MOTOROLA Order this document by MMDFS2P102/D SEMICONDUCTOR TECHNICAL DATA FETKY MMDFS2P102 MOSFET and Schottky Rectifier The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. • • • • • • P–Channel Power MOSFET with Schottky Rectifier 20 Volts RDS(on) = 0.16 W VF = 0.39 Volts HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive — Can be Driven by Logic ICs CASE 751–05, Style 18 (SO– 8) Mounting Information for SO–8 Package Provided IDSS Specified at Elevated Temperature Applications Information Provided A A 1 8 2 7 C C 6 S 3 G 4 D D 5 TOP VIEW MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (1) Symbol Value Unit 20 Vdc Drain–to–Gate Voltage (RGS = 1.0 MW) VDSS VDGR 20 Gate–to–Source Voltage — Continuous VGS "20 Vdc Drain Current (3) — Continuous @ TA = 25°C — Continuous @ TA = 100°C — Single Pulse (tp 10 ms) ID ID IDM 3.3 2.1 20 Adc Total Power Dissipation @ TA = 25°C (2) PD 2.0 Watts EAS 324 mJ VRRM VR 20 Volts Rating Drain–to–Source Voltage v Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W Vdc Apk SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (3) (Rated VR) TA = 100°C IO 1.0 Amps Peak Repetitive Forward Current (3) (Rated VR, Square Wave, 20 kHz) TA = 105°C Ifrm 2.0 Amps Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Ifsm 20 Amps DEVICE MARKING 2P102 ORDERING INFORMATION Device MMDFS2P102R2 Reel Size Tape Width Quantity 13″ 12 mm embossed tape 2500 units (1) Negative sign for P–channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. (3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. FETKY is a trademark of International Rectifier. TMOS Motorola Motorola, Inc. 1997 Product Preview Data 1 MMDFS2P102 THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET Thermal Resistance — Junction–to–Ambient (1) — MOSFET RqJA 167 Thermal Resistance — Junction–to–Ambient (2) — MOSFET RqJA 100 Thermal Resistance — Junction–to–Ambient (3) — MOSFET RqJA 62.5 Thermal Resistance — Junction–to–Ambient (1) — Schottky RqJA 204 Thermal Resistance — Junction–to–Ambient (2) — Schottky RqJA 122 Thermal Resistance — Junction–to–Ambient (3) — Schottky Operating and Storage Temperature Range RqJA 83 Tj, Tstg – 55 to 150 °C/W (1) Mounted with minimum recommended pad size, PC Board FR4. (2) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State. (3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 2 Motorola TMOS Product Preview Data MMDFS2P102 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (1) Characteristic Symbol Min Typ Max Unit 20 — — 25 — — Vdc mV/°C — — — — 1.0 10 — — 100 1.0 — 1.5 4.0 2.0 — — — 0.118 0.152 0.160 0.180 gFS 2.0 3.0 — mhos Ciss — 420 588 pF Coss — 290 406 Crss — 116 232 td(on) — 19 38 tr — 66 132 td(off) — 25 50 tf — 37 74 QT — 15 20 Q1 — 1.2 — Q2 — 5.0 — Q3 — 4.0 — — 1.5 2.1 trr — 38 — ta — 17 — tb — 21 — QRR — 0.034 — OFF CHARACTERISTICS Drain–Source Voltage (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS µAdc nAdc ON CHARACTERISTICS (2) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) VGS(th) Static Drain–Source Resistance (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 4.5 Vdc, ID = 2.5 Adc) RDS(on) Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) Vdc mV/°C Ohms DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 16 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (3) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDS = 10 Vdc, Vd ID = 2.0 2 0 Adc, Ad 4 5 Vdc, Vdc VGS = 4.5 RG = 6.0 Ω)) Fall Time Gate Charge ((VDS = 16 Vdc, Vd , ID = 2.0 2 0 Adc, Ad , VGS = 10 Vdc) DRAIN SOURCE DIODE CHARACTERISTICS Forward On–Voltage (2) (IS = 2.0 Adc, VGS = 0 Vdc) Reverse Recovery Time ((IS = 2.0 2 0 Adc, Ad , VDD = 15 V, V, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge VSD ns nC V ns µC SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Maximum Instantaneous Forward Voltage (2) VF IF = 1.0 10A IF = 2.0 A Maximum Instantaneous Reverse Current (2) IR VR = 20 V Maximum Voltage Rate of Change VR = 20 V dV/dt TJ = 25°C TJ = 125°C 0.47 0.58 0.39 0.53 TJ = 25°C TJ = 125°C 0.05 10 10,000 Volts mA V/ms (1) Negative sign for P–channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2.0%. (3) Switching characteristics are independent of operating temperature. Motorola TMOS Product Preview Data 3 MMDFS2P102 TYPICAL FET ELECTRICAL CHARACTERISTICS 4.0 4.0 4.5 V 3.8 V TJ = 25°C VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 10 V 3.0 2.0 3.1 V 1.0 3.0 2.0 25°C 1.0 TJ = – 55°C 100°C VGS = 2.4 V 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.5 1.0 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.4 0.3 0.2 0.1 0 4.0 6.0 8.0 10 R DS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) R DS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) TJ = 25°C ID = 1.0 A 2.0 TJ = 25°C VGS = 4.5 V 0.16 0.12 10 V 0.08 0.04 0 1.0 0.5 2.0 2.5 3.0 3.5 4.0 Figure 4. On–Resistance versus Drain Current and Gate Voltage 100 1.6 VGS = 0 V VGS = 10 V ID = 2.0 A IDSS , LEAKAGE (nA) R DS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 1.5 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–To–Source Voltage 1.2 1.0 TJ = 125°C 10 100°C 0.8 0.6 –50 1.0 –25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On–Resistance Variation with Temperature 4 3.5 0.20 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1.4 3.0 Figure 2. Transfer Characteristics 0.6 0 2.5 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 0.5 2.0 150 0 5.0 10 15 20 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage Motorola TMOS Product Preview Data MMDFS2P102 TYPICAL FET ELECTRICAL CHARACTERISTICS VDS = 0 C, CAPACITANCE (pF) VGS = 0 Ciss 1000 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1200 TJ = 25°C 800 600 Ciss Crss 400 Coss 200 Crss 0 –10 – 5.0 5.0 0 VGS 10 15 20 18 12 QT 16 10 14 12 8.0 10 VGS 6.0 8.0 Q1 4.0 Q2 ID = 2.0 A TJ = 25°C 2.0 4.0 2.0 Q3 VDS 0 4.0 0 6.0 8.0 0 16 12 QG, TOTAL GATE CHARGE (nC) VDS Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 2.0 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 1000 100 td(off) tf tr td(on) 10 VGS = 0 V TJ = 25°C 1.6 1.2 0.8 0.4 0 10 1.0 100 0.5 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 10 10 ms 1.0 dc 0.1 1.1 1.3 1.5 350 Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10 s max. VGS = 20 V SINGLE PULSE TC = 25°C 0.9 Figure 10. Diode Forward Voltage versus Current EAS , SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (AMPS) 100 0.7 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) 1.0 ms 100 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT ID = 6.0 A 300 250 200 150 100 50 0 0.01 0.1 1.0 10 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area Motorola TMOS Product Preview Data 100 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 5 MMDFS2P102 TYPICAL FET ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) CHIP JUNCTION 0.001 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F SINGLE PULSE AMBIENT 0.0001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) 1.0E+00 1.0E+02 1.0E+01 1.0E+03 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform 10 TJ = 125°C 1.0 85°C 25°C – 40°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage 6 1.0 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 10 TJ = 125°C 85°C 1.0 25°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 16. Maximum Forward Voltage Motorola TMOS Product Preview Data MMDFS2P102 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1E–1 IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) 1E–2 TJ = 125°C 1E–3 85°C 1E–4 1E–5 25°C 1E–6 1E–7 TJ = 125°C 1E–2 1E–3 1E–4 25°C 1E–5 1E–6 0 5.0 10 15 20 5.0 0 VR, REVERSE VOLTAGE (VOLTS) IO , AVERAGE FORWARD CURRENT (AMPS) C, CAPACITANCE (pF) TYPICAL CAPACITANCE AT 0 V = 170 pF 100 10 10 15 20 1.6 dc FREQ = 20 kHz 1.4 1.2 SQUARE WAVE 1.0 Ipk/Io = p 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 19. Typical Capacitance PFO , AVERAGE POWER DISSIPATION (WATTS) 20 Figure 18. Maximum Reverse Current 1000 5.0 15 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current 0 10 Figure 20. Current Derating 0.7 0.6 Ipk/Io = p 0.5 Ipk/Io = 5.0 0.4 0.3 dc SQUARE WAVE Ipk/Io = 10 Ipk/Io = 20 0.2 0.1 0 0 0.5 1.0 1.5 2.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation Motorola TMOS Product Preview Data 7 MMDFS2P102 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.02 0.0031 W CHIP JUNCTION 0.0014 F 0.01 0.01 0.0154 W 0.1521 W 0.4575 W 0.3719 W 0.0082 F 0.1052 F 2.7041 F 158.64 F SINGLE PULSE AMBIENT 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 22. Schottky Thermal Response 8 Motorola TMOS Product Preview Data MMDFS2P102 TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin CO – Vout LOAD – Buck Regulator LO + + Vin CO – Vout LOAD – Synchronous Buck Regulator STEP UP SWITCHING REGULATORS L1 + + Vin CO Vout LOAD Q1 – – Boost Regulator + + Vin CO – Vout LOAD – Buck–Boost Regulator Motorola TMOS Product Preview Data 9 MMDFS2P102 TYPICAL APPLICATIONS MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 Q2 LO D2 BATT #1 + D1 Vin CO – Q3 D3 BATT #2 Li–lon BATTERY PACK APPLICATIONS Battery Pack PACK + Li–Ion BATTERY CELLS SMART IC DISCHARGE Q1 CHARGE Q2 PACK – SCHOTTKY 10 SCHOTTKY • Applicable in battery packs which require a high current level. • During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. • During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. • Under normal operation, both transistors are on. Motorola TMOS Product Preview Data MMDFS2P102 SO–8 FOOTPRINT 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 8 5 –B– 1 4X P 0.25 (0.010) 4 M B M G R X 45 _ F C –T– 8X K D 0.25 (0.010) M T B SEATING PLANE S A M_ S J DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.189 0.196 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.007 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 CASE 751–05 SO– 08 Motorola TMOS Product Preview Data 11 MMDFS2P102 Motorola reserves the right to make changes without further notice to any products herein. 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