MMBT3906 TRANSISTOR(PNP) FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C 1. BASE MARKING: 2A 2A 2. EMITTER 3. COLLECTOR (1)B (2)E MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA IEBO VEB=-5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC= -50mA 60 hFE(3) VCE=-1V, IC= -100mA 30 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB= -5mA -0.3 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB=-5mA -0.95 V Emitter cut-off current DC current gain 300 Transition frequency fT VCE=-20V, IC=-10mA,f=100MHz Delay Time td VCC=-3V,VBE=-0.5V 35 nS Rise Time tr IC=-10mA, IB1=-IB2=-1mA 35 nS Storage Time ts VCC=-3V,IC=-10mA, 225 nS Fall Time tf IB1=-IB2=-1mA 75 nS CLASSIFICATION OF Rank Range 300 MHz hFE(1) O Y 100-200 200-300 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT3906 Static Characteristic -500uA -450uA -80 IC COMMON EMITTER VCE=-1V -350uA -300uA -250uA -200uA -40 —— Ta=100℃ -400uA -60 hFE 300 COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -100 -150uA 200 Ta=25℃ 100 -100uA -20 IB=-50uA -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE 0 -0.1 -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 IC -100 -30 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 β=10 -10 -0.0 -3 -1 -30 -10 COLLECTOR CURRENT IC -100 —— IC -100 -200 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ -30 Cob Ta=100℃ CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=-1V -10 -3 Ta=25℃ -1 Cib 3 -0.3 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 1 -0.1 -1.0 fT 600 —— -1 -0.3 IC Pc 300 -10 -3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V -20 (V) Ta VCE=-20V o Ta=25 C COLLECTOR POWER DISSIPATION Pc (mW) TRANSITION FREQUENCY fT (MHz) -300 (mA) 400 200 250 200 150 100 50 0 -1 -3 -10 COLLECTOR CURRENT -30 IC -50 (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 150