IRF740A / RF1S740AST 10A, 400V, 0.550 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies (SMPS) • Low Gate Charge Qg results in Simple Drive Requirement • Uninterruptable Power Supply • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • High Speed Power Switching • Improved Body Diode Package Symbol JEDEC TO-220AB JEDEC TO-263AB DRAIN (FLANGE) D DRAIN (FLANGE) SOURCE DRAIN GATE G GATE S SOURCE Absolute Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Parameter Drain to Source Voltage VGS Gate to Source Voltage Ratings 400 Units V ±30 V 10 A Drain Current ID Continuous (TC = 25oC, VGS = 10V) o Continuous (TC = 100 C, VGS = 10V) 6.3 A Pulsed 40 A 147 1.18 W W/oC PD Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw -55 to 150 o C 300 (1.6mm from case) o C 10ibf*in (1.1N*m) Thermal Characteristics RθJC Thermal Resistance Junction to Case RθCS Thermal Resistance Case to Sink, Flat, Greased Surface RθJA Thermal Resistance Junction to Ambient ©2002 Fairchild Semiconductor Corporation 0.85 0.50 TYP 62 o C/W oC/W o C/W IRF740A / RF1S740AST Rev. C IRF740A / RF1S740AST September 2002 Device Marking IRF740A Device IRF740A Package TO-220AB Reel Size Tube Tape Width NA Quantity 50 RF1S740A RF1S740AST TO-263AB 330mm 24mm 800 Electrical Characteristics TJ = 25°C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units 400 - - V - 0.48 - Statics BVDSS Drain to Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250µA, VGS = 0V V/°C Reference to 25°C, ID = 1mA rDS(ON) Drin to Source On-Resistance VGS = 10V, ID = 6A VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA VDS = 350V - 0.40 0.55 Ω 2.0 3.6 4.0 V - - 1 - - 250 µA - ±100 IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current VGS = ±20V - VDS = 50V, ID = 6A 4.9 - - S VGS = 10V, VDS = 320V, ID = 10A - 17.2 22 nC - 4.5 6.0 nC - 5.8 7.5 nC VDD = 200V, ID = 10A RG = 10Ω, RD = 19.5Ω - 6 - ns - 8 - ns - 21 - ns - 7 - ns - 1060 - pF - 150 - pF - 7.8 - pF - 1490 - pF - 52 - pF 630 - - mJ - - 10 A 12.5 - - mJ - - 10 A - - 40 A VGS = 0V TC = 150o nA Dynamics gfs Forward Transconductance Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge td(ON) Turn-On Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1MHz COSS Output Capacitance VGS = 0V, VDS = 1V, f = 1MHz COSS Output Capacitance VGS = 0V, VDS = 320V, f = 1MHz Avalanche Characteristics EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Drain-Source Diode Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Source to Drain Diode Voltage trr QRR MOSFET symbol showing the integral reverse p-n junction diode. ISD = 18A D G - - 1.25 V ISD = 9A - - 1.0 V Reverse Recovery Time ISD = 10A, dISD/dt = 100A/ms - 240 360 ns Reverse Recovered Charge ISD = 10A, dISD/dt = 100A/ms - 1.9 2.9 µC ©2002 Fairchild Semiconductor Corporation S IRF740A / RF1S740AST Rev. C IRF740A / RF1S740AST Package Marking and Ordering Information IRF740A / RF1S740AST Typical Characteristic 10 100 TC = 25oC VGS DESCENDING 10V 7V 6V 5.5V 5V 4.5V ID, DRAIN TO SOURCE CURRENT (A) ID, DRAIN TO SOURCE CURRENT (A) 100 1.0 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0.1 0.1 1.0 10 TC = 150oC VGS DESCENDING 10V 6V 5.5V 5V 4.5V 10 1.0 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0.1 0.1 100 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 25oC PULSE DURATION = 80ms ID , DRAIN CURRENT (A) DUTY CYCLE = 0.5% MAX VDD = 50V TJ = 150oC 10 1.0 0.1 3 4 5 6 7 1.0 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0.8 0.6 0.4 0.2 VGS = 10V, ID = 10A 0 -50 8 0 -25 VGS , GATE TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 103 COSS 102 CRSS CISS = CGS + CGD COSS @ CDS + CGD CRSS = CGD 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Capacitance vs Drain To Source Voltage ©2002 Fairchild Semiconductor Corporation 75 100 125 150 16 VGS = 0V, f = 1MHz 100 1.0 50 Figure 4. Drain To Source On Resistance vs Junction Temperatrue CISS 101 25 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Transfer Characteristics 104 100 Figure 2. Output Characteristics rDS(ON), DRAIN TO SOURCE ON RESISTANCE (W) Figure 1. Output Characteristics 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 10A 12 200V 8 320V 80V 4 0 0 10 20 30 40 Qg, GATE CHARGE (nC) Figure 6. Gate Charge Waveforms For Constant Gate Current IRF740A / RF1S740AST Rev. C 100 TC = 25oC TJ = 150oC ID, DRAIN CURRENT (A) ISD , SOURCE TO DRAIN CURRENT (A) 100 TJ = 25oC 10 1.0 10 100ms 1ms OPERATION IN THIS AREA LIMITED BY RDS(ON) 1.0 10ms 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.4 1.2 1.6 1.8 10 2.0 100 VSD , SOURCE TO DRAIN VOLTAGE (V) 1000 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Source to Drain Diode Forward Voltage Figure 8. Maximum Safe Operating Area 10 ID, DRAIN CURRENT (A) 8 6 4 2 0 25 50 75 125 100 150 TC, CASE TEMPERATURE (°C) ZqJC , NORMALIZED THERMAL RESPONSE Figure 9. Maximum Drain Current vs Case Temperature 100 0.50 0.20 0.10 10-1 t1 0.05 PD 0.02 t2 0.01 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC SINGLE PULSE 10-3 10-6 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) Figure 10. Normalized Transient Thermal Impedance, Junction to Case ©2002 Fairchild Semiconductor Corporation IRF740A / RF1S740AST Rev. C IRF740A / RF1S740AST Typical Characteristic BVDSS VDS tP VDS L IAS VDD VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDD - VGS DUT tP IAS 0V 0 0.01W tAV Figure 11. Unclamped Energy Test Circuit VDS Figure 12. Unclamped Energy Waveforms VDD Qg(TOT) RL VDS VGS = 10V VGS Qg(5) + VDD VGS = 5V VGS - VGS = 1V DUT 0 Ig(REF) Qg(TH) Qgs Qgd Ig(REF) 0 Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms VDS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + VGS VDD - 10% 0 10% DUT 90% RGS VGS 50% 50% PULSE WIDTH VGS 0 Figure 15. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation 10% Figure 16. Switching Time Waveform IRF740A / RF1S740AST Rev. C IRF740A / RF1S740AST Test Circuits and Waveforms TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST® CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1