PHILIPS PHB83N03LT

PHP83N03LT; PHB83N03LT;
PHE83N03LT
N-channel TrenchMOS transistor
Rev. 01 — 23 January 2001
Product specification
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP83N03LT in a SOT78 (TO-220AB)
PHB83N03LT in a SOT404 (D2-PAK)
PHE83N03LT in a SOT226 (I2-PAK).
2. Features
■ Low on-state resistance
■ Fast switching.
3. Applications
■ High frequency computer motherboard DC to DC converters
c
c
4. Pinning information
Table 1:
Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base,
connected to
drain (d)
Simplified outline
Symbol
mb
mb
[1]
d
g
1 2 3
2
1
3
MBK112
MBK116
MBK106
1 2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Royal Phillips Electronics.
SOT226 (I2-PAK)
MBB076
s
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
VDS
drain-source voltage (DC)
Conditions
Typ
Max
Unit
Tj = 25 to 175 °C
−
25
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V
−
75
A
Ptot
total power dissipation
Tmb = 25 °C
−
115
W
Tj
junction temperature
−
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
6.5
9
mΩ
VGS = 5 V; ID = 25 A; Tj = 25 °C
10
12
mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj = 25 to 175 °C
−
25
V
VDGR
drain-gate voltage (DC)
Tj = 25 to 175 °C; RGS = 20 kΩ
−
25
V
VGS
gate-source voltage (DC)
−
±15
V
VGSM
gate-source voltage
tp ≤ 50 µs; pulsed;
duty cycle 25%; Tj ≤ 150 °C
−
±20
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
−
75
A
Tmb = 100 °C; VGS = 5 V; Figure 2
−
61
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
−
240
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
−
115
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
−
75
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
−
240
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C
−
120
mJ
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD = 15 V; RGS = 50 Ω; VGS = 5 V;
starting Tj = 25 °C
−
75
A
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
2 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03ac97
120
03ad95
120
Ider
(%)
100
Pder 110
(%) 100
90
80
80
70
60
60
50
40
40
30
20
20
10
0
0
20
40
60
80
100
120 140 160 180
Tmb (oC)
0
0
P tot
P der = ---------------------- × 100%
P
°
60
120
Tmb (ºC) 180
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ad86
103
ID
(A)
RDSon = VDS / ID
tp = 10 µs
102
100 µs
1 ms
D.C.
10
δ=
P
10 ms
tp
T
100 ms
t
tp
T
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
3 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Rth(j-mb)
thermal resistance from junction to mounting
base
Rth(j-a)
thermal resistance from junction to ambient
Conditions
Value Unit
Figure 4
1.3
K/W
vertical in still air; SOT78 package
60
K/W
vertical in still air; SOT226 package
65
K/W
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT226 packages
50
K/W
7.1 Transient thermal impedance
03ad85
10
Zth(j-sp)
(K/W)
1
δ = 0.5
0.2
10-1
0.1
0.05
0.02
δ=
P
tp
T
10-2
single pulse
t
tp
T
10-3
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
4 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
25
−
−
V
Tj = −55 °C
22
−
−
V
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 0.25 mA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
1
1.5
2
V
Tj = 175 °C
0.5
−
−
V
Tj = −55 °C
−
−
2.3
V
Tj = 25 °C
−
0.05
10
µA
Tj = 175 °C
−
−
500
µA
−
10
100
nA
Tj = 25 °C
−
10
12
mΩ
Tj = 175 °C
−
17
20.5
mΩ
−
6.5
9
mΩ
VDS = 25 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 5 V; ID = 25 A; Figure 7 and 8
VGS = 10 V; ID = 25 A
Tj = 25 °C
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; ID = 30 A; Figure 11
−
55
−
S
Qg(tot)
total gate charge
ID = 30 A; VDD = 15 V; VGS = 5 V; Figure 14
−
33
−
nC
Qgs
gate-source charge
−
7
−
nC
Qgd
gate-drain (Miller) charge
−
12.5
−
nC
Ciss
input capacitance
−
1660 −
pF
Coss
output capacitance
−
590
−
pF
Crss
reverse transfer capacitance
−
380
−
pF
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
tf
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
VDD = 15 V; ID = 1 A; VGS = 10 V; RG = 6 Ω;
resistive load
−
9
20
ns
−
14
30
ns
turn-off delay time
−
75
95
ns
turn-off fall time
−
60
80
ns
−
0.9
1.2
V
−
0.95
−
V
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13
IS = 40 A; VGS = 0 V
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
5 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03ad87
03ad89
75
75
10 V 4.5 V
ID
(A)
60
3.5 V
ID
(A)
60
Tj = 25 ºC
45
VDS > ID x RDSon
45
3V
30
30
15
15
175 ºC
Tj = 25 ºC
VGS = 2.5 V
0
0
0
0.4
0.8
1.2
1.6 VDS (V) 2
Tj = 25 °C
0
1
2
3
VGS (V) 4
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
03ad57
03ad88
0.06
RDSon
(Ω)
0.05
2.5 V
VGS = 3 V
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
2
Tj = 25 ºC
a
1.6
0.04
1.2
3.5 V
0.03
0.8
0.02
0.4
4.5 V
0.01
10 V
0
0
0
15
30
45
60 ID (A) 75
Tj = 25 °C
-60
60
120 Tj (ºC) 180
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
0
Rev. 01 — 23 January 2001
6 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03aa33
2.5
V
GS(th)
(V)
ID
(A) 10-2
max
2
typ
10-3
1.5
min
1
10-4
0.5
10-5
min
typ
max
10-6
0
-60
-20
20
60
100
0
140
180
Tj (oC)
0.5
1
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03ad90
90
gfs
(S)
75
03aa36
10-1
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ad92
104
Ciss,
VDS > ID x RDSon
Coss,
Crss
(pF)
Ciss
60
Tj = 25 ºC
103
45
Coss
175 ºC
30
Crss
15
102
0
0
15
30
45
10-1
60 ID (A) 75
Tj = 25 °C and 175 °C; VDS > ID × RDSon
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
1
Rev. 01 — 23 January 2001
7 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03ad91
03ad93
75
10
IS
(A)
60
VGS = 0 V
VGS ID = 30 A
(V) Tj = 25 ºC
8
45
6
30
4
175 ºC
15
VDD = 5 V 10 V 15 V
Tj = 25 ºC
2
0
0
0
0.3
0.6
0.9 VSD (V) 1.2
Tj = 25 °C and 175 °C; VGS = 0 V
0
60 QG (nC) 80
40
ID = 30 A; VDD = 5 V, 10 V and 15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
20
Rev. 01 — 23 January 2001
8 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
P
q
mounting
base
D1
D
L1
L2(1)
Q
b1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1
L2
max.
P
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
EIAJ
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
00-09-07
Fig 15. SOT78 (TO-220AB).
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
9 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.40
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT404
Fig 16. SOT404 (D2-PAK)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
10 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
A
A1
E
D1
mounting
base
D
L1
L2
Q
b1
L
1
2
3
b
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1
L2
max
Q
mm
4.5
4.1
1.40
1.27
0.9
0.7
1.3
1.0
0.7
0.4
9.65
8.65
1.5
1.1
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT226
REFERENCES
IEC
JEDEC
EIAJ
low-profile
3-lead TO-220AB
EUROPEAN
PROJECTION
ISSUE DATE
99-05-27
99-09-13
Fig 17. SOT226 (I2-PAK)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
11 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
10. Revision history
Table 6:
Revision history
Rev Date
01
CPCN
20010123
-
Description
Product specification; initial version
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
12 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
11. Data sheet status
Datasheet status
Product status
Definition [1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2001 All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
13 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
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Internet: http://www.semiconductors.philips.com
(SCA71)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
14 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
© Philips Electronics N.V. 2001.
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Date of release: 23 January 2001
Document order number: 9397 750 07815