE = 10 V dc; IC = 10 mA dc; f = 100 MHz hfe Open circuit output capacitance 3236 Cobo Input capacitance (output opencircuited) 2N2369A, 2N4449 2N3227 3240 VCB = 5 V dc; IE = 0; 100 kHz < f < 1 MHz VEB = 0.5 V dc; IC = 0; 100 kHz < f < 1 MHz Charge storage time IC = 10 mA dc; IB1 = 10 mA dc; IB2 = 10 mA dc; (see figure 8) 10 4.0 pF 5.0 4.0 pF pF 13 18 ns ns 12 ns 18 25 ns ns Cibo tS 2N2369A, 2N4449 2N3227 Turn-on time IC = 10 mA dc; IB1 = 3.0 mA dc; IB2 = 1.5 mA dc; (see figure 9) ton Turn-off time IC = 10 mA dc; IB1 = 3.0 mA dc; IB2 = 1.5 mA dc; (see figure 9) toff 2N2369A, 2N4449 2N3227 5.0 1/ For sampling (unless otherwise specified) plan see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 16 MIL-PRF-19500/317J NOTES: 1. All capacitance in µF. 2. The input waveforms for each circuit are supplied by a pulse generator with the following characteristics: ZOUT = 50Ω, tr ≤ 1 ns, PW ≥ 300 ns, duty cycle ≤ 2 percent. 3. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ .1 ns, ZIN = 50Ω. FIGURE 8. Charge storage time test circuit. 17 MIL-PRF-19500/317J NOTES: 1. All capacitance in µF. 2. The input waveforms for each circuit are supplied by a pulse generator with the following characteristics: ZOUT = 50Ω, tr ≤ 1 ns, PW ≥ 300 ns, duty cycle ≤ 2 percent. 3. Input and output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ .1 ns, ZIN = 50Ω. 4. VBB = -3.0 V for ton, +12.0 V for toff. FIGURE 9. Turn-on and turn-off time test circuit. 18 MIL-PRF-19500/317J 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. The acquisition requirements are as specified in MIL-PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N2369A) will be identified on the QPL. Die ordering information PIN 2N2369A 2N3227 2N4449 Manufacturer 43611 34156 JANHCA2N2369, JANKCA2N2369 JANHCA2N3227, JANKCA2N3227 JANHCB2N2369A, JANKCB2N2369A JANHCB2N3227, JANKCB2N3227 JANHCA2N4449, JANKCA2N4449 6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force - 11 NASA – NA DLA - CC Preparing activity: DLA - CC (Project 5961-2430) Review activities: Army - AR, MI, SM Navy - AS, CG, MC Air Force - 13, 19, 99 19 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/317J 2. DOCUMENT DATE 9 March 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N4449U, 2N2369AUA, 2N3227UA, 2N4449UA, 2N2369AUB, 2N3227UB, and 2N4449UB JAN JANTX, JANTXV, JANS, JANHC AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (PLEASE PRINT) c. ADDRESS (Include Zip Code) 8. PREPARING ACTIVITY a. NAME Alan Barone c. ADDRESS (Include Zip Code) Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, FEB 1999 (EG) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 7. DATE SUBMITTED EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman Road, Suite 2533 Fort Belvoir, Virginia 22060-6221 Telephone (703)767-6888 DSN 427-6888 PREVIOUS EDITIONS ARE OBSOLETE. WHS/DIOR, Feb 99