INFINEON CGY21

CGY 21
GaAs MMIC
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CGY 21
Two-stage monolithic microwave IC (MMIC amplifier)
All gold metallization
Chip fully passivated
Operating voltage range: 3 to 6 V
50 Ω input/output; RLIN RLOUT > 10 dB
Gain: 21 dB at 500 MHz
Low noise figure: 3.9 dB at 500 MHz
Bandwidth: 2 GHz
Hermetically sealed package
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Ordering Code Circuit Diagram (Pin Configuration)
CGY 21 Q68000-A5953
TO-12
1
2
3
4
1)
RF output, VS
Interstage, VS
RF input
RF and DC
ground, case
For detailed information see chapter Package Outlines.
Semiconductor Group
Package1)
1
CGY 21
Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage, TC ≤ 80 ˚C
VS
6
V
Total power dissipation, TC ≤ 50 ˚C
Ptot
2
W
Channel temperature
Tch
150
˚C
Storage temperature range
Tstg
– 55 … + 150
RthchC
50
Thermal Resistance
Channel - case
K/W
Note: Exceeding any of the maximum ratings may cause permanent damage to the device.
Appropriate handling procedures are required to protect the electrostatic sensitive IC
against degradation due to excess voltage or excess current spikes. Excellent ground
connection of lead 4 and the package (e. g. soldered on microstripline laminate) is
required to achieve guaranteed RF performance and stable operation conditions and
provides adequate heat sink. Low parasitic capacitance of the bias network to port 2
gives optimum gain and flatness. Input and output connections must be DC isolated by
coupling capacitors.
Semiconductor Group
2
CGY 21
Electrical Characteristics
at TA = 25 ˚C, VS = 4.5 V, RS = RL = 50 Ω, unless otherwise specified,
(for application circuit see next page).
Parameter
Symbol
Values
Unit
min.
typ.
max.
Operating current
Iop
–
160
200
mA
Power gain
f = 100 MHz to 900 MHz
G
19
21
–
dB
Gain flatness
f = 100 MHz to 900 MHz
∆G
–
1.5
2
Noise figure
f = 100 MHz to 900 MHz
F
–
3.9
5.5
Input return loss
f = 100 MHz to 900 MHz
RLIN
–
12
9.5
Output return loss
f = 100 MHz to 900 MHz
RLOUT
–
12
9.5
Third order intercept point
two-tone intermodulation test
f1= 806 MHz, f2= 810 MHz,
Po = 10 dBm (both carriers)
IP3
31
32.5
–
1 dB gain compression
f = 100 MHz to 900 MHz
P1dB
–
19
–
Semiconductor Group
3
dBm
CGY 21
Application Circuit
f = 100 MHz to 900 MHz
Legend of components
C1, C2, C3
1 nF chip capacitors
L1, L2
1 µH inductance (B 78108 - T 1102K)
D
6 V2 Zener diode (BZW 22C6V2)
Semiconductor Group
4
CGY 21
Total power dissipation Ptot = f (TC)
Max. supply voltage VSmax = f (TC)
Operating current Iop = f (VS)
Semiconductor Group
5
CGY 21
Power gain G = f (f)
VS = 4.5 V, RS = RL = 50 Ω
Power gain G = f (VS)
RS = RL = 50 Ω
Power gain G = f (Pout)
VS = 4.5 V, RS = RL = 50 Ω
f = 0.8 GHz
Semiconductor Group
6
CGY 21
Third order intercept point IP3 = f (VS)
f = 800 MHz, RS = RL = 50 Ω
Noise figure F = f (VS)
RS = RL = 50 Ω
Noise figure F = f (f)
VS = 4.5 V, RS = RL = 50 Ω
Semiconductor Group
7
CGY 21
S Parameters
f
S11
GHz
MAG
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
MAG
ANG
49
55
34
17
0
– 15
– 28
– 39
13.82
13.63
13.03
12.1
10.93
9.48
7.91
6.29
– 10
– 34
– 58
– 81
– 104
– 127
– 149
– 171
0.012
0.012
0.012
0.011
0.011
0.01
0.009
0.008
– 2
– 7
– 13
– 19
– 24
– 29
– 31
– 32
0.11
0.13
0.15
0.19
0.24
0.29
0.33
0.36
3
11
18
20
20
16
12
5
VS = 4.5 V, Z0 = 50 Ω
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.02
0.08
0.14
0.18
0.23
0.27
0.28
0.25
S11 = f (f)
VS = 4.5 V, Z0 = 50 Ω
Semiconductor Group
S12 = f (f)
VS = 4.5 V, Z0 = 50 Ω
8
CGY 21
S Parameters (continued)
S21 = f (f)
VS = 4.5 V, Z0 = 50 Ω
Semiconductor Group
S22 = f (f)
VS = 4.5 V, Z0 = 50 Ω
9