VTP Process Photodiodes VTP9412 PACKAGE DIMENSIONS inch (mm) CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP9412 SYMBOL ISC CHARACTERISTIC Short Circuit Current TEST CONDITIONS UNITS H = 100 fc, 2850 K Min. Typ. Max. 10 17 µA ISC Temperature Coefficient 2850 K .20 %/°C Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 50 V RSH Shunt Resistance H = 0, V = 10 mV CJ Junction Capacitance H = 0, V = 15 V Re Responsivity 940 nm .011 A/(W/cm2) SR Sensitivity @ Peak .55 A/W TC ISC VOC TC VOC ID mV/°C 7 .4 nA GΩ 6 pF λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. NEP Noise Equivalent Power 8.7 x 10-14 (Typ.) W ⁄ Hz Specific Detectivity 1.5 x 10 12 (Typ.) cm Hz / W D* 400 1150 925 50 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA nm nm 140 V ±50 Degrees Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 65