MBR40100F Summarize Primary Use Productor Character Dual High-Voltage Schottky Rectifiers ◆ Half Bridge Rectified、Common Cathode Structure. ◆ Multilayer Metal -Silicon Potential Structure. ◆ Low Power Waste，High Efficiency. ◆ Beautiful High Temperature Character. ◆ Have Over Voltage protect loop，high reliability. ◆ RoHs Product. REV:1.12 Typical Reference Data VRRM= 100V IF(AV)= 40A ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency ● Low Voltage Continued Invers Circuit. Circuit and Protection Circuit. ■ MBR40100F Schottky diode,in the manufacture uses the main process technology includes: Silicon epitaxial substrate, P+ loop technology,The potential metal and the silicon alloy technology, the device uses the two chip, the common cathode, the plastic half package structure. Polarity Absolute Maximum Ratings Item Maximal Inverted Repetitive Peak Voltage Symbol VRRM Maximal DC Interdiction Voltage VDC Average Rectified Forward Current TC=150℃ Device Whole IFAV Unilateral MBR40100F 100 100 40 Unit V V A 20 Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Operating Junction Temperature IFSM 300 A TJ -40- +175 ℃ Storage Temperature TSTG -40- +175 ℃ Maximum Thermal Resistance Junction−to−Case RθJC 2.0 ℃/W Representat ive Ｍａｘｉｍｕｍ Unit 100 uA 1 mA 0.88 V Electricity Character Item IR VF Test Condition TJ =25℃ TJ =125℃ TJ =25℃ Minimum VR=VRRM IF=20A www.asemi.tw Page 1 MBR40100F Dual High-Voltage Schottky Rectifiers The forward voltage and forward current curve The crunode capacitance curve REV:1.12 The reverse leak current and the reverse voltage (single-device) curve nt Current Derating Curve, Per Element www.asemi.tw Page 2 MBR40100F Dual High-Voltage Schottky Rectifiers REV:1.12 ITO-220AB 注意事项： 1.XXXX代表日期码，第一码表示公元年的最后一码，第二码表示生产时当月码 （A,B,C⋯.为一月，二月，三月⋯),第三，四码表示大量生产时批次码。 例如:2009年第一月生产的，D/C为9AXX。 2.包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。 MBR40100F XXXX 修订内容 www.asemi.tw Page 3