MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. • • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature High Surge Capacity Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • • 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: B1100 AXIAL LEAD CASE 59-10 DO-41 PLASTIC MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Max Unit VRRM VRWM VR 100 V Average Rectified Forward Current (VR(equiv) ≤ 0.2 VR(dc), RJA = 50°C/W, P.C. Board Mounting, see Note 1, TA = 120°C) IO 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Operating and Storage Junction Temperature Range Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 4 MBR 1100 MBR1100 = Device Code ORDERING INFORMATION Device 50 TJ, Tstg -65 to +150 dv/dt 10 A Package Shipping MBR1100 Axial Lead 1000 Units/Bag MBR1100RL Axial Lead 5000/Tape & Reel °C Preferred devices are recommended choices for future use and best overall value. V/ns 1 Publication Order Number: MBR1100/D MBR1100 THERMAL CHARACTERISTICS (See Note 2) Characteristic Symbol Max Unit RJA See Note 1 °C/W Symbol Max Unit Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage * (iF = 1 A, TL = 25°C) (iF = 1 A, TL = 100°C) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage * (TL = 25°C) (TL = 100°C) iR Volt 0.79 0.69 mA 0.5 5.0 20 10 TJ = 150°C 5.0 IR , REVERSE CURRENT ( A) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) * Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. 100°C 2.0 25°C 1.0 0.5 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1K 400 200 100 40 20 10 TJ = 150°C 125°C 100°C 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 10 0 20 30 40 50 60 70 80 90 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 100 4.0 3.0 dc 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 180 200 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 4.0 3.0 SQUARE WAVE dc 2.0 1.0 0 0 1.0 2.0 3.0 4.0 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 3. Current Derating (Mounting Method 3 per Note 1) Figure 4. Power Dissipation http://onsemi.com 2 5.0 MBR1100 NOTE 2 — THERMAL CIRCUIT MODEL: (For heat conduction through the leads) 150 C, CAPACITANCE (pF) 100 90 80 70 60 50 RS(A) RL(A) RJ(A) TA(A) TJ = 25°C fTEST = 1 MHz RL(K) RJ(K) RS(K) TA(K) PD TL(A) TC(A) TJ TC(K) TL(K) 40 30 Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: 20 15 0 10 30 20 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heat Sink to Ambient RL = Thermal Resistance, Lead to Heat Sink RJ = Thermal Resistance, Junction to Case PD = Power Dissipation NOTE 1 — MOUNTING DATA: Data shown for thermal resistance junction-to-ambient (RJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 100°C/W/in typically and 120°C/W/in maximum. RθJ = 36°C/W typically and 46°C/W maximum. Typical Values for RJA in Still Air Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 1 52 65 72 85 °C/W NOTE 3 — HIGH FREQUENCY OPERATION: 2 67 80 87 100 °C/W 3 — Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. P.C. Board with 1-1/2 ″ x 1-1/2″ copper surface. P.C. Board with 1-1/2 ″ x 1-1/2″ copper surface. É ÉÉÉÉÉÉÉÉ É ÉÉÉÉÉÉÉÉ É É ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ L Mounting Method 2 L °C/W 50 Mounting Method 3 Mounting Method 1 L RJA L = 3/8″ BOARD GROUND PLANE L VECTOR PIN MOUNTING http://onsemi.com 3 MBR1100 PACKAGE DIMENSIONS AXIAL LEAD, DO-41 CASE 59-10 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 59−04 OBSOLETE, NEW STANDARD 59−09. 4. 59−03 OBSOLETE, NEW STANDARD 59−10. 5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 6. POLARITY DENOTED BY CATHODE BAND. 7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B K D F DIM A B D F K A F INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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