MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Value 75 40 6 600 250 500 150 -55to+150 Units V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Test conditions Min Typ Max Unit IC= 10μA, IE=0 75 V IC= 10mA, IB=0 40 V 6 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 0.01 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA hFE(1) DC current gain * hFE(2) hFE(3) * Collector-emitter saturation voltage VCE(sat) * Base-emitter saturation voltage VBE(sat) * Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=10V, IC= 150mA 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz 300 1 0.3 2.0 1.2 300 VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 nS 25 nS VCC=30V, IC=150mA IB1=-IB2=15mA 225 nS 60 nS １ JinYu V MHz *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT2222A ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５