BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Preliminary data • Multifunctional casc. 50 Ω block (LNA / MIX) 4 • Unconditionally stable • Gain |S21|2 = 18.5 dB at 1.8 GHz (appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (appl.2) 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA) 1 • Noise figure NF = 2.2 dB at 1.8 GHz VPS05605 • Reverse isolation >28 dB (appl.1) >35 dB (appl.2) Circuit Diagram • typical device voltage VD = 2 V to 5 V 6 Tape loading orientation +V 3 OUTA 1 IN OUTB 4 2, 5 ESD: Electrostatic discharge sensitive device, observe handling precaution! GND EHA07371 PIN Configuration Type Marking Ordering Code Package 1, Out B 2, GND 3, Out A BGA 425 BMs SOT-343 4, IN 5, GND 6, +V Q62702-G0058 Maximum Ratings Parameter Symbol Value Unit Device current ID 25 mA Device voltage VD,+V Total power dissipation, T S ≤ tbd °C Ptot 150 mW RF input power PRFin -10 dBm Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 Storage temperature T stg -65 ...+150 RthJS ≤ tbd 6 V Thermal Resistance Junction - soldering point 1) K/W 1) TS is measured on the ground lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Jul-14-1998 1998-11-01 BGA 425 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 8.5 9.5 10.5 AC characteristics VD = 3V, Z o = 50Ω, Testfixture Appl.1 Device current ID Insertion power gain f = 0.1 GHz f = 1 GHz |S21| 2 f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz dB - 27 22 - - 18.5 28 - - 1.9 2 - 2.2 IP 3out - +7 - dBm RL in - >13 - dB RL out - >7 - S12 NF Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Semiconductor Group Semiconductor Group mA 22 Jul-14-1998 1998-11-01 BGA 425 Typical configuration Application 1 - 3 (LNA) Application 4 (Mix) Appl.1 Appl.2 100 pF 2.2 pF RF OUT BGA 425 BGA 425 100 pF 100 pF 100 pF RF IN RF OUT RF IN 10 nF 100 nH 100 pF +3 V 10 nF EHA07372 100 pF +3 V EHA07373 Appl.3 Appl.4 100 pF 100 pF 1 nF RF OUT 47 pF 22 nH LO 33 Ω BGA 425 BGA 425 47 pF 100 pF 100 pF RF IN 10 nF 100 pF IF RF 180 nH +3 V EHA07374 10 nF 100 pF +V EHA07375 Note: 1) Large-value capacitors should be connected from pin 6 to ground right at the device to provide a low impedance path! (appl. 1) 2) The use of plated through holes right at pin 2 and 5 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground! 3) For more information please see application note 028 and 030. Semiconductor Group Semiconductor Group 33 Jul-14-1998 1998-11-01 BGA 425 Electrical characteristics at T A = 25 °C, unless otherwise specified. VD = 3 V Application 1 to 4 Applic. Insertion Gain Noise Figure Reverse Isol. Return Loss |S21 |2 (dB) NF (dB) Input RLin (dB) Output RLout (dB) Frequ. (GHz) Frequ. (GHz) Frequ. (GHz) 0.1 1 1.8 0.1 1 1.8 0.1 1 1.8 0.1 1 1.8 0.1 1 1.8 1 (LNA) 27 22 18.5 1.9 2 2.2 46 32 28 19 19 18 10 12 13 2 (LNA) 10 22 22 - 1.9 2.1 35 35 37 13 15 8 5 10 11 *) 3 (LNA) 24 20 16 1.9 2 30 26 8 10 14 15 17 11 4 (MIX) e.g.: RF = 900 MHz, IF = 100 MHz, VD = 3 V Conversion gain: 20 dB Intercept point output: 0 dBm Noise figure: < 5 dB LO-power: +3 dBm S12 (dB) 2.2 34 Frequ. (GHz) Return Loss Frequ. (GHz) *) 2.2 pF by-pass capacitance and 100 nH bias-inductance Semiconductor Group Semiconductor Group 44 Jul-14-1998 1998-11-01 BGA 425 For linear simulation please use on-wafer measurement data of our T501 chip an add resistive and capacitive elements, parasitics and package equivalent circuit. S-Parameters at T A = 25 °C (On-wafer measurement data T501) f S11 GHz MAG S21 ANG MAG T1, VCE = 1.7 V, IC = 4.7 mA 0.1 0.7996 -8 11.8466 0.3 0.8223 -15.5 11.9814 0.5 0.8294 -26.3 11.9702 0.7 0.8162 -34.4 11.4624 0.9 0.81 -44.5 11.1452 1.1 0.793 -52.8 10.739 1.3 0.7884 -61.8 10.3219 1.5 0.7651 -69.1 9.7368 1.7 0.7534 -75.9 9.3137 1.9 0.74 -81.8 8.8247 2.1 0.7391 -88.4 8.4426 2.3 0.7335 -96 8.089 2.5 0.7186 -98.4 7.6674 2.7 0.7193 -103.1 7.3034 2.9 0.702 -108 6.7988 3.1 0.6897 -112.6 6.4921 S12 S22 ANG MAG ANG MAG ANG 172.4 169 162.6 156.8 149.5 144.6 138.9 134 130.2 126 121.9 118 115.5 113.2 109.9 107.4 0.0111 0.0126 0.0163 0.019 0.0208 0.0281 0.0332 0.0373 0.0383 0.0404 0.0417 0.0451 0.0465 0.049 0.0492 0.0501 118 90.9 75.9 72.4 64.7 62.4 58.2 54 49.3 45.6 44.1 41.6 40.8 40 37 36.7 0.9942 0.9853 0.9675 0.9529 0.9286 0.9094 0.8842 0.8523 0.8221 0.7939 0.7721 0.7476 0.7339 0.716 0.6885 0.6743 0 -5.7 -9.6 -13.5 -17.2 -20.4 -23.5 -25.9 -28.2 -30.2 -32.7 -34.5 -35.7 -37.3 -38.6 -39.7 172.1 169 162.7 157 149.7 144.8 139.2 134.3 130.5 126.3 122.1 118.2 115.5 113.4 110 107.6 0.0154 0.01 0.0129 0.0183 0.0227 0.0261 0.0307 0.0325 0.0361 0.0374 0.04 0.0416 0.0463 0.043 0.0468 0.0481 129.2 80.7 76.3 70.8 70.7 64.2 60.7 54 48 49.2 44.3 39.7 40.4 38.8 35.7 34.2 0.985 0.9906 0.9728 0.9557 0.9375 0.9147 0.8916 0.8595 0.8322 0.8019 0.7857 0.7625 0.7467 0.7273 0.7077 0.689 -0.5 -5.6 -0.1 -12.7 -16 -19 -22.4 -24.5 -26.6 -28.6 -30.9 -32.9 -33.7 -35.8 -36.7 -37.6 T2, VCE = 2.2 V, IC = 4.7 mA 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0.8144 0.8094 0.8251 0.8171 0.7957 0.7952 0.7953 0.767 0.7618 0.7384 0.739 0.7285 0.718 0.7294 0.6955 0.6868 Semiconductor Group Semiconductor Group -8.3 -15.3 -25.8 -34.4 -44.9 -52.5 -61.9 -68.6 -75.5 -81.3 -88.7 -95.8 -97.9 -102.9 -107.8 -111.9 11.9941 12.1389 12.1376 11.6229 11.3048 10.8874 10.4735 9.8866 9.4501 8.9757 8.5788 8.2231 7.7991 7.429 6.9444 6.6064 55 Jul-14-1998 1998-11-01 BGA 425 Spice model +V BGA 425-chip including parasitics 16 11 R2 OUTB R5 T2 R1 RF IN R3 C’-E’Diode 13 C1 14 C P3 T1 C P1 C P4 C P5 R4 C P2 12, 15 GND Semiconductor Group Semiconductor Group EHA07376 66 OUTA T1 T2 R1 R2 R3 R4 R5 RP1 C1 CP1 CP2 CP3 CP4 T501 T501 14.5kΩ 280Ω 2.4kΩ 170Ω 22Ω 1kΩ 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF 0.1pF CP5 C’-E’-diode T1 Jul-14-1998 1998-11-01 BGA 425 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 aA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 Ω IRB = 0.21215 mA RBM = 1.3491 Ω RE = 1.9289 RC = 0.12691 Ω CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 - TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 Ω L BI1 = L BI2 = L BO1 = L BO2 = L EI = L EO = L CI1 = L CI2 = L CO1 = L CO2 = C BE1 = C BE2 = C CE1 = C CE2 = C 11 = C 22 = C 12 = C 21 = 0.4 0.7 0.3 0.3 0.3 0.1 0.4 0.4 0.3 0.3 200 200 200 200 5 5 50 50 nH nH nH nH nH nH nH nH nH nH fF fF fF fF fF fF fF fF C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: C 12 C 21 L BO2 L BI2 RF IN L BO1 C 11 L BI1 +V C’-E’Diode C BE2 14 16 13 BGA 425 Chip 11 L CI2 L CO2 OUTA L CI1 C 22 L CO1 OUTB 12, 15 C BE1 C CE1 C CE2 L EI L EO GND EHA07377 Extracted on behalf of SIEMENS Small Signal Semiconductors by Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG Valid up to 3GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 77 Jul-14-1998 1998-11-01 BGA 425 Insertion power gain |S 21| 2 = f (f) Noise figure NF = f (f) VD, I D = parameter VD,ID = parameter 5.0 35 VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA dB 4.0 25 3.5 NF |S 21|2 dB 20 VD=5V, ID=17.5mA VD=3V, ID=9.5mA 3.0 2.5 15 2.0 1.5 10 1.0 5 0.5 0 -1 10 10 0 GHz 10 0.0 -1 10 1 f 10 0 GHz 10 1 f Intercept point at the output IP 3out = f (f) VD,ID = parameter 20 dBm IP3out 16 VD=5V, ID=17.5mA VD=4V, ID=13,3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA 14 12 10 8 6 4 2 0 -1 10 10 0 GHz 10 1 f Semiconductor Group Semiconductor Group 88 Jul-14-1998 1998-11-01