PROFET® BTS 442 D2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • CMOS diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection2) • Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ... 42 V 18 mΩ 21 A 70 A TO-220AB/5 5 5 5 1 Straight leads Standard 1 SMD Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. R bb Voltage Overvoltage Current Gate source protection limit protection + V bb 3 V Logic 2 Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) 2) Load GND No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group 1 04.96 BTS 442 D2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb VLoad dump3) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 167 A °C 2.1 2.0 J kV -0.5 ... +6 ±5.0 ±5.0 V mA ≤ 0.75 ≤ 75 ≤ tbd K/W EAS VESD VIN IIN IST 63 80 Unit V V W see internal circuit diagrams page 6... Thermal resistance 3) 4) chip - case: junction - ambient (free air): SMD version, device on pcb4): RthJC RthJA VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 442 D2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 5 A Tj=25 °C: RON Tj=150 °C: IL(ISO) Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Operating Parameters Tj =-40...+150°C: Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Undervoltage restart of charge pump Tj =-40...+150°C: see diagram page 12 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150°C: Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis ) 6 Tj =-40°C: Overvoltage protection Ibb=40 mA Tj =25...+150°C: Tj=-40...+25°C: Standby current (pin 3) VIN=0, IST=0, Tj=150°C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)7), VIN=5 V 5) 6) 7) -- 15 18 mΩ 17 28 21 35 -- A -- -- 1 mA ton toff 100 10 --- 350 130 µs dV /dton 0.2 -- 2 V/µs -dV/dtoff 0.4 -- 5 V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 4.5 2.4 --- ---6.5 42 4.5 4.5 7.5 V V V V ∆Vbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) --0.2 -67 12 18 6 52 ---- V V V V 25 60 -- µA IL(off) 42 42 -60 63 ---- IGND -- 1.1 -- mA IL(GNDhigh) Ibb(off) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 µA BTS 442 D2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions Initial peak short circuit current limit (pin 3 to 5)8), IL(SCp) ( max 400 µs if VON > VON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) Values min typ max --45 -95 -- 140 --- A 30 70 -- A 80 -- 400 µs VON(CL) -- 58 -- V VON(SC) Tjt ∆Tjt EAS ELoad12 ELoad24 -150 --- 8.3 -10 -- ---2.1 1.7 1.2 V °C K J --- -120 32 -- V Ω 2 2 --- 1900 1500 mA min value valid only, if input "low" time exceeds 30 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) 8) Unit -Vbb Rbb Tj=-40 °C: IL (OL) Tj=25..150°C: Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. VON(CL) 2 ), see diagram page 8 EAS= 1/2 * L * IL * ( VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9) Semiconductor Group 4 BTS 442 D2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 -- 2.4 V VIN(T-) 1.0 -- -- V -1 0.5 -- -30 V µA at Tj = 25 °C, Vbb = 12 V unless otherwise specified Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Unit Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V ∆ VIN(T) IIN(off) On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 50 µA Status invalid after positive input slope Tj=-40 ... +150°C: (short circuit) Status invalid after positive input slope Tj=-40 ... +150°C: (open load) Status output (CMOS) Tj =-40...+150°C, IST= - 50 µA: Tj =-40...+150°C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150°C td(ST SC) 80 200 400 µs td(ST) 350 -- 1600 µs VST(high)12) VST(low) -IST +IST13) 4.4 ---- 5.1 ---- 6.5 0.4 0.25 1.6 V 11) If a ground resistor RGND is used, add the voltage drop across this resistor. VSt high ≈ Vbb during undervoltage shutdown 13) No current sink capability during undervoltage shutdown 12) Semiconductor Group 5 mA BTS 442 D2 Truth Table Input- Output level level 442 D2 442 E2 L H L H L H L H L H L H L H L H H H H L H L H H (L15)) L L L16) L16) L L H H H L H L H H (L15)) L L H H H H Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage Status 14) H L L H H L L L L L L L = "Low" Level H = "High" Level Terms Status output Ibb I IN 2 Vbb IN IL V VST IN OUT PROFET I ST V VLogic 3 4 ST VON 5 ST GND 1 bb R GND IGND VOUT ESDZD Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). GND Input circuit (ESD protection) Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high R IN I + V bb ESDZDI1 ZDI2 I I V ON GND OUT ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 14) 15) 16) Logic unit Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Semiconductor Group 6 Short circuit detection BTS 442 D2 Inductive and overvoltage output clamp GND disconnect + V bb V 3 Z V ON 2 IN Vbb PROFET OUT 5 OUT GND 4 VON clamped to 58 V typ. V V bb IN V ST GND 1 ST V GND Overvolt. and reverse batt. protection Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. + V bb V R IN Z GND disconnect with GND pull up R bb IN 3 Logic V R ST ST GND 2 OUT IN PROFET PROFET 4 Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection V GND V bb V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb VON OUT Open load detection Semiconductor Group 5 1 Signal GND Logic unit OUT ST R GND ON Vbb 7 BTS 442 D2 Vbb disconnect with charged inductive load Inductive Load switch-off energy dissipation E bb 3 high 2 IN PROFET 4 E AS Vbb OUT IN 5 PROFET ST = GND 1 V ELoad V bb ST OUT EL GND ER bb Energy dissipated in PROFET EAS = Ebb + EL - ER. 3 high 2 IN PROFET 4 2 ELoad < EL, EL = 1/2 * L * I L Vbb OUT 5 ST GND 1 V bb Semiconductor Group 8 BTS 442 D2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 442D2 442E2 Overtemperature protection Tj >150 °C, latch function17)18) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.17) (when first turned on after approx. 200 µs) D E X X X X X X Undervoltage shutdown with auto restart X X Overvoltage shutdown with auto restart X X X X Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor Status feedback for overtemperature X X -19) -19) open load X X undervoltage X - overvoltage X - short circuit to GND short to Vbb Status output type CMOS X X Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) 17) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short V to output may be detected by no-load-detection bb Semiconductor Group 9 BTS 442 D2 Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load IN IN t d(bb IN) V bb td(ST) ST *) V OUT V OUT A ST CMOS I L t IL(OL) A t in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT V OUT td(SC) I L I L t t td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ. Semiconductor Group 10 BTS 442 D2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature, Reset if (IN=low) and (Tj<Tjt) IN IN IL I L(SCp) I L(SCr) ST V ST OUT T J t t Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. *) ST goes high , when VIN=low and Tj<Tjt , Vbb - VOUT < 8.3 V typ. Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 3c: Short circuit while on: IN IN ST ST t d(ST) V OUT V OUT I IL L open **) t t **) current peak approx. 20 µs Semiconductor Group 11 BTS 442 D2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V] VON(CL) V on IN off t d(ST OL1) t ST d(ST OL2) V V off OUT V V bb(u rst) normal I open V normal L V bb(over) bb(o rst) bb(u cp) bb(under) on V bb t Vbb [V] td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ charge pump starts at Vbb(ucp) =6.5 V typ. Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN Vbb Vbb V bb(under) VON(CL) Vbb(over) V bb(o rst) Vbb(u cp) Vbb(u rst) V OUT V OUT ST ST CMOS t t Semiconductor Group 12 BTS 442 D2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 442 D2 TO-220AB/5, Option E3043 Ordering code Ordering code BTS 442 D2 E3043 Q67060-S6205-A2 Q67060-S6205-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS442D2 E3062A T&R: Semiconductor Group 13 Q67060-S6205-A4