MDTIC MDT10P432

深圳市美芯微电子有限公司麦肯单片机授权一级代理商
电话;0755-36857609/27945551/29491882
地址:深圳市宝安区宝源路名优产品采购中心B1区721室
MDT10P432
1. General Description
This 8-bit Micro-controller with built-in carrier generator uses a fully static CMOS technology to achieve high
speed, small size, low power and high noise immunity.
On chip memory includes 512 words of ROM, and 28 bytes of static RAM.
2. Features
Fully CMOS static design
8-bit data bus
On chip ROM size : 512 words
Internal RAM size : 28 bytes
(24general purpose registers, 4 special registers)
34 single word instructions
14-bit instructions
2-level stacks
Operating voltage : 2.0V ~ 5.0 V
Addressing modes include direct, indirect and relative addressing modes
Power-on Reset
Internal RC 432K, 440K, 455K, 480KHz select in option.
System clock : 455KHz crystal (OSC1 cap 50P; OSC2 cap 50P)
Auto detect external crystal on board .
PA0-7 : 8 input only pins with pull-high resistor and input low wakeup detect circuit.
PB0 : CMOS output.
PB1~7 : Seven open drain output pins.
Built in remote control carrier synthesizer Fosc/8 (56.9K) or Fosc/12 (37.9K) by firmware setting.
Option used PB0 NMOS without BJT.
4096 clocks for external oscillator start up time.
3. Applications
Remote controller
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1 of 13
2010.8
Ver. 1.5
MDT10P432
4. Pin Assignment
※
P – PDIP, S - PSOP
MDT10P432P11
MDT10P432S11
PA2
PA3
PA6
PA7
VSS
PB0
PB1
PB2
PB3
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
MDT10P432P13
MDT10P432S13
PA1
PA0
OSC1
OSC2
VDD
PB7
PB6
PB5
PB4
PA2
PA3
PA6
PA7
VSS
PB0
PB1
PB2
PB3
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
PA5
PA4
PA1
PA0
VDD
PB7
PB6
PB5
PB4
MDT10P432P21
MDT10P432S21
PA5
PA2
PA3
PA6
PA7
VSS
PB0
PB1
PB2
PB3
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
PA4
PA1
PA0
OSC1
OSC2
VDD
PB7
PB6
PB5
PB4
MDT10P432P31
MDT10P432S31
PA2
PA3
PA6
PA7
VSS
PB0
PB1
PB2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
MDT10P432P35
MDT10P432S35
PA1
PA0
OSC1
OSC2
VDD
PB7
PB6
PB5
PA3
PA6
PA7
VSS
PB0
PB1
PB2
PB3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
PA2
PA1
PA0
VDD
PB7
PB6
PB5
PB4
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
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2 of 13
2010.8
Ver. 1.5
MDT10P432
5. Order Information
ROM
RAM
(Words)
(Bytes)
MDT10P432P11
0.5K
MDT10P432P13
MDT10P432P21
Device
MDT10P432P31
I/O
Package
mil
Remark
24
14 (6 input; 8 output)
18-DIP
300
18 pin ; 6 input (no PA 4~5) ; 8 output
0.5K
24
16 (8 input; 8 output)
18-DIP
300
18 pin ; 8 input ; 8 output; (no OSC1&2)
0.5K
24
16 (8 input; 8 output)
20-DIP
300
0.5K
24
12 (6 input; 6 output)
16-DIP
300
20 pin ; 8 input ; 8 output
16 pin ; 6 input (no PA 4&5) ; 6 output
(no
PB 3&4)
16 pin ; 6 input (no PA 4~5) ; 8 output;
MDT10P432P35
0.5K
24
14 (6 input; 8 output)
16-DIP
300
MDT10P432S11
0.5K
24
14 (6 input; 8 output)
18-SOP
300
18 pin ; 6 input (no PA 4~5) ; 8 output
MDT10P432S13
0.5K
24
16 (8 input; 8 output)
18-SOP
300
18 pin ; 8 input ; 8 output; (no OSC1&2)
MDT10P432S21
0.5K
24
16 (8 input; 8 output)
20-SOP
300
MDT10P432S31
MDT10P432S35
0.5K
0.5K
24
24
12 (6 input; 6 output)
14 (6 input; 8 output)
16-SOP
16-SOP
150
150
(no OSC1&2)
20 pin ; 8 input ; 8 output
16 pin ; 6 input (no PA 4&5) ; 6 output
(no PB 3&4)
16 pin ; 6 input (no PA 4~5) ; 8 output;
(no OSC1&2)
6. Block Diagram
Stack Tw o
Levels
RA M
24×8
RO M
512×14
Port A
9 bits
Program
C ounters
9 bits
Port
PA 0~PA 7
8 bits
14 bits
Instruction
R egister
Special R egister
Port PB0
D 0~D 7
Port B
External X T
Instruction
D ecoder
Internal R C
Port
PB1~PB7
C ontrol C ircuit
D ata
8bit
Pow er on R eset
Pow er D ow n R eset
W orking R egister
Status R egister
A LU
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
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3 of 13
2010.8
Ver. 1.5
MDT10P432
7. Pin Function Description
Pin Name
I/O
PA0~PA7
I
Function Description
Port A, TTL input level. Built in 50K ohm pull-high resistor. In sleep
mode, a high-to-low change on any pin will cause chip reset.
PB0
O
CMOS output pin.
Enable NMOS sink 250mA by option (replace BJT)
PB1~PB7
O
Port B open drain output pins, 50K ohm pull-high resistor.
OSC1
I
Crystal oscillation input pin
OSC2
O
Crystal oscillation output pin
Vdd
Power supply
Vss
Ground
8. Memory Map
8.1 Program memory :
000H
Program memory
1FEH
1FFH
Reset Vector
8.2 Register Map
Address
Description
00
Indirect Addressing Register
01
Unimplemented
02
PC
03
STATUS
04
MSR
05
Port A (Input Only)
06
Port B output register
07
Unimplemented
08~1F
Internal RAM, General Purpose Register
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4 of 13
2010.8
Ver. 1.5
MDT10P432
(1) IAR ( Indirect Address Register) : R0
(2) PC (Program Counter) : R2
Write PC, CALL --- always 0
LJUMP, JUMP, LCALL --- from instruction word
RTIW, RET --- from STACK
A9
A8
A7~A0
Write PC, JUMP, CALL --- from STATUS b5
LJUMP, LCALL --- from instruction word
RTIW, RET --- from STACK
Write PC --- from ALU
LJUMP, JUMP, LCALL, CALL --- from instruction word
RTIW, RET --- from STACK
(3) STATUS (Status register) : R3
Bit
Symbol
Function
0
C
Carry bit
1
HC
Half Carry bit
2
Z
Zero bit
3
/PF
Power loss Flag bit
4
/LPT
Low power detect
=0 : Vdd is lower than 2.1 ~ 2.3V
=1 : Vdd is higher than 2.1 ~ 2.3V
5
——
General purpose bit
7-6
——
Carrier frequency control bits
=00 No carrier (default)
=01 Fosc/8, 1/2 duty
=10 Fosc/12, 1/2 duty
=11 Fosc/12, 1/3 duty (1/3 – Hi ; 2/3 - Low)
(4) MSR (Memory Select Register) : R4
(5) PORT A : R5
Bit 7-0 : Port A data input
(6) PORT B : R6
Bit 7-1 : PB7-PB1 output register (open drain output)
Bit 0
: PB0 output register (CMOS output)
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
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5 of 13
2010.8
Ver. 1.5
MDT10P432
9. Reset Condition for all Registers
Register
Address
Power-On Reset
IAR
00h
-
PC
02h
1111 1111
STATUS
03h
0001 1xxx
MSR
04h
111x xxxx
PB Output data
06h
1111 111#
Note : “ x “=unknown, “ – “=unimplemented, read as “0”
“# “=value depends on condition
10. Instruction Set
010000 00000000
Mnemonic
Operands
NOP
No operation
None
010000 00000010
SLEEP
Sleep mode
010000 00000100
RET
Return
0→WT,
stop OSC
Stack→PC
010000 00000rrr
CPIO R
Control I/O port register
W→CPIO r
None
010001 1rrrrrrr
STWR R
Store W to register
W→R
None
011000 trrrrrrr
LDR R, t
Load register
R→t
Z
111010 iiiiiiii
LDWI I
Load immediate to W
I→W
None
010111 trrrrrrr
SWAPR R, t
Swap halves register
None
011001 trrrrrrr
INCR R, t
Increment register
[R(0~3) ↔
R(4~7)]→t
R + 1→t
011010 trrrrrrr
INCRSZ R, t
Increment register, skip if zero
R + 1→t
None
011011 trrrrrrr
ADDWR R, t
Add W and register
W + R→t
C, HC, Z
011100 trrrrrrr
SUBWR R, t
Subtract W from register
C, HC, Z
011101 trrrrrrr
DECR R, t
Decrement register
R ﹣W→t
(R+/W+1→t)
R ﹣1→t
011110 trrrrrrr
DECRSZ R, t
Decrement register, skip if zero
R ﹣1→t
None
010010 trrrrrrr
ANDWR R, t
AND W and register
R ∩ W→t
Z
110100 iiiiiiii
ANDWI i
AND W and immediate
i ∩ W→W
Z
010011 trrrrrrr
IORWR R, t
Inclu. OR W and register
R ∪ W→t
Z
110101 iiiiiiii
IORWI i
Inclu. OR W and immediate
i ∪ W→W
Z
010100 trrrrrrr
XORWR R, t
Exclu. OR W and register
R ♁ W→t
Z
110110 iiiiiiii
XORWI i
Exclu. OR W and immediate
i ♁ W→W
Z
011111 trrrrrrr
COMR R, t
Complement register
/R→t
Z
Instruction Code
Function
Operating
Status
TF, PF
None
Z
Z
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6 of 13
2010.8
Ver. 1.5
MDT10P432
010110 trrrrrrr
Mnemonic
Operands
RRR R, t
Rotate right register
010101 trrrrrrr
RLR
Rotate left register
010000 1xxxxxxx
CLRW
010001 0rrrrrrr
CLRR
0000bb brrrrrrr
BCR
0010bb brrrrrrr
BSR
0001bb brrrrrrr
Instruction Code
Function
Operating
Status
C
Clear working register
R(n) →R(n-1),
C→R(7),
R(0)→C
R(n)→r(n+1),
C→R(0),
R(7)→C
0→W
Clear register
0→R
Z
R, b
Bit clear
0→R(b)
None
R, b
Bit set
1→R(b)
None
BTSC R, b
Bit Test, skip if clear
Skip if R(b)=0
None
0011bb brrrrrrr
BTSS R, b
Bit Test, skip if set
Skip if R(b)=1
None
1000nn nnnnnnnn
LCALL n
Long CALL subroutine
None
1010nn nnnnnnnn
LJUMP n
Long JUMP to address
n→PC,
PC+1→Stack
n→PC
110000 nnnnnnnn
CALL
n
Call subroutine
None
110001 iiiiiiii
RTIW
i
Return, place immediate to W
11001n nnnnnnnn
JUMP
n
JUMP to address
n→PC,
PC+1→Stack
Stack→PC,
i→W
n→PC
R, t
R
C
Z
None
None
None
Note :
W
CPIO
HC
Z
C
PF
PC
OSC
Inclu.
Exclu.
AND
:
:
:
:
:
:
:
:
:
:
:
Working register
Control I/O port register
Half carry
Zero flag
Carry flag
Power loss flag
Program Counter
Oscillator
Inclusive ‘∪’
Exclusive ‘♁’
Logic AND ‘∩’
b
t
:
:
Bit position
Target
0 : Working register
1 : General register
R
i
n
/
x
:
:
:
:
:
General register address
Immediate data ( 8 bits )
Immediate address
Complement
Don’t care
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
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7 of 13
2010.8
Ver. 1.5
MDT10P432
11. Electrical Characteristics
(Operating temperature at 25℃).
Sym
Description
Condition
Max
Unit
2.0
6.0
V
Vdd=5V
-0.6
1.0
V
PA
Vdd=5V
2.0
Vdd+0.6
V
Input leakage current
Vdd=5V
+/-1
μA
Vdd Operating voltage
VIL
IIL
Typ
Input Low Voltage
PA
VIH
Min
Input high Voltage
VOL Output Low Voltage
PB7~0
PB0 enable 250mA NMOS
PB0 enable 250mA NMOS
Vdd=5V, IOL=20mA
0.6
V
Vdd=5V, IOL=5mA
0.2
V
Vdd=5V, IOL=20mA
0.08
V
Vdd=5V, IOL=20mA
0.03
V
Vdd=3V, sink current
250
mA
Vdd=2V, sink current
100
mA
Vdd=5V, IOH= -20mA
2.8
V
Vdd=5V, IOH= -5mA
4.2
V
1.8
V
VOH Output High Voltage
PB0
Vpr
Power Edge-detector Reset
Voltage
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8 of 13
2010.8
Ver. 1.5
MDT10P432
12. PA0 ~ PA7 Equivalent Circuit
Sleep
Input low
wake_up
PA0~7:
Pull_Hi 50K
Data
Bus
TTL
Input Resistor
Read
TTL Input Level
Port
Input Pad
13. (A) PB0 Equivalent Circuit
250mA
NMOS enable
IR Carrier
D
Q
Set I/O
C
DFFRA
Latch
/Reset
RB
D1
s
Q
D0
Port
Output
Pad
QB
Replace
BJT
Data Bus
Read
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9 of 13
2010.8
Ver. 1.5
MDT10P432
(B) PB1~7 Equivalent Circuit
D
TRIS
C
Reset
PB
Q
PB1~7:
Pull_Hi 50K
DFFPA
Latch
QB
Port
Output Pad
Data
Bus
Read
14. Application circuit (reference)
(A). Enable internal 455KHz & 250 mA NMOS (Without BJT)
Note : Power Vdd & Vss must used metal line to IC Vdd & Vss with shortest distance
IR must used metal line to Vdd & PB0
VCC
U1
15
17
C3
OSC2
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7
VSS
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
VDD
OSC1
+
10u
1
16
2
C4
0.1u
6
18
19
2
3
20
1
4
5
7
8
9
10
11
12
13
14
MDT10P432P21/S21
C4 by-pass
capacitor must
closed the IC
Vdd and Vss
1
1
1
1
1
1
1
1
S1
S9
S17
S25
S33
S41
S49
S57
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S2
S10
S18
S26
S34
S42
S50
S58
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S3
S11
S19
S27
S35
S43
S51
S59
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S4
S12
S20
S28
S36
S44
S52
S60
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S5
S13
S21
S29
S37
S45
S53
S61
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S6
S14
S22
S30
S38
S46
S54
S62
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S7
S15
S23
S31
S39
S47
S55
S63
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S8
S16
S24
S32
S40
S48
S56
S64
VCC
R1
10
D1
IR
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
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10 of 13
2010.8
Ver. 1.5
2
2
2
2
2
2
2
2
MDT10P432
VCC
14
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7
VDD
C3
+
1
10u
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
C4
2
0.1u
5
VSS
15
16
1
2
17
18
3
4
6
7
8
9
10
11
12
13
1
1
S1
S9
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S2
S10
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S3
S11
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S4
S12
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S5
S13
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S6
S14
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S7
S15
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S8
2
S16
2
MDT10P432P13/S13
1
C4 by-pass
capacitor must be
closed to the IC
Vdd and Vss
1
1
1
1
1
S17
S25
S33
S41
S49
S57
S18
S26
S34
S42
S50
S58
S19
S27
S35
S43
S51
S59
S20
S28
S36
S44
S52
S60
S21
S29
S37
S45
S53
S61
S22
S30
S38
S46
S54
S62
S23
S31
S39
S47
S55
S63
S24
2
S32
2
S40
2
S48
2
S56
2
S64
2
VCC
R1
10
D1
IR
VCC
13
VDD
C3
+
1
10u
C4
2
0.1u
4
VSS
PA0
PA1
PA2
PA3
PA6
PA7
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
14
15
16
1
2
3
5
6
7
8
9
10
11
12
MDT10P432 P35/S35
C4 by-pass
capacitor must be
closed to the IC
Vdd and Vss
1
1
1
1
1
1
1
1
S1
S9
S17
S25
S33
S41
S49
S57
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S2
S10
S18
S26
S34
S42
S50
S58
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S5
S13
S21
S29
S37
S45
S53
S61
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S6
S14
S22
S30
S38
S46
S54
S62
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S7
S15
S23
S31
S39
S47
S55
S63
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S8
S16
S24
S32
S40
S48
S56
S64
2
2
2
2
2
2
2
2
VCC
R1
10
D1
IR
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
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11 of 13
2010.8
Ver. 1.5
MDT10P432
(B). Enable internal 455KHz , disable 250 mA NMOS
Note : Power Vdd & Vss must used metal line to IC Vdd & Vss with shortest distance
VCC
14
VDD
C3
+
2
1
10u
C4
0.1u
5
VSS
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
15
16
1
2
17
18
3
4
6
7
8
9
10
11
12
13
1
1
MDT10P432P13/S13
1
C4 by-pass
capacitor must be
closed to the IC
Vdd and Vss
1
1
1
1
1
S1
S9
S17
S25
S33
S41
S49
S57
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S2
S10
S18
S26
S34
S42
S50
S58
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S3
S11
S19
S27
S35
S43
S51
S59
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S4
S12
S20
S28
S36
S44
S52
S60
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S5
S13
S21
S29
S37
S45
S53
S61
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S6
S14
S22
S30
S38
S46
S54
S62
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S7
S15
S23
S31
S39
S47
S55
S63
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S8
2
S16
2
S24
2
S32
2
S40
2
S48
2
S56
2
S64
2
VCC
R1
10
D1
IR
R2
1
Q1
3
NPN CBE
2
1K
VCC
13
VDD
C3
+
1
10u
C4
2
0.1u
4
VSS
PA0
PA1
PA2
PA3
PA6
PA7
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
14
15
16
1
2
3
5
6
7
8
9
10
11
12
MDT10P432P35/S35
C4 by-pass
capacitor must be
closed to the IC
Vdd and Vss
1
1
1
1
1
1
1
1
S1
S9
S17
S25
S33
S41
S49
S57
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S2
S10
S18
S26
S34
S42
S50
S58
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S5
S13
S21
S29
S37
S45
S53
S61
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S6
S14
S22
S30
S38
S46
S54
S62
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S7
S15
S23
S31
S39
S47
S55
S63
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S8
S16
S24
S32
S40
S48
S56
S64
2
2
2
2
2
2
2
2
VCC
R1
10
D1
IR
R2
2
1K
1
Q1
3
NPN CBE
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
http://www.mxmcu.com.cn
http://www.mdtic.com.tw
12 of 13
2010.8
Ver. 1.5
MDT10P432
(C). Disable internal 455KHz & 250 mA NMOS
Note : Power Vdd & Vss must used metal line to IC Vdd & Vss with shortest distance
VCC
C1
15
17
2
U1
OSC2
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7
VSS
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
VDD
OSC1
2
1
50P
Y1
455KHz
C2
2
16
1
1
C3
1
50P
+
0.1u
2
10u
C4
6
18
19
2
3
20
1
4
5
7
8
9
10
11
12
13
14
S1
1
S9
1
MDT10P432P21/S21
C4 by-pass
capacitor must
closed the IC
Vdd and Vss
S17
1
S25
1
S33
1
S41
1
S49
1
S57
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S2
S10
S18
S26
S34
S42
S50
S58
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S3
S11
S19
S27
S35
S43
S51
S59
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S4
S12
S20
S28
S36
S44
S52
S60
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S5
S13
S21
S29
S37
S45
S53
S61
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S6
S14
S22
S30
S38
S46
S54
S62
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S7
S15
S23
S31
S39
S47
S55
S63
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
S8
S16
S24
S32
S40
S48
S56
S64
VCC
R1
10
D1
IR
R2
2
1
Q1
3
NPN CBE
1K
This specification is subject to be changed without notice. Please visit our web site for the most updated information.
http://www.mdtic.com.tw
http://www.mxmcu.com.cn
13 of 13
2010.8
Ver. 1.5
2
2
2
2
2
2
2
2