RB705D Diodes Schottky barrier diode RB705D zExternal dimensions (Units : mm) 2.9±0.2 1.9±0.2 1.1 0.95 0.95 2.8±0.2 +0.2 −0.1 D3H 0.4 0.8±0.1 1.6 zFeatures 1) Small surface mounting type. (SMD3) 2) Low reverse current and low forward voltage. 3) Multiple diodes with common cathode configuration. 0~0.1 +0.1 −0.05 0.15 +0.1 −0.06 (All leads have the same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 zConstruction Silicon epitaxial planar zCircuit zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 30 mA IFSM 200 mA Tj 125 °C Parameter Peak forward surge current∗ Junction temperature Storage temperature °C −40~+125 Tstg ∗60 Hz for 1 zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF − − 0.37 V IF=1mA Reverse current IR − − 1 µA VR=10V Capacitance between terminals CT − 2.0 − pF VR=1V, f=1MHz Note) ESD sensitive product handling required. +0.2 −0.1 0.3~0.6 zApplications General purpose detection High speed switching RB705D Diodes =1 25 °C 10m Ta=75°C Ta=25°C 100µ Ta=−25°C 10µ 1µ 0 0.2 0.4 0.6 Ta=125°C REVERSE CURRENT : IR (A) 100m 1m 100µ Typ. pulse measurement Ta FORWARD CURRENT : IF (A) 1 0.8 1.0 1.2 10µ 1µ Ta=25°C 100n Ta=−25°C 10n 1n 0 1.4 Ta=75°C 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) Fig. 2 Reverse characteristics Fig. 1 Forward characteristics 5 100 Io CURRENT (%) REVERSE RECOVERY TIME : trr (ns) 10 2 1 0.5 60 40 20 0.2 0.1 0 80 4 8 12 16 20 24 FORWARD CURRENT : IF (mA) Fig. 4 Reverse recovery time characteristics 28 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig. 5 Derating curve (mounting on glass epoxy PCBs) CAPACITANCE BETWEEN TERMINALS : CT (pF) zElectrical characteristic curves (Ta = 25°C) 100 10 1 0.1 0 5 10 15 20 25 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics