IRF IRG4PH50S

PD -91712A
IRG4PH50S
INSULATED GATE BIPOLAR TRANSISTOR
Standard Speed IGBT
Features
C
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
VCES =1200V
VCE(on) typ. = 1.47V
G
@VGE = 15V, IC = 33A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche EnergyS
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
1200
57
33
114
114
±20
270
200
80
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6.0 (0.21)
0.64
–––
40
–––
Units
°C/W
g (oz)
1
7/7/2000
IRG4PH50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
1200 —
Emitter-to-Collector Breakdown Voltage T 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
1.22
— 1.47
Collector-to-Emitter Saturation Voltage
— 1.75
VCE(ON)
— 1.55
VGE(th)
Gate Threshold Voltage
3.0
—
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
—
-11
gfe
Forward Transconductance U
27
40
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0 A
—
V/°C VGE = 0V, IC = 2.0 mA
1.7
IC = 33A
VGE = 15V
—
IC = 57A
See Fig.2, 5
V
—
IC = 33A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 33A
250
VGE = 0V, VCE = 1200V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 1200V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Q gc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
167
25
55
32
29
845
425
1.80
19.6
21.4
32
30
1170
1000
37
13
3600
160
30
Max. Units
Conditions
251
IC = 33A
38
nC VCC = 400V
See Fig. 8
83
VGE = 15V
—
—
TJ = 25°C
ns
1268
IC = 33A, VCC = 960V
638
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
44
—
TJ = 150°C,
—
IC = 33A, VCC = 960V
ns
—
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 10,11,14
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PH50S
For both:
L oad C urre nt (A )
Triangular wave:
Duty cycle: 50%
T J = 125°C
T sink = 90°C
Gate drive as specified
Power Dissipation = 40W
60
40
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
20
Ideal diodes
A
0
0.1
1
10
f, F reque ncy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
TJ = 25 °C
100
100
TJ = 150 °C
10
V
= 15V
80µs PULSE WIDTH
GE
1
0.0
1.0
2.0
3.0
4.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
1000
1000
5.0
TJ = 150 °C
TJ = 25 °C
10
V
= 50V
5µs PULSE WIDTH
CC
1
5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PH50S
60
2.5
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
50
40
30
20
10
0
25
50
75
100
125
150
I C = 66 A
2.0
I C = 33 A
1.5
I C =16.5 A
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH50S
C, Capacitance (pF)
6000
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
5000
4000
Coes
3000
2000
Cres
1000
20
VGE , Gate-to-Emitter Voltage (V)
7000
0
15
10
5
10
100
0
VCE , Collector-to-Emitter Voltage (V)
1000
Total Switching Losses (mJ)
Total Switching Losses (mJ)
23.0
22.0
21.0
10
20
30
40
, Gate
Resistance
RRGG, Gate
Resistance
( Ω(Ohm)
)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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50
75
100
125
150
175
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 960V
V GE = 15V
TJ = 25 °C
I C = 33A
0
25
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
24.0
VCC = 400V
I C = 33A
0
1
25.0
50
5Ω
RG = 15Ω
5Ohm
VGE = 15V
VCC = 960V
IC = 66 A
100
IC = 33 A
IC = 16.5 A
10
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PH50S
RG
TJ
VCC
100
VGE
1000
= 55Ohm
Ω
= 150 ° C
= 960V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
120
VGE = 20V
T J = 125 oC
100
80
60
40
10
20
SAFE OPERATING AREA
0
1
0
10
20
30
40
50
60
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
70
1
10
100
1000
10000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
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IRG4PH50S
L
D .U .T.
VC *
50V
RL =
1 00 0V
480µF
960V
0-960V
Q
960V
4X [email protected]°C
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching
Loss Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = ----V
R
S
Fig. 14b - Switching Loss
Waveforms
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7
IRG4PH50S
Case Outline and Dimensions — TO-247AC
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
0 .2 5 (.0 1 0 ) M D B M
1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
-B-
-A5 .5 0 (.2 1 7)
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )
2X
1
2
-D-
5 .3 0 ( .2 0 9 )
4 .7 0 ( .1 8 5 )
2 .5 0 (.0 8 9 )
1 .5 0 (.0 5 9 )
4
5 .5 0 (.2 17 )
4 .5 0 (.1 77 )
LEAD
1234-
3
-C-
*
14 .80 (.583 )
14 .20 (.559 )
2 .4 0 ( .0 9 4 )
2 .0 0 ( .0 7 9 )
2X
5.45 (.2 15 )
2X
4.30 (.1 70)
3.70 (.1 45)
3X
1 .4 0 (.0 5 6 )
1 .0 0 (.0 3 9 )
0 .2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
*
C A S
0 .8 0 (.0 3 1 )
3X 0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )
A S S IG N M E N T S
GATE
COLLE CTO R
E M IT T E R
COLLE CTO R
L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n s ion s in M illim e te rs a n d (In c h es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
8
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