GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz AM42-0040 AM42-0040 GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ. 50Ω Input/Output Broadband Matched High Performance Ceramic Bolt Down Package Description M/A-COM’s AM42-0040 is a three-stage MMIC power amplifier in a ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. M/A-COM’s AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full chip passivation for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to performance specifications. Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010 Ordering Information Part Number AM42-0040 Package Ceramic Bolt Down Package Electrical Specifications: TA = +25°C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Frequency = 5.9 to 6.4 GHz Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs. Frequency Output Power vs. Temperature (with respect to TA=+25°C) Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance Second Harmonic Third Harmonic Abbv. GL VSWRIN VSWROUT PSAT PSAT PSAT IDD VGG ΙGG θJC f2 f3 Test Conditions PIN ≤ -10 dBm PIN ≤ -10 dBm PIN ≤ -10 dBm PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. TA= -40°C to +70°C PIN = +10 dBm PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. 25°C Heat Sink PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. Units dB — — dBm dB dB Min. 27 — — 31.7 — — Typ. 30 2.3:1 3.0:1 33.0 1.0 ±0.4 Max. — 2.7:1 — 34.3 1.5 — mA V mA °C/W dBc dBc 900 -2.4 — — — — 1050 -1.2 5 5.6 -35 -45 1100 -0.4 20 — — — V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz 1,2,3,4 Absolute Maximum Ratings Parameter Input Power VDD VGG VDD - VGG IDD Channel Temperature Storage Temperature AM42-0040 4,5,6,7 Typical Bias Configuration Absolute Maximum +23 dBm +12 Volts -3 Volts 12 Volts 1700 mA -40°C to +85°C -65°C to +150°C 1. Exceeding any one or a combination of these limits may cause permanent damage. 2. Case Temperature (TC) = +25°C. 3. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connecting +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc supply voltage will appear at the RF ports. 6. The dc resistance at the input and output ports is a short circuit. No voltage is allowed on these ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. V DD 3.3 µ F 10 0.01 µ F 3 8 AM42-0040 RF IN 1.0 µ F 2,4,7,9 GND RF OUT 5 V GG Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name N/C GND RF In GND VGG N/C GND RF Out GND VDD Description No Connection DC and RF Ground RF Input DC and RF Ground Gate Supply No Connection DC and RF Ground RF Output DC and RF Ground Drain Supply V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz AM42-0040 Typical Performance @ +25°C -5 -20 Output Power vs Frequency @ PIN = +10 dBm 9.0 8.5 25 25 PAE (%) 20 15 20 15 Frequency (GHz) 8.0 7.6 7.2 6.8 6.4 6.0 Frequency (GHz) Power Added Efficiency vs. Input Power @ 6.15 GHz 25 20 15 PAE (%) 35.0 34.5 34.0 33.5 33.0 32.5 32.0 31.5 31.0 30.5 30.0 Output Power vs. Input Power @ 6.15 GHz 5.6 5.2 4.8 8.0 7.6 7.2 6.8 6.4 6.0 5.6 5.2 0 4.8 0 4.4 5 4.0 5 4.4 10 10 4.0 POUT (dBm) Power Added Efficiency (PAE) vs. Frequency @ PIN = +10 dBm 30 30 POUT (dBm) 8.0 Frequency (GHz) Frequency (GHz) 35 7.5 3.0 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 -35 4.0 -40 3.5 -30 3.0 -30 7.0 -25 6.5 -20 S11 6.0 -10 -15 5.5 0 5.0 10 S22 -10 3.5 Magnitude (dB) 20 4.5 30 Gain (dB) Input and Output Return Loss vs. Frequency 0 4.0 Linear Gain vs. Frequency 40 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PIN (dBm) 0 1 2 3 4 5 6 7 8 PIN (dBm) 9 10 11 12 13 14 V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz AM42-0040 V2.00 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.