WFD/U4N60
Wisdom
N-Channel MOSFET
Features
■
■
■
■
■
{
Symbol
RDS(on) (Max 2.5 Ω )@VGS =10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
●
◀
1. Gate{
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
▲
●
●
{
General Description
This
Power MOSFET
is
produced
using
3. Source
D-PAK, I-PAK
Wisdom’s
advanced planar stripe, DMOS technology. This latest technology
has been especially designed to minimize on-state resistance,
have a high rugged avalanche characteristics.
2. Drain
2
These devices are
well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
1
3
1
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Value
Units
Drain to Source Voltage
Parameter
600
V
Continuous Drain Current(@TC = 25°C)
3.9
A
Continuous Drain Current(@TC = 100 °C)
2.5
A
11.2
A
IDM
Drain Current Pulsed
VG S
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
dv/dt
PD
TST G, TJ
TL
(Note 1)
±30
V
(Note 2)
218
mJ
Repetitive Avalanche Energy
(Note 1)
4.9
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
49
W
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
0.39
W/°C
- 55 ~ 150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
R JC
Thermal Resistance, Junction-to-Case
-
-
2.56
°C/W
R JA
Thermal Resistance, Junction-to-Ambient*
-
-
50
°C/W
R JA
Thermal Resistance, Junction-to-Ambient
-
-
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
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WFD/U4N60
Electrical Characteristics
( TC = 25 °C unless otherwise noted )
Parameter
Min
Typ
Max
Units
600
-
-
V
ID = 250uA, referenced to 25 °C
-
0.6
-
V/°C
VDS = 600V, VGS = 0V
-
-
10
uA
VDS = 480V, TC = 125 °C
-
-
100
uA
Gate-Source Leakage, Forward
VGS = 30V,
-
-
100
nA
Gate-source Leakage, Reverse
VGS = -30V,
-
-
-100
nA
2.0
-
4.0
V
-
2.0
2.5
Ω
710
Symbol
Test Conditions
Off Characteristics
BVDSS
Δ
Δ
VGS = 0V, I D = 250uA
Drain-Source Breakdown Voltage
BVDSS / Breakdown Voltage Temperature
coefficient
TJ
I DSS
Drain-Source Leakage Current
I GSS
VDS = 0V
VDS = 0V
On Characteristics
VG S(th)
Gate Threshold Voltage
VDS = VGS , I D = 250uA
RDS (ON )
Static Drain-Source On-state Resistance
VGS =10 V, I D = 1.4A
Dynamic Characteristics
Ciss
Input Capacitance
-
545
Coss
Output Capacitance
-
60
80
C rss
Reverse Transfer Capacitance
-
8
11
-
10
30
-
35
80
-
45
100
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
t d(on)
Turn-on Delay Time
tr
VD D =300V, ID =4.0A, RG =25Ω
Rise Time
t d(off)
Turn-off Delay Time
tf
(Note 4, 5)
Fall Time
-
40
90
Qg
Total Gate Charge
-
15
20
Q gs
Gate-Source Charge
-
2.8
-
Q gd
Gate-Drain Charge(Miller Charge)
-
6.2
-
VDS =480V, VGS =10V, ID =4.0A
(Note 4, 5)
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
t rr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
Typ.
Max.
Integral Reverse p-n Junction
Diode in the MOSFET
Test Conditions
-
-
2.8
-
-
11.2
IS =2.8A, VGS =0V
-
-
1.4
-
300
-
ns
-
2.2
-
uC
IS =4.0A, VGS =0V, dI F /dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25mH, IAS =4.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤
4.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS,
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤
5. Essentially independent of operating temperature.
Starting TJ = 25° C
2%
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Unit.
A
V
Typical Characteristics
1
Top :
V
10
VGS
15.0
1
10
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom:
5.0
0
10
150oC
0
10
o
25 C
-1
10
o
※ Notes:
-55 C
※ Notes:
1. 250µ s Pulse Test
2. TC = 25℃
1. VDS = 40V
2. 250µ s Pulse Test
-1
10
-1
0
10
2
1
10
10
4
6
8
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
1
10
10
VG S = 10V
8
V GS =
6
20V
0
10
4
150℃
25℃
※ Notes:
2
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
-1
0
0
2
4
6
8
10
12
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss C
=gd
12
VDS = 120V
10
VDS = 300V
Ciss
VDS = 480V
8
500
6
Coss
4
※ Notes :
Crss
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 4.0 A
0
-1
10
0
0
10
1
10
0
4
8
12
16
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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10
Typical Characteristics
(Co n tinu e d)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
1.0
※ Notes :
0.9
1. VGS =0 V
2. ID =250 µA
0.8
-100
-50
0
50
100
150
※ Notes:
0.5
200
0.0
-100
1. VGS = 10 V
2. ID = 2.0 A
-50
0
50
100
150
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
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200
Gate Charge Test Circuit & Waveform
VGS
SameType
asDUT
50KΩ
Qg
200nF
12V
10V
300nF
VGS
Qgs
VDS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
D
S
R
L
V
D
S
9
0
%
V
D
D
V
G
S
R
G
1
0
%
V
G
S
D
U
T
1
0
V
td
(
o
n
)
tr
td
(
o
ff)
to
n
tf
to
ff
Unclamped Inductive Switching Test Circuit & Waveforms
B
V
D
S
S
1
E
IAS2 -------------------A
S=---- L
2
B
V
D
S
S-V
D
D
L
V
D
S
B
V
D
S
S
IAS
ID
R
G
10
V
V
D
D
D
U
T
ID(t)
V
D
D
V
D
S(t)
tp
tp
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T
im
e
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D U T
V
DS
_
I
SD
L
D r iv e r
R
V
V
G S
( D riv e
r )
I
SD
G
S a m e T yp
e as D U
T
V
• d v / d t c o n t r o lle d b y G R
• I S D c o n t r o lle d b y p u ls e
G S
D =
---
p e r io d
G a te P u ls e W
id th
------- -------------- -G a te
od
IF M , B o d y
u rre n t
P u ls e
D io d e
10V
P e ri
F o rw a rd
C
d i/ d t
( D U
T )
IR M
B ody
V
D io d e
R e ve rse
C u rre n t
D S
( D U
T )
B ody
V
D io d e
R e c o v e ry
V
SD
B ody
D io d
e
F o r w a rd
V o lta g e
ro p
d v /d t
D
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DD
DD