SIRECTIFIER SD3001

SD30
Discrete Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
50
100
200
400
600
800
1000
SD3001
SD3002
SD3003
SD3004
SD3005
SD3006
SD3007
Symbol
IF(AV)M
VRRM
V
50
100
200
400
600
800
1000
Test Conditions
o
o
TC=95 C; 180 sine
o
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
0.230 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
30
A
IFSM
TVJ=45 C;
VR =0V;
TVJ=150oC;
VR =0V;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
300
330
270
300
A
2
TVJ=45oC;
VR =0V;
TVJ=150oC;
VR =0V;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
450
460
365
385
A2s
It
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Md
Mounting torque
Weight
Symbol
IR
Test Conditions
TVJ=TVJM; VR=VRRM
o
VF
IF=45A; TVJ=25 C
VTO
For power-loss calculations only
rT
RthJC
o
C
0.4...0.6
Nm
2
g
Characteristic Values
Unit
_1
<
mA
_ 1.45
<
V
0.85
V
TVJ=TVJM
13
m
DC current
1.0
K/W
SD30
Discrete Diodes
50
250
A
A
40
200
IFSM
30
150
IF
TVJ=150°C
TVJ= 25°C
20
103
50Hz, 80% VRRM
A2s
VR = 0 V
2
It
TVJ = 45°C
TVJ = 45°C
100
TVJ = 150°C
TVJ = 150°C
10
50
0
0.0
0.4
0.8
1.2 V
102
0
0.001
1.6
0.01
0.1
VF
s
1
1
2
3
t
Fig. 1 Forward current versus voltage
drop per diode
4 5 6 7 ms
8 910
t
Fig. 3 I2t versus time per diode
Fig. 2 Surge overload current
60
35
A
W
30
IF(AV)M
RthHA :
Ptot
40
25
1 K/W
2 K/W
3 K/W
5 K/W
7 K/W
10 K/W
15 K/W
20
15
20
10
5
0
0
0
10
30 A
20
0
20
40
60
80 100 120 140 °C
Id(AV)M
0
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current versus
case temperature
1.2
K/W
1.0
ZthJC
0.8
Constants for ZthJC calculation:
0.6
0.4
0.2
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
s
1
t
10
i
Rthi (K/W)
ti (s)
1
2
3
4
5
0.01362
0.1962
0.267
0.3052
0.218
0.0001
0.00316
0.023
0.4
0.15