VTP Process Photodiodes VTP7840 PACKAGE DIMENSIONS inch (mm) CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 85°C -40°C to 85°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP7840 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage VOC Temperature Coefficient Dark Current H = 0, VR = 10 V RSH Shunt Resistance H = 0, V = 10 mV CJ Junction Capacitance H = 0, V = 3 V SR Sensitivity @ Peak TC ISC VOC TC VOC ID λrange Spectral Application Range λp Spectral Response - Peak VBR Forward Voltage θ1/2 Angular Resp. - 50% Resp. Pt. NEP D* 50 Typ. Max. 70 µA .20 %/°C H = 100 fc, 2850 K 325 mV 2850 K -2.0 20 0.25 GΩ 40 .55 1150 nm 925 nm 1.0 V ±48 Degrees -14 (Typ.) Noise Equivalent Power 5.3 x 10 Specific Detectivity 5.1 x 10 12 (Typ.) PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA pF A/W 725 @ 10 mA nA W ⁄ Hz cm Hz / W Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 60