ETC 13001B

CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD
TO-92 Plastic-Encapsulate Transistors
www.harom.cn
3DD13001B
TRANSISTOR (NPN)
TO-92
FEATURE
· power switching applications
1. BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
2. COLLECTOR
Value
Units
VCBO
Collector -Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
0.2
A
PC
Collector Power Dissipation
0.75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
3. EMITTER
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA , IE=0
600
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
7
V
Collector cut-off current
ICBO
VCB= 600V , IE=0
100
μA
Collector cut-off current
ICEO
VCE= 400V, IB=0
200
μA
Emitter cut-off current
IEBO
VEB=
100
μA
hFE(1)
VCE= 20V, IC= 20mA
10
hFE(2)
VCE= 10V, IC= 0.25 mA
5
7V, IC=0
40
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC= 50mA, IB= 10 mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 50 mA, IB= 10mA
1.2
V
Transition frequency
fT
Fall time
tf
Storage time
tS
VCE= 20V, IC=20mA
f = 1MHz
8
MHz
IC=50mA, B1=-IB2=5mA,
VCC=45V
0.3
μs
1.5
μs
CLASSIFICATION OF hFE(1)
Range
10-13
13-16
16-19
19-22
22-25
25-28
28-31
31-34
34-37
37-40
Typical characteristics
3DD13001B