MBR30100PT Summarize Primary Use Productor Character Dual High-Voltage Schottky Rectifiers ◆ Half Bridge Rectified、Common Cathode Structure. ◆ Multilayer Metal -Silicon Potential Structure. ◆ Low Power Waste，High Efficiency. ◆ Beautiful High Temperature Character. ◆ Have Over Voltage protect loop，high reliability. ◆ RoHs Product. REV:1.01 Typical Referenc e Data VRRM= 100V IF(AV)= 30A ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency Invers Circuit. ● Low Voltage Continued Circuit and Protection Circuit. Pola rit y ■ MBR30100 Schottky diode,in themanufacture uses the main main process technology includes:Silicon epitaxial substrate P+ loop technology,The potential metal and the silicon alloy technology, thedevice uses the two chip, the common cathode the Plastic package structure. Absolute Maximum Ratings Item Maximal Inverted Repetitive Peak Voltage Symbol VDC 100 100 IFAV 30 VRRM Maximal DC Interdiction Voltage Average Rectified Forward Current TC=150℃ Whole Device MBR30100 Unilateral Unit V V A 15 Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Operating Junction Temperature IFSM 150 A TJ -40- +175 ℃ TSTG -40- +175 ℃ Represent ative MBR30100 Storage Temperature Electricity Character Item IR VF Test Condition TJ =25℃ TJ =125℃ TJ =25℃ Minimum VR=VRRM IF=15A 100 uA 1 mA 0.85 www.asemi.tw Unit V Page1 MBR30100PT Dual High-Voltage Schottky Rectifiers The forward voltage and forward current curve REV:1.01 The reverse leak current and the reverse voltage (single-device) curve The crunode capacitance curve www.asemi.tw Page2 MBR30100PT Dual High-Voltage Schottky Rectifiers REV:1.01 TO-247/3P 5 ±0 . 1 5 顶杆孔深0 . 1 5 ±0 . 1 5 1 5 . 7 5 2 ±0 . 1 0 C 4 1 . 1 ±0 . 2 0 3.6 E 3.5 20.45±0.15 24.95±0.15 5.98 D F B1 B 2 G 2 . 4 ±0 . 2 0 A 2 ±0 . 2 0 3±0.20 5.45 1 . 2 ±0 . 2 0 www.asemi.tw 0 . 6 ±0 . 1 0 Page3