CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC635/637/639 TRANSISTOR (NPN) TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Emitter Voltage VCBO Collector-Emitter Voltage VCEO Value Units BC635 45 V BC637 60 V BC639 100 V BC635 45 V BC637 60 V BC639 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions IC=10mA, IB=0 Collector-emitter breakdown voltage MIN BC635 V(BR)CEO TYP MAX UNIT 45 V BC637 60 V BC639 80 V Collector cut-off current ICBO VCB= 30 V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IB=0 0.1 μA hFE(1) VCE=2 V, IC= 5mA hFE(2) VCE=2V, IC=150mA DC current gain Collector-emitter saturation voltage 40 250 BC637-10/BC639-10 63 160 BC637-16/BC639-16 100 250 hFE(3) VCE=2V, IC= 500mA VCE(sat) IC=500mA, IB=50mA Base-emitter voltage VBE Transition frequency fT 25 BC635 25 VCE=2V, IC=500mA VCE=5V, IC=10mA,f= 50 MHZ 100 0.5 V 1 V MHz Typical Characteristics BC635/637/639